K4A8G085WC-BIWE - 8Gb DDR4-3200 1Gx8 DRAM | Samsung
N.º de pieza: K4A8G085WC-BIWE ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $9.48 | $9,48 |
| 10 | $8.53 | $85,30 |
| 100 | $7.39 | $739,00 |
| 500 | $6.84 | $3.420,00 |
| 1.000 | $6.29 | $6.290,00 |
K4A8G085WC-BIWE Descripción general
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, succeeding DDR3, and offers higher speed, lower voltage (1.2V vs 1.5V), and improved reliability. DDR4 is a key component in computing systems, servers, and embedded applications, where it serves as the main system memory or as a buffer for high-speed data processing.
Key features of the K4A8G085WC-BIWE include a density of 8 Gb, an organization of 1G x 8, and a speed grade of 3200 Mbps. The device operates from a 1.2V power supply, with a separate VDDQ of 1.2V, and supports on-die termination (ODT) and programmable read/write latencies. It also features auto-refresh and self-refresh modes for power saving, and a burst length of 8 (BL8) with burst chop (BC4) support. The industrial temperature range (-40°C to +95°C) ensures reliable operation in harsh conditions, such as automotive and industrial control systems.
Technically, the K4A8G085WC-BIWE is built on Samsung's advanced DRAM process technology, offering high cell density and low power consumption. It incorporates a pseudo-open-drain (POD) interface for the data bus, which reduces I/O power. The device supports a 1.2V supply with an on-chip voltage regulator for the core, and it includes a temperature-compensated self-refresh (TCSR) feature to adjust refresh rates based on temperature, enhancing reliability. The 78-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm.
Typical applications include industrial controllers, embedded computing modules, networking equipment, and data storage systems. The wide temperature range and high speed make it ideal for use in rugged environments where standard commercial-grade memory would fail. It is also used in firmware boot, data logging, and as a buffer in high-speed communication systems.
When designing with this device, ensure proper decoupling of the VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed close to the balls. The DDR4 interface requires careful PCB layout to maintain signal integrity, including matched trace lengths and controlled impedance. Also, follow the JEDEC DDR4 standard for termination and reference voltage (VREF) generation.
Alternativas directas para K4A8G085WC-BIWE — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K4A8G085WC-BIWE (mismo factor de forma y huella) — difiere en Package, Data Rate, Operating Temperature, Burst Length, Density.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
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Ver hoja de datos →K4A8G085WC-BCWE
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Ver hoja de datos →K4A8G085WG-BIWE
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
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Ver hoja de datos →K4A8G085WC-BIWE Valores máximos y características eléctricas
| Tipo de memoria | DDR4 SDRAM |
| Density | 8 Gb |
| Organización de memoria | 1G x 8 |
| Velocidad de datos | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V |
| Supply Voltage (VDDQ) | 1.2 V |
| Rango de temperatura de funcionamiento | -40°C to +95°C |
| Encapsulado | 78-FBGA |
| Tipo de montaje | Surface Mount |
| Interfaz | POD-12 |
| Burst Length | 8 (BL8), 4 (BC4) |
| Latencia CAS | 22 (CL22) |
| Refresh | Auto-refresh, self-refresh |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
Configuración de pines de K4A8G085WC-BIWE
| Pin A1 | VDD — Power supply (1.2V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | VSS — Ground |
| Pin B1 | VDDQ — I/O power supply (1.2V) |
| Pin B2 | DQ1 — Data input/output 1 |
| Pin B3 | VSSQ — I/O ground |
| Pin C1 | VSS — Ground |
| Pin C2 | DQ2 — Data input/output 2 |
| Pin C3 | VDD — Power supply (1.2V) |
| Pin D1 | DQ3 — Data input/output 3 |
| Pin D2 | VSSQ — I/O ground |
| Pin D3 | DQ4 — Data input/output 4 |
Aplicaciones típicas
K4A8G085WC-BIWE es adecuado para 6 aplicacións: Industrial Controllers, Embedded Computing Modules, Networking Equipment, Data Storage Systems, Automotive Infotainment, Medical Monitoring Devices.
Industrial Controllers
The K4A8G085WC-BIWE is ideal for industrial controllers that operate in harsh environments with wide temperature swings. Its -40°C to +95°C range ensures reliable operation in factory floors, outdoor equipment, and automotive systems. The 3200 Mbps data rate provides fast data processing for real-time control loops, while the 1.2V supply reduces power dissipation in compact enclosures. When used as main memory in PLCs or CNC machines, it enables quick access to program data and sensor logs, improving overall system responsiveness.
Recomendado
Embedded Computing Modules
In embedded computing modules like single-board computers and edge AI devices, the K4A8G085WC-BIWE provides high-bandwidth memory for running operating systems and complex algorithms. Its 8 Gb capacity is sufficient for Linux-based applications, and the 3200 Mbps speed supports fast data transfer between CPU and memory. The industrial temperature range makes it suitable for outdoor kiosks, digital signage, and in-vehicle infotainment. The 78-FBGA package allows for compact module designs, and the low 1.2V supply helps manage thermal budgets in fanless systems.
Recomendado
Networking Equipment
The K4A8G085WC-BIWE is well-suited for networking equipment such as routers, switches, and firewalls, where high-speed packet processing requires fast memory access. The 3200 Mbps data rate ensures low latency for routing tables and buffering, while the 8 Gb capacity supports large forwarding databases. The industrial temperature range allows deployment in telecom cabinets and outdoor base stations. The 1.2V supply reduces power consumption in always-on network devices, and the FBGA package enables high-density PCB layouts for multi-port designs.
Recomendado
Data Storage Systems
In data storage systems like SSDs and RAID controllers, the K4A8G085WC-BIWE serves as a cache buffer for fast read/write operations. Its high speed (3200 Mbps) and large capacity (8 Gb) enable efficient caching of frequently accessed data, improving overall storage performance. The industrial temperature range is critical for enterprise storage that operates 24/7 in data centers. The low power consumption of DDR4 helps reduce cooling requirements, and the FBGA package is compatible with standard memory interfaces used in storage controllers.
Recomendado
Automotive Infotainment
The K4A8G085WC-BIWE is designed for automotive infotainment systems that require high-speed memory for navigation, multimedia, and connectivity features. Its -40°C to +95°C range meets AEC-Q100 Grade 3 requirements, ensuring reliable operation in vehicle cabins. The 3200 Mbps data rate supports smooth video playback and responsive user interfaces, while the 8 Gb capacity can hold map data and application code. The 1.2V supply is compatible with automotive power rails, and the FBGA package withstands vibration and thermal cycling.
Recomendado
Medical Monitoring Devices
In medical monitoring devices such as patient monitors and diagnostic equipment, the K4A8G085WC-BIWE provides reliable memory for data logging and real-time signal processing. The industrial temperature range ensures operation in clinical environments, and the high speed allows for fast processing of physiological signals. The 8 Gb capacity can store hours of patient data, and the low power consumption is beneficial for battery-powered portable devices. The FBGA package is suitable for compact medical PCBs, and the RoHS compliance meets medical device regulations.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K4A8G085WC-BIWE — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K4A8G085WB-BIWE | K4A8G085WC-BCWE | MT40A512M16JY-07EAIT |
|---|---|---|---|---|
| Package | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | 0°C to +85°C | -40°C to +95°C |
| Lifecycle | Active | Active | Active | Active |
Diferenciadores clave
- Industrial temperature range (-40°C to +95°C) (frente a K4A8G085WC-BCWE)
- Active lifecycle status (frente a K4A8G085WC-BCRC)
- Same-brand drop-in compatibility (frente a MT40A512M16JY-07EAIT)
Notas de diseño
For DDR4 routing, maintain 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 10 mils for data and address/command groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ ball. Use a solid ground plane beneath the FBGA to minimize noise.
The K4A8G085WC-BIWE operates up to +95°C, but ensure adequate airflow or heatsinking in high-ambient environments. The 78-FBGA package has a theta_JA of approximately 20°C/W. For a typical power dissipation of 1.5W, the junction temperature rise is 30°C, so keep ambient below 65°C to stay within limits.
DDR4 uses a pseudo-open-drain (POD) interface with on-die termination (ODT). Set ODT values according to the system topology to reduce reflections. Use VREF calibration and ensure VREF is generated with low noise. Follow JEDEC JESD79-4 guidelines for termination and routing.
Información de cumplimiento
RoHS compliant per LCSC listing. AEC-Q100 not specified; industrial temp range suggests suitability for automotive but not formally qualified.
