K4RCH046VM-2CLP - 32Gb DDR5 SDRAM 6400Mbps | Samsung
MPN: K4RCH046VM-2CLP ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.8 | $118.00 |
| 100 | $11.2 | $1,120.00 |
| 500 | $10.65 | $5,325.00 |
| 1,000 | $10.1 | $10,100.00 |
Drop-in alternatives for K4RCH046VM-2CLP — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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K4RCH046VM-2CCM
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View Datasheet →K4RHE165VB-BCWM
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View Datasheet →K4RHE086VB-BCWM
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View Datasheet →K4RCH046VM-2CLP Maximum Ratings & Electrical Characteristics
| Memory Type | DDR5 SDRAM |
| Density | 32 Gb |
| Organization | 4G x 4 |
| Data Rate | 6400 Mbps |
| Supply Voltage | 1.1 V |
| Operating Temperature | 0C to 85C |
| Package | 78-FBGA |
| Mounting Type | Surface Mount |
| Configuration | x4 component |
| Interface | DDR5 (SSTL-style low-voltage signaling) |
| Family Speed Range (Samsung DDR5) | up to 7200 Mbps |
| Family Density Range (Samsung DDR5) | 16 Gb to 32 Gb |
| Power Efficiency vs DDR4 | Approx. 30% greater |
| Product Status (per distributor listing) | Sample / Active supply via distribution |
K4RCH046VM-2CLP 78-fbga Pin Configuration Guide
Complete pinout information for K4RCH046VM-2CLP (78-fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4RCH046VM-2CLP.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4RCH046VM-2CLP is suitable for 6 applications: Data Center Server RDIMM, AI/HPC Accelerator Memory, Premium PC and Workstation DIMMs, Networking and Telecom Equipment, Test and Measurement / Server Validation Platforms, Storage Controllers and Enterprise SSD Cache.
Data Center Server RDIMM
The K4RCH046VM-2CLP is a primary building block for DDR5 RDIMMs in hyperscale and enterprise servers. Its 32Gb x4 organization allows module makers to assemble high-capacity registered DIMMs (32GB to 256GB classes) using x4 stacking, while the 6400 Mbps rate matches DDR5-6400 server platforms from Intel and AMD. Compared with DDR4-3200 designs, DDR5-6400 at 1.1V doubles effective bandwidth per channel and cuts DRAM power by roughly 30% per Samsung's family data. On-module PMIC power delivery plus on-die ECC raises reliability for always-on virtualization workloads. Design trade-off: fly-by routing and DFE training must be validated on the module PCB at the full 6400 Mbps rate.
Recommended
AI/HPC Accelerator Memory
AI training and inference nodes demand both memory capacity per GPU/CPU socket and bandwidth per watt, exactly the profile of the K4RCH046VM-2CLP. The 32Gb per-component density lets 8-12 DIMM channels reach multiple terabytes per node, while 6400 Mbps operation feeds HBM-offloaded or CPU-resident tensors in large-model inference. Samsung's roughly 30% DDR4-efficiency gain directly lowers data-center PUE-linked energy cost at scale. In practice the component is assembled into x4-organized RDIMMs with a dedicated PMIC; bank-group parallelism in DDR5 sustains bandwidth even at moderate row-hit rates. The trade-off versus HBM is latency and per-channel bandwidth, making this part ideal as host-side capacity memory complementing accelerator HBM.
Recommended
Premium PC and Workstation DIMMs
Workstation and premium desktop platforms support DDR5-6400 unbuffered DIMMs, and the K4RCH046VM-2CLP supplies the x4 component density for high-capacity UDIMMs and SODIMMs used in content-creation and CAD workloads. The 1.1V rail keeps laptop and small-form-factor thermals manageable, and on-die ECC improves silent-data-corruption resilience versus DDR4 client memory. Distributors (Kingrole, Uvation) position the 32GB DDR5 class built on this component for premium PCs and workstations specifically. Design consideration: consumer memory controllers may cap effective rates below 6400 Mbps; verify JEDEC SPD binning and, for overclocking profiles, validate XMP/EXPO timing tables against the Samsung -2CLP speed-bin timing tables.
Recommended
Networking and Telecom Equipment
High-throughput switches, routers, and 5G baseband cards use DDR5 RDIMM or soldered-down DRAM for packet buffers, flow tables, and control-plane memory. The K4RCH046VM-2CLP's 6400 Mbps rate sustains the read/write mixing typical of packet-buffer traffic, while the x4 organization enables deep, wide memories from a compact FBGA footprint. Its 1.1V operation reduces the thermal budget in constrained telecom shelf designs, a benefit Samsung quantifies as roughly 30% versus DDR4. Reliability features such as on-die ECC matter for carrier-grade uptime targets. Layout guidance: at 6400 Mbps, keep component-to-controller trace lengths within the JEDEC DDR5 module reference and tune ODT per trace impedance.
Recommended
Test and Measurement / Server Validation Platforms
Memory ATE handlers, DDR5 protocol validators, and server-validation benches use known-good Samsung DDR5 components such as the K4RCH046VM-2CLP as golden/reference devices for signal-integrity and training-algorithm bring-up. The part's JEDEC-standard 78-ball FBGA footprint mates with socket-and-interposer fixtures, and its 6400 Mbps -2CLP bin exercises mid-to-high-rate DDR5-6400 timing corners used in controller compliance testing. Distributor sample status (per Elite Memory Solutions) makes it practical for lab qualification lots. Engineering note: for characterization, sweep VDD around the 1.1V nominal and record eye margins at each ODT setting, since DDR5 training behavior varies measurably with supply voltage within the allowed tolerance band.
Recommended
Storage Controllers and Enterprise SSD Cache
Enterprise NVMe controllers and scale-out storage nodes rely on DDR5 host-memory or onboard DRAM for FTL mapping tables, write caches, and metadata. The K4RCH046VM-2CLP's 32Gb density minimizes DRAM component count per board, shrinking BOM and layout area, while 6400 Mbps access keeps mapping-table lookups from throttling QD-deep NVMe queues. The 1.1V rail suits storage appliances with shared PSUs and tight airflow, and on-die ECC supports the data-integrity posture expected of enterprise storage. Soldered-down x4 FBGA devices also resist vibration better than DIMM sockets in JBOD-style chassis. Design tip: size the DRAM at roughly 1 GB DRAM per 1 TB NAND (industry rule of thumb) and budget refresh overhead in sustained-write models.
Recommended
Recommended Products Summary
Engineering reference data for K4RCH046VM-2CLP — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4RCH046VM-2CCM | K4RHE165VB-BCWM | K4RHE086VB-BCWM |
|---|---|---|---|---|
| Package | 78-FBGA | 78-FBGA - same footprint | FBGA (Samsung DDR5 family) | FBGA (Samsung DDR5 family) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 32 Gb | 32 Gb | 16 Gb | 16 Gb |
| Organization | 4G x 4 | 4G x 4 | [DATA_NEEDED] | [DATA_NEEDED] |
| Data Rate | 6400 Mbps | 6400 Mbps class (different bin) | [DATA_NEEDED] | [DATA_NEEDED] |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Operating Temperature | 0C to 85C | 0C to 85C | [DATA_NEEDED] | [DATA_NEEDED] |
| Generation | DDR5 | DDR5 | DDR5 | DDR5 |
Key Differentiators
- Highest density in Samsung DDR5 component family (vs K4RHE165VB-BCWM)
- DDR5-6400 bandwidth class (vs K4RCH046VM-2CCM)
- DDR5 generation efficiency (vs K4RAH165VB-BCWM (DDR4 family))
Design Notes
At the K4RCH046VM-2CLP's 6400 Mbps rate, DDR5 signal integrity is the dominant design risk. Follow the JEDEC DDR5 module reference layout for fly-by or per-bank-group routing, maintain controlled impedance (typically 40 ohm for module-class designs per the reference), and length-match data strobes to their byte lanes tightly. The die-side DFE recovers some inter-symbol interference, but board-level crosstalk between adjacent DQ groups cannot be equalized away. Perform full memory training and eye-diagram capture at the target rate before locking routing.
The 1.1V VDD rail requires tight regulation within the DDR5 tolerance band; in RDIMM architectures this is provided by a dedicated on-module PMIC (for example a Renesas or Richtek DDR5 PMIC), while board-level designs must supply low-noise 1.1V plus VDDQ/VPP per the Samsung datasheet. Decouple each FBGA ball-group per the DDR5 layout reference with a dense array of 0402 ceramics. DDR5's roughly 30% efficiency gain over DDR4 comes partly from this lower rail, so avoid over-provisioning headroom that erases the benefit.
Do not interchange speed grades without retraining: the -2CLP and -2CCM suffixes denote different timing bins, and a controller configured for one bin may fail training or margin at the other. Also, 0C to 85C is a commercial range - do not deploy in industrial -40C environments without Samsung qualification. Finally, verify genuine sourcing: broker channels for 32Gb DDR5 components are counterfeit-prone; buy from authorized distribution or request date-code and traceability documentation.
Compliance Information
Compliance data not present in provided web data; request Samsung product compliance documentation (RoHS/REACH declarations) via distributor or Samsung partner portal.
