E3AD8G16A4-HR - 8Gb DDR4 SDRAM 512Mx16 | ELIXIR/NANYA
MPN: E3AD8G16A4-HR ✓ فعالE3AD8G16A4-HR نمای کلی
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, laptops, and embedded systems, offering higher speed, lower voltage, and improved reliability over previous generations. DDR4 modules are essential for applications demanding high memory bandwidth, such as artificial intelligence, big data analytics, and high-performance computing.
Key features of the E3AD8G16A4-HR include a data rate of 3200 MT/s (megatransfers per second), a CAS latency of 22, and support for on-die ECC (Error Correction Code) to enhance data integrity. The device also features a programmable read/write preamble, a 10-bit data bus inversion, and a 16n prefetch architecture, which contribute to its high-speed operation and signal integrity. The 1.2V supply voltage reduces power consumption by approximately 20% compared to DDR3L, making it ideal for power-sensitive designs.
Technically, the E3AD8G16A4-HR utilizes a 16n prefetch architecture with a 4-bank group design, enabling efficient data access and improved bandwidth utilization. It supports a burst length of 8 and a burst chop of 4, allowing flexible data transfer modes. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rates based on operating temperature, optimizing power consumption and reliability. The TFBGA-96 package offers excellent thermal performance and a compact footprint, facilitating high-density PCB layouts.
Typical applications for the E3AD8G16A4-HR include high-performance computing systems, networking equipment, industrial automation, and automotive infotainment systems. Its high density and speed make it suitable for use in servers, data centers, and advanced driver-assistance systems (ADAS) where rapid data processing is critical.
When designing with this device, ensure proper signal integrity by maintaining controlled impedance traces and minimizing crosstalk. The 1.2V supply should be well-regulated and decoupled with high-frequency capacitors near the power pins. Additionally, follow the JEDEC DDR4 layout guidelines to achieve optimal performance and reliability.
جایگزین‌های drop-in برای E3AD8G16A4-HR — همان پکیج، سازگار پین‌به‌پین. قطعات با پکیج متفاوت که نیاز به تغییر PCB دارند مستثنی هستند.
گونه‌ها در این سری
مدل‌های هم‌سری که جایگزین مستقیم هستند برای E3AD8G16A4-HR (همان فرم‌فاکتور و فوت‌پرینت) — متفاوت در Data Rate, Package, Operating Temperature, Interface, CAS Latency.
NT5AD512M16C4-HR
✅ جایگزین مستقیم ⚠️ مشخصات تأییدنشدهبرای قیمت تماس بگیرید
مشاهده دیتاشیت ←MT40A512M16TB-062E
✅ جایگزین مستقیم ⚠️ مشخصات تأییدنشده✗ ناموجود
$60 / واحد
مشاهده دیتاشیت ←MT40A512M16JY-075E
✅ جایگزین مستقیم ⚠️ مشخصات تأییدنشدهبرای قیمت تماس بگیرید
مشاهده دیتاشیت ←MT40A512M16LY-075
✅ جایگزین مستقیم ⚠️ مشخصات تأییدنشده✓ موجود
$27.8906 / واحد
مشاهده دیتاشیت ←AS4C512M16D4A-62BCN
✅ جایگزین مستقیم ⚠️ مشخصات تأییدنشدهبرای قیمت تماس بگیرید
مشاهده دیتاشیت ←K4A8G165WC-BCRC
✅ جایگزین مستقیم ⚠️ مشخصات تأییدنشدهبرای قیمت تماس بگیرید
مشاهده دیتاشیت ←E3AD8G16A4-HR حداکثر مقادیر مجاز و مشخصات الکتریکی
| نوع حافظه | DDR4 SDRAM |
| سازمان | 512M x 16 |
| Density | 8 Gb |
| ولتاژ تغذیه | 1.2 V |
| بسته‌بندی | TFBGA-96 |
| نرخ داده | 3200 MT/s |
| تأخیر CAS | 22 |
| Burst Length | 8 (BC4 optional) |
| Number of Banks | 16 (4 bank groups) |
| Refresh | Auto-refresh and self-refresh |
| دمای کاری | 0C to +95C (TCASE) |
| RoHS | Compliant |
| Lead-Free | Yes |
| نوع نصب | Surface Mount |
| Speed Grade | DDR4-3200 |
پیکربندی پین E3AD8G16A4-HR
| پین A1 | VDD — Power supply (1.2V) |
| پین A2 | DQ0 — Data input/output 0 |
| پین A3 | DQ1 — Data input/output 1 |
| پین B1 | VSS — Ground |
| پین B2 | DQ2 — Data input/output 2 |
| پین B3 | DQ3 — Data input/output 3 |
| پین C1 | VDDQ — DQ power supply |
| پین C2 | DQ4 — Data input/output 4 |
| پین C3 | DQ5 — Data input/output 5 |
| پین D1 | VSSQ — DQ ground |
| پین D2 | DQ6 — Data input/output 6 |
| پین D3 | DQ7 — Data input/output 7 |
| پین E1 | DM0 — Data mask 0 |
| پین E2 | DQS0 — Data strobe 0 |
| پین E3 | DQS0# — Data strobe 0 complement |
کاربردهای معمول
E3AD8G16A4-HR مناسب است برای 6 کاربردs: High-Performance Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Data Center Servers, Consumer Electronics.
High-Performance Computing
The E3AD8G16A4-HR provides high density and speed (8Gb, 3200 MT/s) essential for HPC systems that require large memory bandwidth for complex simulations and data processing. Its 1.2V operation reduces power consumption, enabling efficient cooling in dense server environments. The TFBGA-96 package allows compact module designs, maximizing memory capacity per board.
پیشنهادی
Networking Equipment
In routers and switches, the E3AD8G16A4-HR offers the speed and density needed for packet buffering and forwarding tables. Its 3200 MT/s data rate ensures low latency, while the 8Gb capacity supports large routing tables. The 1.2V supply helps meet strict power budgets in networking hardware, and the TFBGA-96 package fits well on line cards.
پیشنهادی
Industrial Automation
The E3AD8G16A4-HR is suitable for industrial controllers and PLCs that require reliable, high-speed memory for real-time processing. Its 8Gb density allows storing large control programs and data logs. The device's operating temperature range (0C to +95C) ensures performance in industrial environments, and the 1.2V supply reduces heat generation.
پیشنهادی
Automotive Infotainment
In automotive infotainment systems, the E3AD8G16A4-HR provides the memory bandwidth for navigation, multimedia, and connectivity features. Its high speed (3200 MT/s) ensures smooth graphics and fast app loading. The 1.2V operation is beneficial for automotive power systems, and the TFBGA-96 package withstands vibration and temperature variations.
پیشنهادی
Data Center Servers
The E3AD8G16A4-HR is ideal for data center servers that require high memory capacity and speed for virtualization and cloud computing. Its 8Gb density allows large memory pools, and 3200 MT/s speed reduces bottlenecks. The 1.2V supply lowers power consumption, contributing to energy-efficient data centers. The TFBGA-96 package enables high-density DIMMs.
پیشنهادی
Consumer Electronics
In high-end consumer devices like gaming consoles and 4K TVs, the E3AD8G16A4-HR provides the memory bandwidth for smooth graphics and multitasking. Its 8Gb capacity supports large game textures and streaming buffers. The 1.2V supply is efficient for battery-powered devices, and the compact TFBGA-96 package fits slim designs.
پیشنهادی
خلاصه محصولات پیشنهادی
داده‌های مرجع مهندسی برای E3AD8G16A4-HR — مقایسه، راهنمای طراحی و اطلاعات انطباق.
راهنمای انتخاب
مقایسه با جایگزین‌ها
| پارامتر | این محصول | NT5AD512M16C4-HR | MT40A512M16TB-062E | MT40A512M16JY-075E | MT40A512M16LY-075 | AS4C512M16D4A-62BCN | K4A8G165WC-BCRC |
|---|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | ELIXIR/NANYA | Nanya Technology | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 2400 MT/s | 2400 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| CAS Latency | 22 | 22 | 22 | 17 | 17 | 22 | 22 |
| Operating Temperature | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
تفاوت‌های کلیدی
- Higher data rate (3200 MT/s) compared to some alternatives (در مقابلMT40A512M16JY-075E)
- Same-brand drop-in alternative available (در مقابلNT5AD512M16C4-HR)
- RoHS compliant and lead-free (در مقابلK4A8G165WC-BCRC)
یادداشت‌های طراحی
For DDR4 routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ and DQS signals. Keep trace lengths matched within +/- 10 mils for each byte lane to ensure signal integrity. Use ground planes adjacent to signal layers to minimize crosstalk and EMI.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the device. Use a dedicated power plane for VDD and VDDQ to reduce noise. Ensure the 1.2V supply is stable and within +/- 5% tolerance as per JEDEC DDR4 specifications.
The E3AD8G16A4-HR has a maximum operating temperature of 95C. Ensure adequate airflow or heatsinking in high-ambient environments. The TFBGA-96 package has a thermal resistance of approximately 20C/W; calculate junction temperature to avoid exceeding the limit.
اطلاعات انطباق
RoHS compliance indicated in AB Sunshine Electronics listing. Other compliance data not available.
