E3AD8G16A4-HR - 8Gb DDR4 SDRAM 512Mx16 | ELIXIR/NANYA
Référence : E3AD8G16A4-HR ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $10.1 | $1 010,00 |
| 500 | $9.3 | $4 650,00 |
| 1 000 | $8.6 | $8 600,00 |
E3AD8G16A4-HR Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, laptops, and embedded systems, offering higher speed, lower voltage, and improved reliability over previous generations. DDR4 modules are essential for applications demanding high memory bandwidth, such as artificial intelligence, big data analytics, and high-performance computing.
Key features of the E3AD8G16A4-HR include a data rate of 3200 MT/s (megatransfers per second), a CAS latency of 22, and support for on-die ECC (Error Correction Code) to enhance data integrity. The device also features a programmable read/write preamble, a 10-bit data bus inversion, and a 16n prefetch architecture, which contribute to its high-speed operation and signal integrity. The 1.2V supply voltage reduces power consumption by approximately 20% compared to DDR3L, making it ideal for power-sensitive designs.
Technically, the E3AD8G16A4-HR utilizes a 16n prefetch architecture with a 4-bank group design, enabling efficient data access and improved bandwidth utilization. It supports a burst length of 8 and a burst chop of 4, allowing flexible data transfer modes. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rates based on operating temperature, optimizing power consumption and reliability. The TFBGA-96 package offers excellent thermal performance and a compact footprint, facilitating high-density PCB layouts.
Typical applications for the E3AD8G16A4-HR include high-performance computing systems, networking equipment, industrial automation, and automotive infotainment systems. Its high density and speed make it suitable for use in servers, data centers, and advanced driver-assistance systems (ADAS) where rapid data processing is critical.
When designing with this device, ensure proper signal integrity by maintaining controlled impedance traces and minimizing crosstalk. The 1.2V supply should be well-regulated and decoupled with high-frequency capacitors near the power pins. Additionally, follow the JEDEC DDR4 layout guidelines to achieve optimal performance and reliability.
Alternatives de remplacement direct pour E3AD8G16A4-HR — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec E3AD8G16A4-HR (même facteur de forme et même empreinte) — différant par Data Rate, Package, Operating Temperature, Interface, CAS Latency.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5AD512M16C4-HR
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$43.1 / unité
Voir la fiche technique →MT40A512M16TB-062E
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$60 / unité
Voir la fiche technique →MT40A512M16JY-075E
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$30.5 / unité
Voir la fiche technique →MT40A512M16LY-075
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$27.8906 / unité
Voir la fiche technique →AS4C512M16D4A-62BCN
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$7.2 / unité
Voir la fiche technique →K4A8G165WC-BCRC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$23 / unité
Voir la fiche technique →E3AD8G16A4-HR Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Organisation de la mémoire | 512M x 16 |
| Density | 8 Gb |
| Tension d'alimentation | 1.2 V |
| Boîtier | TFBGA-96 |
| Débit de données | 3200 MT/s |
| Latence CAS | 22 |
| Burst Length | 8 (BC4 optional) |
| Number of Banks | 16 (4 bank groups) |
| Refresh | Auto-refresh and self-refresh |
| Température de fonctionnement | 0C to +95C (TCASE) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Type de montage | Surface Mount |
| Speed Grade | DDR4-3200 |
Configuration des broches de E3AD8G16A4-HR
| Broche A1 | VDD — Power supply (1.2V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — DQ power supply |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — DQ ground |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
| Broche E1 | DM0 — Data mask 0 |
| Broche E2 | DQS0 — Data strobe 0 |
| Broche E3 | DQS0# — Data strobe 0 complement |
Applications typiques
E3AD8G16A4-HR convient pour 6 applications: High-Performance Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Data Center Servers, Consumer Electronics.
High-Performance Computing
The E3AD8G16A4-HR provides high density and speed (8Gb, 3200 MT/s) essential for HPC systems that require large memory bandwidth for complex simulations and data processing. Its 1.2V operation reduces power consumption, enabling efficient cooling in dense server environments. The TFBGA-96 package allows compact module designs, maximizing memory capacity per board.
Recommandé
Networking Equipment
In routers and switches, the E3AD8G16A4-HR offers the speed and density needed for packet buffering and forwarding tables. Its 3200 MT/s data rate ensures low latency, while the 8Gb capacity supports large routing tables. The 1.2V supply helps meet strict power budgets in networking hardware, and the TFBGA-96 package fits well on line cards.
Recommandé
Industrial Automation
The E3AD8G16A4-HR is suitable for industrial controllers and PLCs that require reliable, high-speed memory for real-time processing. Its 8Gb density allows storing large control programs and data logs. The device's operating temperature range (0C to +95C) ensures performance in industrial environments, and the 1.2V supply reduces heat generation.
Recommandé
Automotive Infotainment
In automotive infotainment systems, the E3AD8G16A4-HR provides the memory bandwidth for navigation, multimedia, and connectivity features. Its high speed (3200 MT/s) ensures smooth graphics and fast app loading. The 1.2V operation is beneficial for automotive power systems, and the TFBGA-96 package withstands vibration and temperature variations.
Recommandé
Data Center Servers
The E3AD8G16A4-HR is ideal for data center servers that require high memory capacity and speed for virtualization and cloud computing. Its 8Gb density allows large memory pools, and 3200 MT/s speed reduces bottlenecks. The 1.2V supply lowers power consumption, contributing to energy-efficient data centers. The TFBGA-96 package enables high-density DIMMs.
Recommandé
Consumer Electronics
In high-end consumer devices like gaming consoles and 4K TVs, the E3AD8G16A4-HR provides the memory bandwidth for smooth graphics and multitasking. Its 8Gb capacity supports large game textures and streaming buffers. The 1.2V supply is efficient for battery-powered devices, and the compact TFBGA-96 package fits slim designs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour E3AD8G16A4-HR — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5AD512M16C4-HR | MT40A512M16TB-062E | MT40A512M16JY-075E | MT40A512M16LY-075 | AS4C512M16D4A-62BCN | K4A8G165WC-BCRC |
|---|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | ELIXIR/NANYA | Nanya Technology | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 2400 MT/s | 2400 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| CAS Latency | 22 | 22 | 22 | 17 | 17 | 22 | 22 |
| Operating Temperature | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Higher data rate (3200 MT/s) compared to some alternatives (vs MT40A512M16JY-075E)
- Same-brand drop-in alternative available (vs NT5AD512M16C4-HR)
- RoHS compliant and lead-free (vs K4A8G165WC-BCRC)
Notes de conception
For DDR4 routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ and DQS signals. Keep trace lengths matched within +/- 10 mils for each byte lane to ensure signal integrity. Use ground planes adjacent to signal layers to minimize crosstalk and EMI.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the device. Use a dedicated power plane for VDD and VDDQ to reduce noise. Ensure the 1.2V supply is stable and within +/- 5% tolerance as per JEDEC DDR4 specifications.
The E3AD8G16A4-HR has a maximum operating temperature of 95C. Ensure adequate airflow or heatsinking in high-ambient environments. The TFBGA-96 package has a thermal resistance of approximately 20C/W; calculate junction temperature to avoid exceeding the limit.
Informations de conformité
RoHS compliance indicated in AB Sunshine Electronics listing. Other compliance data not available.
