메모리 가격은 매일 변동되므로 — 사이트 내 가격은 시장 상황보다 뒤처질 수 있습니다. 최신 견적을 받으시려면 RFQ를 제출해 주세요.
최신 가격 요청 →
ELIXIR/NANYA

E3AD8G16A4-HR - 8Gb DDR4 SDRAM 512Mx16 | ELIXIR/NANYA

부품 번호: E3AD8G16A4-HR ✓ 활성
재고 있음 영업일 기준 1~3일 내 발송
1.2 V Vdss TFBGA-96 Package DDR4-3200 Speed DDR4 SDRAM Memory
시작가 $8.6 USD / 개
MOQ: 1 |
가격 업데이트: 2026-08-20
볼륨 가격
수량 단가 합계
1 $12.5 $12.50
10 $11.2 $112.00
100 $10.1 $1,010.00
500 $9.3 $4,650.00
1,000 $8.6 $8,600.00
ℹ️ 모든 가격은 USD 기준입니다

E3AD8G16A4-HR 개요

The E3AD8G16A4-HR is a high-performance DDR4 SDRAM device from ELIXIR/NANYA, organized as 512M x 16 bits, providing 8 Gigabits of memory density. It operates from a 1.2V power supply and is housed in a 96-ball TFBGA package, making it suitable for space-constrained applications requiring high bandwidth and low power consumption.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, laptops, and embedded systems, offering higher speed, lower voltage, and improved reliability over previous generations. DDR4 modules are essential for applications demanding high memory bandwidth, such as artificial intelligence, big data analytics, and high-performance computing.

Key features of the E3AD8G16A4-HR include a data rate of 3200 MT/s (megatransfers per second), a CAS latency of 22, and support for on-die ECC (Error Correction Code) to enhance data integrity. The device also features a programmable read/write preamble, a 10-bit data bus inversion, and a 16n prefetch architecture, which contribute to its high-speed operation and signal integrity. The 1.2V supply voltage reduces power consumption by approximately 20% compared to DDR3L, making it ideal for power-sensitive designs.

Technically, the E3AD8G16A4-HR utilizes a 16n prefetch architecture with a 4-bank group design, enabling efficient data access and improved bandwidth utilization. It supports a burst length of 8 and a burst chop of 4, allowing flexible data transfer modes. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rates based on operating temperature, optimizing power consumption and reliability. The TFBGA-96 package offers excellent thermal performance and a compact footprint, facilitating high-density PCB layouts.

Typical applications for the E3AD8G16A4-HR include high-performance computing systems, networking equipment, industrial automation, and automotive infotainment systems. Its high density and speed make it suitable for use in servers, data centers, and advanced driver-assistance systems (ADAS) where rapid data processing is critical.

When designing with this device, ensure proper signal integrity by maintaining controlled impedance traces and minimizing crosstalk. The 1.2V supply should be well-regulated and decoupled with high-frequency capacitors near the power pins. Additionally, follow the JEDEC DDR4 layout guidelines to achieve optimal performance and reliability.

드롭인 대체품: E3AD8G16A4-HR — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.

이 시리즈의 변형

다음과 드롭인 호환되는 동일 시리즈 모델: E3AD8G16A4-HR (동일 폼 팩터 및 풋프린트) — 차이점: Data Rate, Package, Operating Temperature, Interface, CAS Latency.

Alliance Memory
Data Rate: 1600 MHz (3200 Mbps)
Package: 96-FBGA (7.5x13 mm)
Operating Temperature: 0°C to 95°C
비교 대상: E3AD8G16A4-HR →
Samsung Electronics
Data Rate: 2400 Mbps
Package: 96-ball FBGA (9mm x 13mm)
Operating Temperature: 0°C to +95°C (case)
비교 대상: E3AD8G16A4-HR →
Micron Technology
Data Rate: 2666 MT/s
Package: 96-FBGA (8x14)
Interface: Parallel
비교 대상: E3AD8G16A4-HR →
Micron Technology
Data Rate: DDR4-2666
Package: 96-FBGA (7.5x13.5 mm)
비교 대상: E3AD8G16A4-HR →
Micron Technology
Data Rate: 1600 MHz (DDR4-3200)
Package: 96-FBGA (7.5x13 mm)
Interface: Parallel
비교 대상: E3AD8G16A4-HR →
Nanya Technology
Data Rate: 1.333 GHz (DDR4-2666)
Package: FBGA-96 (TFBGA)
Operating Temperature: 0°C to +95°C
비교 대상: E3AD8G16A4-HR →

빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:

NT5AD512M16C4-HR

✅ 드롭인 ⚠️ 사양 미검증
Nanya Technology
📦 TFBGA-96
DDR4 SDRAM · 512M x 16 · 8 Gbit · 1.2 V · 1.333 GHz (DDR4-2666) · 0°C to +95°C · FBGA-96 (TFBGA) · 96

✓ 재고 있음

$43.1 / 개

데이터시트 보기 →

MT40A512M16TB-062E

✅ 드롭인 ⚠️ 사양 미검증
Micron Technology
📦 TFBGA-96
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1600 MHz (DDR4-3200) · 1.2V ±60mV · 2.5V, -125mV, +250mV · 19 ns · 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C

✓ 재고 있음

$60 / 개

데이터시트 보기 →

MT40A512M16JY-075E

✅ 드롭인 ⚠️ 사양 미검증
Micron Technology
📦 TFBGA-96
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.33 GHz · 2666 MT/s · 1.14V to 1.26V · 2.5V (-125mV, +250mV) · Parallel

✓ 재고 있음

$30.5 / 개

데이터시트 보기 →

MT40A512M16LY-075

✅ 드롭인 ⚠️ 사양 미검증
Micron Technology
📦 TFBGA-96
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.33 GHz · DDR4-2666 · 1.2V ±60mV · 2.5V (-125mV, +250mV) · 1.2V pseudo open-drain

✓ 재고 있음

$8.1 / 개

데이터시트 보기 →

AS4C512M16D4A-62BCN

✅ 드롭인 ⚠️ 사양 미검증
Alliance Memory
📦 TFBGA-96
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.2 V · 1600 MHz (3200 Mbps) · 18 ns · 96-FBGA (7.5x13 mm) · 0°C to 95°C

✓ 재고 있음

$7.2 / 개

데이터시트 보기 →

K4A8G165WC-BCRC

✅ 드롭인 ⚠️ 사양 미검증
Samsung Electronics
📦 TFBGA-96
DDR4 SDRAM · 8 Gb · 512M x 16 · 2400 Mbps · 1.2 V (1.14V to 1.26V) · 2.5 V · 0°C to +95°C (case) · 96-ball FBGA (9mm x 13mm)

✓ 재고 있음

$23 / 개

데이터시트 보기 →

E3AD8G16A4-HR 최대 정격 & 전기적 특성

메모리 유형 DDR4 SDRAM
메모리 구성 512M x 16
Density 8 Gb
공급 전압 1.2 V
패키지 TFBGA-96
데이터 속도 3200 MT/s
CAS 레이턴시 22
Burst Length 8 (BC4 optional)
Number of Banks 16 (4 bank groups)
Refresh Auto-refresh and self-refresh
동작 온도 0C to +95C (TCASE)
RoHS Compliant
Lead-Free Yes
실장 유형 Surface Mount
Speed Grade DDR4-3200

E3AD8G16A4-HR 핀 구성

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
핀 A1 VDD — Power supply (1.2V)
핀 A2 DQ0 — Data input/output 0
핀 A3 DQ1 — Data input/output 1
핀 B1 VSS — Ground
핀 B2 DQ2 — Data input/output 2
핀 B3 DQ3 — Data input/output 3
핀 C1 VDDQ — DQ power supply
핀 C2 DQ4 — Data input/output 4
핀 C3 DQ5 — Data input/output 5
핀 D1 VSSQ — DQ ground
핀 D2 DQ6 — Data input/output 6
핀 D3 DQ7 — Data input/output 7
핀 E1 DM0 — Data mask 0
핀 E2 DQS0 — Data strobe 0
핀 E3 DQS0# — Data strobe 0 complement

일반적인 애플리케이션

E3AD8G16A4-HR 적합 용도: 6 애플리케이션s: High-Performance Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Data Center Servers, Consumer Electronics.

🖥️

High-Performance Computing

The E3AD8G16A4-HR provides high density and speed (8Gb, 3200 MT/s) essential for HPC systems that require large memory bandwidth for complex simulations and data processing. Its 1.2V operation reduces power consumption, enabling efficient cooling in dense server environments. The TFBGA-96 package allows compact module designs, maximizing memory capacity per board.

🌐

Networking Equipment

In routers and switches, the E3AD8G16A4-HR offers the speed and density needed for packet buffering and forwarding tables. Its 3200 MT/s data rate ensures low latency, while the 8Gb capacity supports large routing tables. The 1.2V supply helps meet strict power budgets in networking hardware, and the TFBGA-96 package fits well on line cards.

🏭

Industrial Automation

The E3AD8G16A4-HR is suitable for industrial controllers and PLCs that require reliable, high-speed memory for real-time processing. Its 8Gb density allows storing large control programs and data logs. The device's operating temperature range (0C to +95C) ensures performance in industrial environments, and the 1.2V supply reduces heat generation.

🚗

Automotive Infotainment

In automotive infotainment systems, the E3AD8G16A4-HR provides the memory bandwidth for navigation, multimedia, and connectivity features. Its high speed (3200 MT/s) ensures smooth graphics and fast app loading. The 1.2V operation is beneficial for automotive power systems, and the TFBGA-96 package withstands vibration and temperature variations.

🖥️

Data Center Servers

The E3AD8G16A4-HR is ideal for data center servers that require high memory capacity and speed for virtualization and cloud computing. Its 8Gb density allows large memory pools, and 3200 MT/s speed reduces bottlenecks. The 1.2V supply lowers power consumption, contributing to energy-efficient data centers. The TFBGA-96 package enables high-density DIMMs.

📺

Consumer Electronics

In high-end consumer devices like gaming consoles and 4K TVs, the E3AD8G16A4-HR provides the memory bandwidth for smooth graphics and multitasking. Its 8Gb capacity supports large game textures and streaming buffers. The 1.2V supply is efficient for battery-powered devices, and the compact TFBGA-96 package fits slim designs.

What is the memory density of E3AD8G16A4-HR?
The E3AD8G16A4-HR has a memory density of 8 Gigabits (Gb), organized as 512M x 16 bits. According to the AB Sunshine Electronics listing, it is a DDR4 SDRAM with a 512Mx16 organization, providing 8Gb of storage. This density is suitable for applications requiring high memory capacity in a compact package.
What is the operating voltage of E3AD8G16A4-HR?
The E3AD8G16A4-HR operates at a supply voltage of 1.2V, which is standard for DDR4 SDRAM. This lower voltage compared to DDR3 (1.5V) reduces power consumption by approximately 20%, making it ideal for power-sensitive applications such as laptops and embedded systems.
What package does E3AD8G16A4-HR come in?
The E3AD8G16A4-HR is housed in a 96-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package. This package offers a compact footprint and excellent thermal performance, suitable for high-density PCB designs. The TFBGA-96 package is commonly used for DDR4 memory devices.
What is the data rate of E3AD8G16A4-HR?
The E3AD8G16A4-HR supports a data rate of 3200 MT/s (megatransfers per second), which corresponds to DDR4-3200 speed grade. This high data rate enables fast data transfer for memory-intensive applications such as gaming, data centers, and high-performance computing.
Is E3AD8G16A4-HR RoHS compliant?
Yes, the E3AD8G16A4-HR is RoHS compliant. The AB Sunshine Electronics listing indicates RoHS compliance, meaning it meets the European Union's Restriction of Hazardous Substances directive. This ensures the device is free from lead, mercury, cadmium, and other restricted substances.
What is the price of E3AD8G16A4-HR?
As of 2026-08-20, the price of E3AD8G16A4-HR varies by quantity. For single-unit purchases, the price is approximately $12.50. For quantities of 1000, the price drops to around $8.60. These prices are indicative and may vary by distributor and market conditions.
Where can I buy E3AD8G16A4-HR online?
The E3AD8G16A4-HR can be purchased from AB Sunshine Electronics, as listed on their website. Additionally, major distributors like DigiKey, Mouser, and Octopart may carry this part. It is advisable to check availability and pricing on these platforms for the most current information.
What is the lead time for E3AD8G16A4-HR?
The lead time for E3AD8G16A4-HR depends on the distributor and current inventory levels. As of 2026-08-20, AB Sunshine Electronics offers the part, but lead time may vary. It is recommended to contact the distributor directly for accurate lead time information.
Is E3AD8G16A4-HR in stock?
Stock availability for E3AD8G16A4-HR varies by distributor. AB Sunshine Electronics lists the part, indicating availability. However, it is advisable to check real-time inventory on distributor websites like DigiKey or Mouser to confirm current stock status.
What is the difference between E3AD8G16A4-HR and MT40A512M16LY-075?
The E3AD8G16A4-HR is a DDR4 SDRAM from ELIXIR/NANYA with a density of 8Gb and a data rate of 3200 MT/s. The MT40A512M16LY-075 is a Micron DDR4 SDRAM with the same density (512Mx16) but a lower data rate of 2400 MT/s (DDR4-2400). Both are pin-compatible in TFBGA-96 package, but the E3AD8G16A4-HR offers higher speed.
When should I choose E3AD8G16A4-HR over MT40A512M16JY-075E?
Choose the E3AD8G16A4-HR when you need a higher data rate of 3200 MT/s compared to the MT40A512M16JY-075E, which operates at 2400 MT/s. If your application requires maximum memory bandwidth, the E3AD8G16A4-HR is the better choice. However, if power consumption is a concern, both are similar, but the Micron part may have different thermal characteristics.
What is the best drop-in replacement for E3AD8G16A4-HR?
The best drop-in replacement for E3AD8G16A4-HR is the NT5AD512M16C4-HR from Nanya, which is pin-compatible and has the same 512Mx16 organization and DDR4-3200 speed. Other options include the MT40A512M16TB-062E from Micron, which also offers similar specifications. Always verify pinout and timing parameters before substitution.
Can MT40A512M16LY-062E replace E3AD8G16A4-HR?
Yes, the MT40A512M16LY-062E can replace the E3AD8G16A4-HR as it is a DDR4 SDRAM with the same 512Mx16 organization and TFBGA-96 package. However, the MT40A512M16LY-062E operates at a lower data rate of 2400 MT/s, so ensure your system can accommodate the reduced speed. Verify pin compatibility before replacement.
Where can I download the E3AD8G16A4-HR datasheet PDF?
The E3AD8G16A4-HR datasheet can be downloaded from the AB Sunshine Electronics product page at https://www.absunshine.com/en/parts/E3AD8G16A4-HR-ELIXIR-NANYA-6307230. Additionally, you can search on alldatasheet.com or the manufacturer's official website for the latest datasheet.
What are the key specifications of E3AD8G16A4-HR that engineers should know?
Engineers should know that the E3AD8G16A4-HR is an 8Gb DDR4 SDRAM organized as 512Mx16, operating at 1.2V with a data rate of 3200 MT/s. It comes in a TFBGA-96 package and supports burst length of 8. These specifications make it suitable for high-performance computing and networking applications where speed and density are critical.

엔지니어링 참조 데이터: E3AD8G16A4-HR — 비교, 설계 지침 및 규정 준수 정보.

선택 가이드

Choose the E3AD8G16A4-HR when you need a high-speed (3200 MT/s) 8Gb DDR4 SDRAM in a TFBGA-96 package. It is ideal for applications requiring maximum memory bandwidth, such as high-performance computing and data centers. If you require a lower-cost option with reduced speed, consider the MT40A512M16JY-075E or MT40A512M16LY-075 (2400 MT/s). For a same-brand alternative with identical specs, the NT5AD512M16C4-HR is a drop-in replacement. If you prefer a different manufacturer, the MT40A512M16TB-062E from Micron or K4A8G165WC-BCRC from Samsung offer similar performance. Always verify pin compatibility and timing parameters before substitution.

대체품과의 비교

파라미터 이 제품 NT5AD512M16C4-HR MT40A512M16TB-062E MT40A512M16JY-075E MT40A512M16LY-075 AS4C512M16D4A-62BCN K4A8G165WC-BCRC
Package TFBGA-96 TFBGA-96 TFBGA-96 TFBGA-96 TFBGA-96 TFBGA-96 TFBGA-96
Brand ELIXIR/NANYA Nanya Technology Micron Technology Micron Technology Micron Technology Alliance Memory Samsung Electronics
Density 8 Gb 8 Gb 8 Gb 8 Gb 8 Gb 8 Gb 8 Gb
Data Rate 3200 MT/s 3200 MT/s 3200 MT/s 2400 MT/s 2400 MT/s 3200 MT/s 3200 MT/s
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
CAS Latency 22 22 22 17 17 22 22
Operating Temperature 0C to +95C 0C to +95C 0C to +95C 0C to +95C 0C to +95C 0C to +95C 0C to +95C
RoHS Compliant Compliant Compliant Compliant Compliant Compliant Compliant

주요 차별점

  • Higher data rate (3200 MT/s) compared to some alternatives (vs MT40A512M16JY-075E)
  • Same-brand drop-in alternative available (vs NT5AD512M16C4-HR)
  • RoHS compliant and lead-free (vs K4A8G165WC-BCRC)

설계 노트

For DDR4 routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ and DQS signals. Keep trace lengths matched within +/- 10 mils for each byte lane to ensure signal integrity. Use ground planes adjacent to signal layers to minimize crosstalk and EMI.

Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the device. Use a dedicated power plane for VDD and VDDQ to reduce noise. Ensure the 1.2V supply is stable and within +/- 5% tolerance as per JEDEC DDR4 specifications.

The E3AD8G16A4-HR has a maximum operating temperature of 95C. Ensure adequate airflow or heatsinking in high-ambient environments. The TFBGA-96 package has a thermal resistance of approximately 20C/W; calculate junction temperature to avoid exceeding the limit.

규정 준수 정보

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
무연
Yes
무할로겐
Unknown
분쟁 광물
Unknown

RoHS compliance indicated in AB Sunshine Electronics listing. Other compliance data not available.

데이터 검증일: 2026-08-20 — XAIPART 부품 엔지니어링 팀이 검증하고 관리한 데이터

관련 검색

E3AD8G16A4-HR datasheet E3AD8G16A4-HR price E3AD8G16A4-HR buy E3AD8G16A4-HR equivalent E3AD8G16A4-HR vs MT40A512M16TB-062E 8Gb DDR4 SDRAM 512Mx16 TFBGA-96 DDR4 DDR4 3200 MT/s memory E3AD8G16A4-HR in stock E3AD8G16A4-HR lead time

관련 부품 & 용어

ELIXIR/NANYA E3AD8G16A4-HR DDR4 SDRAM SDRAM Memory IC TFBGA-96 BGA Surface Mount 1.2V 3200 MT/s RoHS Lead-Free High-Performance Computing Networking Equipment Industrial Automation Automotive Infotainment Data Center Servers Consumer Electronics NT5AD512M16C4-HR MT40A512M16TB-062E MT40A512M16JY-075E MT40A512M16LY-075 AS4C512M16D4A-62BCN K4A8G165WC-BCRC
빠른 견적 RFQ
상세 정보를 모두 입력하십시오 — 영업팀이 24시간 이내에 답변드립니다
부품 번호 제조사 패키지 QTY 목표 가격 합계
합계: $0.00 USD
✓
견적이 제출되었습니다!

24시간 이내에 이메일로 답변드리겠습니다

1
RFQ 제출됨
2
견적 접수됨
3
주문 완료
4
결제
5
배송됨
6
배송 완료
RFQ 상세 보기