NT5CC256M16ER-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya
MPN: NT5CC256M16ER-EK ✓ فعالNT5CC256M16ER-EK نمای کلی
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in laptops, servers, and industrial applications where energy efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 933MHz clock speed, and support for 1.35V operation. The device also features programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. The TFBGA-96 package offers a compact footprint suitable for space-constrained designs.
Technically, the NT5CC256M16ER-EK uses an 8n-prefetch architecture, achieving high data rates with low power. It includes a mode register for configuration, and supports DLL (Delay-Locked Loop) for precise timing. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial PCs. Its low voltage and high density make it ideal for power-sensitive applications.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds.
جایگزین‌های drop-in برای NT5CC256M16ER-EK — همان پکیج، سازگار پین‌به‌پین. قطعات با پکیج متفاوت که نیاز به تغییر PCB دارند مستثنی هستند.
گونه‌ها در این سری
مدل‌های هم‌سری که جایگزین مستقیم هستند برای NT5CC256M16ER-EK (همان فرم‌فاکتور و فوت‌پرینت) — متفاوت در Supply Voltage, Data Rate, CAS Latency, Package, Density.
NT5CC256M16ER-EKI
✅ جایگزین مستقیمبرای قیمت تماس بگیرید
مشاهده دیتاشیت ←MT41K256M16TW-107:P
✅ جایگزین مستقیمبرای قیمت تماس بگیرید
مشاهده دیتاشیت ←AS4C256M16D3LC-10BCN
✅ جایگزین مستقیم📋 جایگزین مرجع (خارج از کاتالوگ)
IS43TR16512B-107MBL
✅ جایگزین مستقیم📋 جایگزین مرجع (خارج از کاتالوگ)
K4B4G1646E-HCK0
✅ جایگزین مستقیم ⚠️ مشخصات تأییدنشده📋 جایگزین مرجع (خارج از کاتالوگ)
H5TQ2G83AFR-PBC
✅ جایگزین مستقیم ⚠️ مشخصات تأییدنشده📋 جایگزین مرجع (خارج از کاتالوگ)
NT5CC256M16ER-EK حداکثر مقادیر مجاز و مشخصات الکتریکی
| نوع حافظه | DDR3L SDRAM |
| Density | 4 Gbit |
| سازمان | 256M x 16 |
| ولتاژ تغذیه | 1.35 V |
| نرخ داده | 933 MHz (DDR3L-1866) |
| بسته‌بندی | TFBGA-96 |
| دمای کاری | 0°C to +95°C |
| Burst Length | 8, 4 (with burst chop) |
| رابط | Parallel |
| نوع نصب | Surface Mount |
| وضعیت RoHS | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Yes |
| Write Leveling | Yes |
| Dynamic ODT | Yes |
| ZQ Calibration | Yes |
پیکربندی پین NT5CC256M16ER-EK
| پین A1 | VDD — Power supply |
| پین A2 | DQ0 — Data input/output 0 |
| پین A3 | DQ1 — Data input/output 1 |
| پین A4 | VSS — Ground |
| پین A5 | DQ2 — Data input/output 2 |
| پین A6 | DQ3 — Data input/output 3 |
| پین A7 | VDD — Power supply |
| پین A8 | DQ4 — Data input/output 4 |
| پین A9 | DQ5 — Data input/output 5 |
| پین A10 | VSS — Ground |
| پین A11 | DQ6 — Data input/output 6 |
| پین A12 | DQ7 — Data input/output 7 |
| پین B1 | VDD — Power supply |
| پین B2 | DQ8 — Data input/output 8 |
| پین B3 | DQ9 — Data input/output 9 |
| پین B4 | VSS — Ground |
| پین B5 | DQ10 — Data input/output 10 |
| پین B6 | DQ11 — Data input/output 11 |
| پین B7 | VDD — Power supply |
| پین B8 | DQ12 — Data input/output 12 |
| پین B9 | DQ13 — Data input/output 13 |
| پین B10 | VSS — Ground |
| پین B11 | DQ14 — Data input/output 14 |
| پین B12 | DQ15 — Data input/output 15 |
| پین C1 | VDD — Power supply |
| پین C2 | DQS0 — Data strobe 0 |
| پین C3 | DQS0# — Data strobe 0 complement |
| پین C4 | VSS — Ground |
| پین C5 | DQS1 — Data strobe 1 |
| پین C6 | DQS1# — Data strobe 1 complement |
| پین C7 | VDD — Power supply |
| پین C8 | DQS2 — Data strobe 2 |
| پین C9 | DQS2# — Data strobe 2 complement |
| پین C10 | VSS — Ground |
| پین C11 | DQS3 — Data strobe 3 |
| پین C12 | DQS3# — Data strobe 3 complement |
| پین D1 | VDD — Power supply |
| پین D2 | A0 — Address input 0 |
| پین D3 | A1 — Address input 1 |
| پین D4 | VSS — Ground |
| پین D5 | A2 — Address input 2 |
| پین D6 | A3 — Address input 3 |
| پین D7 | VDD — Power supply |
| پین D8 | A4 — Address input 4 |
| پین D9 | A5 — Address input 5 |
| پین D10 | VSS — Ground |
| پین D11 | A6 — Address input 6 |
| پین D12 | A7 — Address input 7 |
| پین E1 | VDD — Power supply |
| پین E2 | A8 — Address input 8 |
| پین E3 | A9 — Address input 9 |
| پین E4 | VSS — Ground |
| پین E5 | A10/AP — Address input 10 / Auto precharge |
| پین E6 | A11 — Address input 11 |
| پین E7 | VDD — Power supply |
| پین E8 | A12 — Address input 12 |
| پین E9 | A13 — Address input 13 |
| پین E10 | VSS — Ground |
| پین E11 | A14 — Address input 14 |
| پین E12 | A15 — Address input 15 |
| پین F1 | VDD — Power supply |
| پین F2 | BA0 — Bank address 0 |
| پین F3 | BA1 — Bank address 1 |
| پین F4 | VSS — Ground |
| پین F5 | BA2 — Bank address 2 |
| پین F6 | RAS# — Row address strobe |
| پین F7 | VDD — Power supply |
| پین F8 | CAS# — Column address strobe |
| پین F9 | WE# — Write enable |
| پین F10 | VSS — Ground |
| پین F11 | CS# — Chip select |
| پین F12 | CKE — Clock enable |
| پین G1 | VDD — Power supply |
| پین G2 | ODT — On-die termination |
| پین G3 | CK — Clock |
| پین G4 | VSS — Ground |
| پین G5 | CK# — Clock complement |
| پین G6 | RESET# — Reset |
| پین G7 | VDD — Power supply |
| پین G8 | DM0 — Data mask 0 |
| پین G9 | DM1 — Data mask 1 |
| پین G10 | VSS — Ground |
| پین G11 | DM2 — Data mask 2 |
| پین G12 | DM3 — Data mask 3 |
| پین H1 | VDD — Power supply |
| پین H2 | VDDQ — DQ power supply |
| پین H3 | VSSQ — DQ ground |
| پین H4 | VSS — Ground |
| پین H5 | VDDQ — DQ power supply |
| پین H6 | VSSQ — DQ ground |
| پین H7 | VDD — Power supply |
| پین H8 | VDDQ — DQ power supply |
| پین H9 | VSSQ — DQ ground |
| پین H10 | VSS — Ground |
| پین H11 | VDDQ — DQ power supply |
| پین H12 | VSSQ — DQ ground |
کاربردهای معمول
NT5CC256M16ER-EK مناسب است برای 6 کاربردs: Laptop Memory, Embedded Systems, Networking Equipment, Industrial PCs, Consumer Electronics, Automotive Infotainment.
Laptop Memory
The NT5CC256M16ER-EK is ideal for laptop memory modules due to its 1.35V low-voltage operation, which reduces power consumption and extends battery life. Its 4Gb density and 256Mx16 organization provide sufficient capacity for mainstream laptops. The 933MHz data rate ensures smooth multitasking and responsive performance. When used in SODIMM modules, it must be paired with a compatible memory controller that supports DDR3L. The low voltage also reduces heat generation, improving thermal management in thin and light laptops.
پیشنهادی
Embedded Systems
In embedded systems, the NT5CC256M16ER-EK provides high-density volatile storage for applications like industrial controllers, networking equipment, and medical devices. Its wide temperature range (0°C to +95°C) supports industrial environments. The 1.35V operation is compatible with low-power embedded processors. The device's auto self-refresh and write leveling features simplify system design. For reliable operation, ensure proper decoupling and follow the layout guidelines in the datasheet.
پیشنهادی
Networking Equipment
The NT5CC256M16ER-EK is suitable for networking equipment such as routers, switches, and firewalls, where high-bandwidth memory is required for packet buffering and routing tables. Its 933MHz data rate provides fast data throughput, and the 4Gb density allows large buffers. The low-voltage operation reduces power consumption in always-on network devices. The TFBGA-96 package is compact, enabling high-density PCB layouts. For optimal performance, use with a DDR3L controller that supports ECC if needed.
پیشنهادی
Industrial PCs
Industrial PCs require reliable memory that can operate in harsh environments. The NT5CC256M16ER-EK's 0°C to +95°C temperature range covers most industrial settings. Its 1.35V operation reduces power and heat, which is critical in sealed enclosures. The 4Gb density supports demanding industrial applications like machine vision and process control. The device's robust design includes features like auto self-refresh to maintain data integrity. When designing, consider using industrial-grade variants like the -EKI for extended temperature ranges.
پیشنهادی
Consumer Electronics
In consumer electronics such as smart TVs, set-top boxes, and gaming consoles, the NT5CC256M16ER-EK provides high-speed memory for multimedia processing. Its 933MHz data rate supports HD video streaming and gaming. The low-voltage operation is ideal for energy-efficient devices. The 4Gb density allows multiple applications to run simultaneously. The TFBGA-96 package is suitable for compact consumer devices. For best performance, pair with a processor that supports DDR3L-1866.
پیشنهادی
Automotive Infotainment
The NT5CC256M16ER-EK can be used in automotive infotainment systems, providing memory for navigation, audio, and video playback. Its 1.35V operation reduces power consumption in vehicles. The 0°C to +95°C temperature range is suitable for cabin environments. The 4Gb density supports complex infotainment software. However, for automotive-grade requirements, consider the -EKI variant with industrial temperature range. Ensure compliance with AEC-Q100 if required.
پیشنهادی
خلاصه محصولات پیشنهادی
داده‌های مرجع مهندسی برای NT5CC256M16ER-EK — مقایسه، راهنمای طراحی و اطلاعات انطباق.
راهنمای انتخاب
مقایسه با جایگزین‌ها
| پارامتر | این محصول | NT5CC256M16ER-EKI | MT41K256M16TW-107:P | AS4C256M16D3LC-10BCN | IS43TR16512B-107MBL | K4B4G1646E-HCK0 | H5TQ2G83AFR-PBC |
|---|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Alliance Memory | ISSI | Samsung Electronics | SK Hynix |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
تفاوت‌های کلیدی
- Low-voltage operation at 1.35V (در مقابلStandard DDR3 parts at 1.5V)
- Wide temperature range up to +95°C (در مقابلSome competitors limited to +85°C)
- High density 4Gb in 256Mx16 (در مقابلLower density parts like 2Gb)
یادداشت‌های طراحی
For high-speed DDR3L signals, maintain controlled impedance of 40-60 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Use ground planes beneath the memory area to reduce noise and ensure signal integrity.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the pins. Use a 10uF bulk capacitor on the power rail. The 1.35V supply must be stable and low-noise; consider a dedicated LDO or DC-DC converter with adequate load transient response.
The NT5CC256M16ER-EK operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The TFBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, consider the -EKI variant with wider temperature range.
اطلاعات انطباق
RoHS compliant per LCSC and JLCPCB listings. Lead-free per product description.
