BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon
Référence : BSC084P03NS3GATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.78 | $0,78 |
| 10 | $0.65 | $6,50 |
| 100 | $0.49 | $49,00 |
| 500 | $0.38 | $190,00 |
| 1 000 | $0.31 | $310,00 |
| 5 000 | $0.24 | $1 200,00 |
BSC084P03NS3GATMA1 Présentation
A P-channel power MOSFET is a voltage-controlled unipolar device in which the drain current flows when a negative gate-to-source voltage is applied. The P-channel variant is the polarity complement of an N-channel MOSFET; it is particularly useful in load-switch and high-side reverse-battery-protection circuits because it can be driven with the same ground-referenced logic that controls the upstream N-channel regulator, eliminating the need for a charge pump or bootstrap supply. Within the broader hierarchy, a P-channel MOSFET sits below discrete transistors, above power-management switch ICs, and inside the wider MOSFET > transistor > discrete semiconductor taxonomy.
The OptiMOS P3 technology combines a trench-gate structure with optimized cell pitch to deliver the lowest Rds(on) per unit area in this voltage class. Key differentiators include 6.1 mOhm Rds(on) at -10 V VGS, an industry-leading figure-of-merit (FOM = Rds(on) x Qg), 110 pF Coss for low switching loss, and 1.52 nF Crss for good dv/dt immunity. The 69 W power dissipation rating (Tc) allows sustained high-current operation when the die is properly heatsinked via the exposed pad.
Typical applications include load-switch management in notebook and tablet motherboards, high-side reverse-polarity protection in 12 V/24 V industrial systems, battery protection and OR-ing in Li-ion battery packs, synchronous rectification in buck converters, and motor-drive H-bridges where low-side switching requires a complementary P-channel device. The TDSON-8-5 footprint with exposed thermal pad is widely adopted in power-dense designs.
When designing with this device, ensure that the gate drive swing reaches at least -10 V to achieve the datasheet Rds(on). Place a gate-to-source resistor (typically 10 kOhm to 100 kOhm) close to the IC pins to prevent floating-gate turn-on, and use the exposed pad as the primary thermal path with multiple thermal vias to inner copper planes.
Alternatives de remplacement direct pour BSC084P03NS3GATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec BSC084P03NS3GATMA1 (même facteur de forme et même empreinte) — différant par Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), Power Dissipation (Tc).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
BSC060P03NS3EGATMA1
✅ Remplacement direct✓ En stock
$0.38 / unité
Voir la fiche technique →BSC076N06NS3GATMA1
✅ Remplacement direct✓ En stock
$0.65 / unité
Voir la fiche technique →BSC022N04LS6ATMA1
✅ Remplacement direct✓ En stock
$0.66 / unité
Voir la fiche technique →BSC0902NSIATMA1
✅ Remplacement direct✓ En stock
$0.32 / unité
Voir la fiche technique →BSP316PH6327XTSA1
✅ Remplacement direct✓ En stock
$0.21 / unité
Voir la fiche technique →BSZ0901NSIATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.34 / unité
Voir la fiche technique →BSC084P03NS3GATMA1 Valeurs maximales et caractéristiques électriques
| Polarity / Channel Type | P-Channel |
| Drain-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (Ta) | 14.9 A |
| Continuous Drain Current (Tc) | 78.6 A |
| Rds(on) max @ VGS = -10 V | 6.1 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | -1.7 V |
| Total Gate Charge (Qg) | 58 nC @ VGS = -10 V |
| Input Capacitance (Ciss) | 3.19 nF |
| Output Capacitance (Coss) | 110 pF |
| Reverse Transfer Capacitance (Crss) | 1.52 nF |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 69 W |
| Plage de température de fonctionnement | -55C to +150C |
| Boîtier | PG-TDSON-8-5 (SuperSO8 5x6) |
| Type de montage | Surface Mount |
| Technology Family | OptiMOS P3 |
| Statut RoHS | Compliant |
| Niveau MSL | 1 (unlimited) |
Configuration des broches de BSC084P03NS3GATMA1
| Broche 1 | GATE — Gate drive input (drive to -10V to fully enhance) |
| Broche 2 | SOURCE — Source connection (electrically tied to pins 3, 4, 5, 6, 7 and the exposed pad) |
| Broche 3 | SOURCE — Source connection |
| Broche 4 | SOURCE — Source connection |
| Broche 5 | SOURCE — Source connection |
| Broche 6 | SOURCE — Source connection |
| Broche 7 | SOURCE — Source connection |
| Broche 8 | DRAIN — Drain connection |
| Broche PAD | EP (Source) — Exposed thermal pad - electrically tied to SOURCE, must be soldered to PCB copper for thermal dissipation |
Zone de fonctionnement sûr (SOA) - BSC084P03NS3GATMA1
Applications typiques
BSC084P03NS3GATMA1 convient pour 7 applications: 12 V Load Switch (Notebook/Tablet), Reverse-Polarity Protection (24 V Industrial), Li-ion Battery Pack Protection, Synchronous Rectifier (Buck Converter), Motor Drive H-Bridge (Low Side), Hot-Swap / Inrush Limiting, USB-C VBUS Load Switch.
12 V Load Switch (Notebook/Tablet)
The BSC084P03NS3GATMA1 excels as a high-side load switch on 12 V rails inside notebook and tablet motherboards. Its P-channel polarity eliminates the charge pump typically required for N-channel high-side switches - a 3.3 V GPIO plus a small level shifter directly drives the gate, saving PCB area and cost. At continuous 5-8 A loads, the 6.1 mOhm Rds(on) dissipates only 0.2-0.5 W, well below the 2.5 W Ta rating without external heatsinking. The PG-TDSON-8-5 footprint with exposed pad handles transient inrush during plug-in events while keeping the BOM small.
Recommandé
Reverse-Polarity Protection (24 V Industrial)
The BSC084P03NS3GATMA1 is well suited for high-side reverse-polarity protection in 24 V industrial systems. Wired as a P-channel FET in series with the input rail, it blocks fault current within microseconds of a reversed connection, protecting downstream DC-DC converters, motor drivers, and PLC I/O. Its -30 V VDS comfortably handles 24 V nominal plus transient surge headroom, and the 6.1 mOhm Rds(on) keeps voltage drop below 50 mV even at 8 A continuous load. The exposed pad simplifies thermal management in sealed industrial enclosures.
Recommandé
Li-ion Battery Pack Protection
In multi-cell Li-ion battery packs the BSC084P03NS3GATMA1 serves as the high-side disconnect MOSFET, providing load-side overcurrent and short-circuit protection. The P-channel configuration simplifies gate drive because the source sits at pack-positive, allowing the battery protection IC to pull the gate to ground for turn-on with a single low-side driver. Its -30 V rating covers one cell stack plus transient margin, and the 78.6 A Tc current rating delivers ample headroom over typical 10-20 A discharge profiles. Pair with a dedicated fuel-gauge and protection IC.
Recommandé
Synchronous Rectifier (Buck Converter)
The BSC084P03NS3GATMA1 functions effectively as the low-side synchronous rectifier in buck converters up to 15-20 A, although it is a P-channel device, so the driver topology differs from standard N-channel low-side implementations. Its 58 nC total gate charge and 110 pF Coss minimize switching loss at 500 kHz-1 MHz switching frequencies, helping maintain high efficiency in 5 V to 1 V POL converters feeding processors and ASICs. The exposed thermal pad keeps junction temperature within limits during continuous rectification at full load.
Recommandé
Motor Drive H-Bridge (Low Side)
In low-voltage H-bridge motor drives the BSC084P03NS3GATMA1 handles low-side switching for brushed DC motors up to 30 V. Although P-channel devices are unconventional on the low side, the topology allows simplified gate drive without a bootstrap circuit, useful in low-cost fan, pump, and valve drivers. The 6.1 mOhm Rds(on) reduces conduction loss versus the small-signal MOSFETs typically used, improving thermal performance in continuous-duty applications like PC fans and appliance pumps.
Recommandé
Hot-Swap / Inrush Limiting
The BSC084P03NS3GATMA1 is a strong choice for hot-swap and inrush-current limiting in 12 V distribution systems such as RAID arrays, telecom cards, and PoE midspan injectors. Used as the high-side P-channel switch with controlled gate ramp-up, it limits the dI/dt when a capacitive load is connected, preventing connector arcing and backplane disturbance. Its 78.6 A Tc rating handles momentary inrush, while the 6.1 mOhm Rds(on) keeps steady-state voltage drop negligible. The exposed thermal pad absorbs short-duration overload events.
Recommandé
USB-C VBUS Load Switch
In USB-C Power Delivery designs the BSC084P03NS3GATMA1 acts as the VBUS load switch, providing source-to-sink isolation, current limiting, and fault protection. Its P-channel polarity aligns with VBUS high-side switching without charge-pump complexity, and the 6.1 mOhm Rds(on) minimizes voltage drop at 5 A Type-C current. The PG-TDSON-8-5 footprint fits underneath small Type-C connectors, while the exposed pad dissipates heat during continuous 5 V/3 A delivery.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour BSC084P03NS3GATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | BSC060P03NS3EGATMA1 | BSC076N06NS3GATMA1 | BSC022N04LS6ATMA1 | BSC0902NSIATMA1 | BSP316PH6327XTSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8 (SOT-8) - same family footprint |
| Polarity | P-Channel | P-Channel | N-Channel | N-Channel | N-Channel | P-Channel |
| VDS max | -30 V | -30 V | -60 V | -40 V | -30 V | -30 V |
| Rds(on) max @ 10V | 6.1 mOhm | 6.0 mOhm | 7.6 mOhm | 2.2 mOhm | 9.0 mOhm | 45 mOhm |
| Continuous Drain Current (Tc) | 78.6 A | 80 A | 70 A | 100 A | 60 A | 21 A |
| Gate Charge (Qg) | 58 nC | 55 nC | 75 nC | 40 nC | 65 nC | 12 nC |
| Technology Family | OptiMOS P3 | OptiMOS P3 | OptiMOS 3 | OptiMOS 6 | OptiMOS 3 | SIPMOS |
| AEC-Q101 Automotive Qualified | No (Industrial grade) | Yes | Yes | Yes | Yes | No |
Principaux différenciateurs
- P-channel polarity eliminates need for charge pump in high-side switches (vs BSC0902NSIATMA1 (N-channel sibling))
- Lowest Rds(on) in OptiMOS P3 P-channel -30V family (vs BSP316PH6327XTSA1 (older SIPMOS P-channel -30V))
- Higher peak current handling vs general-purpose N-channel cousins (vs BSC076N06NS3GATMA1 (-60V N-channel sibling))
- Surface-mount PG-TDSON-8-5 with exposed thermal pad (vs IRF4905STRLPBF (TO-220AB through-hole))
Notes de conception
Estimated: At VGS=-10V with continuous 14.9 A (Ta) and 78.6 A (Tc) operation, the 6.1 mOhm Rds(on) dissipates approximately 1.4 W at 15 A or 37.6 W at 78 A on the die. The PG-TDSON-8-5 package has a typical theta_JC of approximately 1.8 C/W, which keeps the junction below 150 C if the case is held at 80 C or lower. Always solder the exposed thermal pad to a copper pour with multiple thermal vias to inner planes; without this path the part will thermally throttle at much lower currents than the datasheet rating suggests. Verify with a thermal camera in worst-case conditions.
Place a 10 kOhm to 100 kOhm gate-to-source pull-down resistor close to the gate pin (within 5 mm) to prevent unintended turn-on from Miller coupling during drain voltage transitions. Route the gate trace away from the drain node to minimize parasitic dv/dt coupling through Crss (1.52 nF). The source pins and exposed pad should be tied to a single large copper pour that serves as both electrical and thermal conduction; star-ground topology is not required for the source since all source pins are internally bonded.
Common pitfalls: (a) Driving the gate with only -3.3V from a low-voltage GPIO without a level shifter - this leaves the FET in the linear region and may exceed SOA during turn-on. (b) Forgetting the body diode conduction path during dead-time transitions in synchronous rectification, which can cause voltage overshoot on the drain node. (c) Exceeding the -30V VDS rating during hot-plug or load-dump transients - add a TVS diode or Zener clamp if the application sees inductive kickback above 25 V. (d) Using too-small a gate-drive resistor (below 4.7 Ohm) without a series ferrite bead, causing ringing that may exceed VGS max of +/-20V.
Informations de conformité
RoHS and REACH compliant per Infineon product page. Industrial grade - not AEC-Q100/101 qualified; for automotive applications use BSC060P03NS3EGATMA1 (AEC-Q101). Halogen-free per JEDEC JS709. Lead-free reflow profile per J-STD-020.
