K4A8G085WB - 8Gb B-die DDR4 SDRAM 1Gx8 | Samsung
Référence : K4A8G085WB ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $6.48 | $6,48 |
| 10 | $6.15 | $61,50 |
| 100 | $5.8 | $580,00 |
| 500 | $5.5 | $2 750,00 |
| 1 000 | $5.2 | $5 200,00 |
K4A8G085WB Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of DDR DRAM, defined by the JEDEC DDR4 standard. It succeeded DDR3 by lowering operating voltage to 1.2V, increasing bank counts, and raising transfer rates, making it the dominant main-memory technology in servers, desktops, and industrial systems. Within the memory hierarchy, DDR4 SDRAM sits in the volatile main-memory tier between CPU caches and non-volatile storage.
Key features of the K4A8G085WB include its 8Gbit density based on Samsung's B-die process, a x8 (1G x 8) organization suited to designs requiring narrow-width, deep-addressing configurations, and the low 1.2V core supply that reduces system power consumption versus DDR3. The FBGA (Fine-Pitch Ball Grid Array) package provides excellent signal integrity and a compact footprint for high-density memory module and solder-down designs.
Architecturally, the B-die DDR4 generation supports DLL-enabled mode operation as described in the Samsung datasheet; the datasheet notes it is an abstract of the full DDR4 specification, with common features covered in Samsung's 'DDR4 SDRAM Device Operation & Timing Diagram' document. Designers must configure the memory controller for DDR4 bank groups and verify speed-grade timing parameters for the specific speed/temp suffix (e.g., -BCRC, -BIRC, -BCTD).
Typical applications include server and desktop DIMMs, networking equipment memory subsystems, industrial embedded computing, and high-performance computing platforms requiring high bandwidth at low operating voltage.
When designing with this component, verify the exact speed-grade and temperature suffix on the full MPN (K4A8G085WB-XXRX format), as timing parameters and operating ranges differ between grades. Memory controller address mapping and bank configuration must match the x8 organization.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour K4A8G085WB — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4A8G085WB (même facteur de forme et même empreinte) — différant par Package, Burst Length, Data Rate, Operating Temperature, Interface.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4A8G085WB-BCRC
✅ Remplacement direct✓ En stock
$6.8 / unité
Voir la fiche technique →K4A8G085WB-BCPB
✅ Remplacement direct✓ En stock
$13.7813 / unité
Voir la fiche technique →K4A8G085WB-BIRC
✅ Remplacement direct✓ En stock
$6.5625 / unité
Voir la fiche technique →K4A8G085WB-BITD
✅ Remplacement direct✓ En stock
$3.8 / unité
Voir la fiche technique →K4A8G085WB-BCTD
✅ Remplacement direct✓ En stock
$7.5 / unité
Voir la fiche technique →K4A8G085WC-BCTD
✅ Remplacement direct✓ En stock
$50.85 / unité
Voir la fiche technique →K4A8G085WC-BIWE
✅ Remplacement direct✓ En stock
$6.29 / unité
Voir la fiche technique →K4A8G085WB Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM (B-die) |
| Density | 8 Gbit |
| Organisation de la mémoire | 1G x 8 |
| Tension d'alimentation | 1.2 V |
| Boîtier | 78-pin FBGA |
| Type de montage | Surface Mount |
| Operating Mode | DLL Enabled mode (per datasheet) |
| Speed Grade Suffixes | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) |
Guide de configuration des broches du K4A8G085WB 78-pin fbga
Configuration des broches du K4A8G085WB (boîtier 78-pin fbga). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K4A8G085WB.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K4A8G085WB convient pour 6 applications: Server and Data Center DIMMs, Networking and Telecom Equipment, Industrial Embedded Computing, High-Performance Computing Accelerators, Desktop PC and Consumer Motherboards, Automotive and Rugged Infotainment Memory.
Server and Data Center DIMMs
Server main memory is the primary application for 8Gb B-die DDR4 SDRAM. The K4A8G085WB's 8Gbit density in a x8 organization is the classic building block for registered and load-reduced DIMMs, where 9 or 18 x8 chips create single-rank or dual-rank 8GB/16GB modules. The 1.2V DDR4 interface with fly-by termination topology keeps per-rail power low at high capacities, and the FBGA-78 package supports the dense stacking required on standard 288-pin RDIMM and LRDIMM form factors. The B-die silicon is widely qualified across server platforms; designers must configure the memory controller (RCD) for the device's speed grade and bank-group timing, and program SPD data to match the installed grade.
Recommandé
Networking and Telecom Equipment
Switches, routers, and baseband cards use solder-down DDR4 as deep-packet-buffer and control-plane memory. The K4A8G085WB fits these designs because its x8 organization matches network processor and FPGA memory controllers that expose 8-, 16-, or 32-bit DDR4 interfaces, allowing 1-4 chips per controller channel. The 1.2V supply simplifies power-tree design in telecom chassis where VDDQ rails are already provisioned, and DLL-enabled operation delivers stable timing across the industrial card temperature range when the -BIxx industrial grades are selected. Layout should follow short, length-matched fly-by address/command routing with on-die termination enabled to maintain signal integrity on high-layer-count boards.
Recommandé
Industrial Embedded Computing
Industrial PCs, machine-vision controllers, and edge AI gateways require DRAM capacity and bandwidth with long-term availability. The K4A8G085WB in industrial grade (-BIRC, -BITD) supports these platforms, soldered directly beside x86 or ARM SoCs with integrated DDR4 controllers. The 8Gb density allows 4GB-8GB system memory with only 4-8 components, reducing BOM line count versus 4Gb alternatives, and the FBGA-78 footprint reflows on standard SMT lines. Designers should select the industrial temperature suffix, provide the 1.2V VDD and 0.6V VTT rails with proper decoupling, and validate controller timing across temperature, since DRAM refresh and AC timing parameters must hold over the -40C to +85C (or wider) industrial range.
Recommandé
High-Performance Computing Accelerators
GPGPU accelerator cards, FPGA compute boards, and HPC modules use solder-down DDR4 as local scratchpad and workspace memory alongside HBM or as the main system memory pool. The K4A8G085WB's high 8Gb per-chip density lets accelerator designers reach 16-32GB local memory with compact x8 channel groupings, and the DDR4 interface achieves multi-Gbps transfer rates per pin in higher speed grades, delivering the streaming bandwidth large matrix workloads demand. XAIPART cross-reference data notes this Samsung DDR4 portfolio is intended for high-bandwidth, low-operating-voltage computing platforms. Multi-rank designs should use balanced loading per chip-select and verify signal-integrity margins at the target data rate with IBIS models.
Recommandé
Desktop PC and Consumer Motherboards
Consumer desktop platforms use unbuffered DIMMs built from 8Gb x8 DDR4 chips; the K4A8G085WB B-die has become well known in the enthusiast community for its overclocking characteristics, though it is specified per Samsung's JEDEC DDR4 datasheet in standard DLL-enabled operation. A 16GB unbuffered UDIMM uses sixteen 8Gb x8 devices in single- or dual-rank topology. The 1.2V rail is provided directly from the motherboard VDDQ regulator, and the FBGA-78 packages reflow onto the module PCB in one pass. Consumer builds typically select commercial grades (-BCxx); OEMs must program SPD EEPROM data with the installed device's timings so the BIOS trains the memory controller correctly.
Recommandé
Automotive and Rugged Infotainment Memory
Automotive infotainment, telematics, and ADAS domain controllers solder down DDR4 for navigation-map buffers and camera-frame stores. The K4A8G085WB family, using the industrial/wide-temperature -BI grades suited to automotive cabin and near-engine environments after board-level qualification, provides the 4-8GB working memory these SoCs require with a proven 1.2V DDR4 interface. Solder-down FBGA mounting withstands vibration better than socketed modules, a key advantage in vehicles. Designs should implement full DDR4 controller training, temperature-compensated refresh, and conformal-coated layout for harsh environments. Note this standard-grade part is not AEC-Q100 qualified by default; confirm the specific grade's automotive qualification status with Samsung for safety-relevant systems.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4A8G085WB — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4A8G085WB-BCRC | K4A8G085WB-BIRC | K4A8G085WC-BCTD | K4A8G085WC-BIWE |
|---|---|---|---|---|---|
| Package | 78-pin FBGA | 78-pin FBGA - same | 78-pin FBGA - same | 78-pin FBGA - same | 78-pin FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Temperature Grade | Depends on suffix | Commercial | Industrial | Commercial | Industrial wide-temp |
| Die Revision | B-die | B-die | B-die | C-die (next rev) | C-die (next rev) |
Principaux différenciateurs
- 8Gb B-die density halves component count vs 4Gb parts (vs K4A4G085WD-BCRC)
- Industrial grade availability with in-stock distribution (vs K4A8G085WB-BCRC)
- Same footprint as next-revision C-die parts eases migration (vs K4A8G085WC-BCTD)
Notes de conception
The 78-pin FBGA fanout is the hardest part of a DDR4 solder-down layout. Use via-in-pad (filled and capped) or dog-bone escape routing on the outer ball rows, and plan layer stackup so each DQ byte lane (8 DQ + DQS/DM) has a dedicated inner-layer pair. Keep address/command on fly-by topology with per-DIMM-style series termination. For x8 parts, DQS is a single differential pair (UDQS/UDQS# plus LDQS/LDQS# for x16 - here x8 uses one pair), so length-match DQS to its DQ byte within tight skew budgets.
Provide three rails: 1.2V VDD, 1.2V VDDQ, and 0.6V VTT termination rail. Estimated: each x8 DDR4 chip can draw roughly 200-400 mA from VDDQ at speed depending on grade and activity, so size VTT regulators for the total termination current across all chips (typically up to ~0.5A per chip transient). Place bulk capacitance near each device group and high-frequency ceramic caps inside the FBGA ball field. VTT requires a low-impedance split plane - do not share it with other noisy loads.
The most frequent error is ordering by truncated MPN. The suffix encodes speed grade and temperature (-BCRC vs -BIRC vs -BCTD differ in data rate and/or operating range), and C-die parts (K4A8G085WC) may carry timing differences versus B-die per public documentation. Always verify the full suffix, cross-check controller timing at the target data rate, and program SPD/strap settings to the actual device. Substituting a commercial grade into an industrial design without thermal validation risks field failures.
Informations de conformité
Compliance status not stated in provided web data; consult Samsung product pages or request compliance certificates from Samsung Semiconductor.
