K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 | Samsung | FBGA-78
Référence : K4A8G085WB-BCTD ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $10.66 | $10,66 |
| 10 | $9.85 | $98,50 |
| 100 | $8.95 | $895,00 |
| 500 | $8.2 | $4 100,00 |
| 1 000 | $7.5 | $7 500,00 |
K4A8G085WB-BCTD Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) and features higher density and improved signal integrity, making it the industry standard for modern servers, desktops, and embedded applications. DDR4 is part of the memory hierarchy, sitting between the CPU and storage, providing fast temporary data storage for active processes.
Key features include a burst length of 8 (BL8), on-die termination (ODT) for improved signal integrity, ZQ calibration for output driver impedance matching, and a temperature range of 0°C to +95°C (TC). The device supports auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check) for data integrity, and dynamic on-chip termination. These features enable reliable operation in high-speed, high-density memory systems.
Technically, the K4A8G085WB-BCTD utilizes Samsung's advanced B-die process technology, which offers lower latency and better overclocking headroom compared to other die revisions. The 1G x 8 organization is ideal for systems requiring byte-wide access, such as ECC modules and embedded processors. The FBGA-78 package provides excellent thermal and electrical performance, with a JESD-30 code of R-PBGA-B78.
Typical applications include high-performance computing (HPC), servers, networking equipment, and industrial embedded systems. Its high density and speed make it suitable for memory modules (DIMMs), solid-state drives (SSDs) as cache, and FPGA-based designs requiring large memory bandwidth.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.2V supply and a reference voltage (VREF) for optimal operation.
Alternatives de remplacement direct pour K4A8G085WB-BCTD — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4A8G085WB-BCTD (même facteur de forme et même empreinte) — différant par Data Rate, Package, Operating Temperature, Burst Length, Density.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4A8G085WC-BCTD
✅ Remplacement direct✓ En stock
$50.85 / unité
Voir la fiche technique →K4A8G085WB-BIWE
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →K4A8G085WB-BITD
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$3.8 / unité
Voir la fiche technique →K4A8G085WB-BCRC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.8 / unité
Voir la fiche technique →MT40A1G8SA-062E
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.05 / unité
Voir la fiche technique →H5AN8G6NDJR
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$35 / unité
Voir la fiche technique →K4A8G085WB-BCTD Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Taille de mémoire | 8 Gb (1G x 8) |
| Tension d'alimentation | 1.2 V |
| Débit de données | 3200 Mbps (PC4-25600) |
| Speed Bin | CL22-22-22 |
| Boîtier | FBGA-78 (TFBGA) |
| Température de fonctionnement | 0°C to +95°C (TC) |
| Burst Length | 8 (BL8) |
| On-Die Termination | Yes (ODT) |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| CRC Function | Yes |
| Dynamic On-Chip Termination | Yes |
| Data Mask Function | Yes |
| JESD-30 Code | R-PBGA-B78 |
| Number of Terminals | 78 |
| Statut RoHS | Compliant |
Configuration des broches de K4A8G085WB-BCTD
| Broche A1 | VDD — Power supply (1.2V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — Power supply for output buffers |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — Ground for output buffers |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
| Broche E1 | DM — Data mask |
| Broche E2 | DQS_t — Data strobe (true) |
| Broche E3 | DQS_c — Data strobe (complement) |
| Broche F1 | VDD — Power supply |
| Broche F2 | VSS — Ground |
| Broche F3 | CK_t — Clock (true) |
| Broche G1 | CK_c — Clock (complement) |
| Broche G2 | CKE — Clock enable |
| Broche G3 | CS_n — Chip select (active low) |
| Broche H1 | ODT — On-die termination |
| Broche H2 | A0 — Address input 0 |
| Broche H3 | A1 — Address input 1 |
| Broche J1 | A2 — Address input 2 |
| Broche J2 | A3 — Address input 3 |
| Broche J3 | A4 — Address input 4 |
| Broche K1 | A5 — Address input 5 |
| Broche K2 | A6 — Address input 6 |
| Broche K3 | A7 — Address input 7 |
| Broche L1 | A8 — Address input 8 |
| Broche L2 | A9 — Address input 9 |
| Broche L3 | A10/AP — Address input 10 / auto precharge |
| Broche M1 | A11 — Address input 11 |
| Broche M2 | A12/BC_n — Address input 12 / burst chop |
| Broche M3 | A13 — Address input 13 |
| Broche N1 | A14 — Address input 14 |
| Broche N2 | A15 — Address input 15 |
| Broche N3 | A16 — Address input 16 |
| Broche P1 | BA0 — Bank address 0 |
| Broche P2 | BA1 — Bank address 1 |
| Broche P3 | BA2 — Bank address 2 |
| Broche R1 | RAS_n — Row address strobe (active low) |
| Broche R2 | CAS_n — Column address strobe (active low) |
| Broche R3 | WE_n — Write enable (active low) |
| Broche T1 | RESET_n — Reset (active low) |
| Broche T2 | VDD — Power supply |
| Broche T3 | VSS — Ground |
Applications typiques
K4A8G085WB-BCTD convient pour 6 applications: High-Performance Computing (HPC), Networking Equipment, Embedded Systems, Data Center Servers, Gaming and Consumer PCs, Industrial Automation.
High-Performance Computing (HPC)
The K4A8G085WB-BCTD's 3200 Mbps data rate and 8Gb density make it ideal for HPC systems requiring high memory bandwidth. Its low 1.2V operation reduces power consumption in large-scale clusters. The B-die's low latency enhances performance in compute-intensive workloads. When used in DIMMs, it supports error correction and reliability features, ensuring stable operation in data centers.
Recommandé
Networking Equipment
In routers and switches, the K4A8G085WB-BCTD provides fast packet buffering and routing table storage. Its 1G x 8 organization is suitable for byte-addressable applications, and the high data rate ensures low latency in data forwarding. The FBGA-78 package allows compact board designs, and the wide temperature range supports industrial networking environments. The device's CRC function enhances data integrity in high-speed links.
Recommandé
Embedded Systems
The K4A8G085WB-BCTD is well-suited for embedded systems requiring large memory capacity in a small footprint. Its 8Gb density allows running complex applications without external storage, and the 1.2V supply reduces power for battery-operated devices. The FBGA-78 package is ideal for space-constrained PCBs, and the device's auto precharge and ODT features simplify memory controller design. It operates reliably in the 0°C to +95°C range, covering most industrial applications.
Recommandé
Data Center Servers
In servers, the K4A8G085WB-BCTD is used in RDIMMs and LRDIMMs to provide large memory pools for virtualization and cloud computing. Its high density and speed enable efficient multitasking, while the low voltage reduces total cost of ownership. The device's CRC and ECC support (when paired with a controller) ensure data reliability. The B-die's performance characteristics are favored for latency-sensitive applications like database transactions.
Recommandé
Gaming and Consumer PCs
The K4A8G085WB-BCTD is popular in gaming PCs and high-end consumer systems due to its B-die's overclocking potential. It supports high data rates for smooth gameplay and fast application loading. The 1.2V operation keeps thermals manageable, and the FBGA-78 package is compatible with standard DIMM designs. Enthusiasts often choose this part for its low latency and stability at high frequencies.
Recommandé
Industrial Automation
In industrial controllers and PLCs, the K4A8G085WB-BCTD provides reliable memory for real-time processing and data logging. Its wide temperature range and robust design ensure operation in harsh environments. The device's low power consumption is beneficial for systems with limited cooling. The 1G x 8 organization is compatible with many industrial SoCs, and the FBGA-78 package offers good thermal dissipation. The CRC function helps maintain data integrity in noisy industrial settings.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4A8G085WB-BCTD — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4A8G085WC-BCTD | K4A8G085WB-BIWE | MT40A1G8SA-062E | H5AN8G6NDJR |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 | FBGA-78 | FBGA-78 | FBGA-78 |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Principaux différenciateurs
- Samsung B-die for superior overclocking (vs K4A8G085WC-BCTD)
- High data rate of 3200 Mbps (vs MT40A1G8SA-062E)
- Proven compatibility with major platforms (vs H5AN8G6NDJR)
Notes de conception
Ensure proper decoupling capacitors (0.1uF and 1uF) are placed close to the VDD and VDDQ pins to minimize power supply noise. Follow the layout guidelines in the Samsung datasheet for DDR4 routing, including matched trace lengths for DQ, DQS, and address/control signals to maintain signal integrity at 3200 Mbps.
The K4A8G085WB-BCTD operates up to +95°C, but for high-density modules, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The FBGA-78 package has a thermal resistance that benefits from a solid ground plane and thermal vias under the package. Monitor the temperature in high-ambient environments.
Do not exceed the absolute maximum ratings, especially VDD and VDDQ. Ensure the memory controller is configured for the correct speed bin (CL22-22-22) and data rate (3200 Mbps). Incorrect termination settings can cause signal integrity issues; use the ODT and ZQ calibration features as specified in the datasheet.
Informations de conformité
RoHS compliance is assumed based on Samsung's standard compliance for DDR4 products, but not explicitly stated in the provided data. Other compliance statuses are unknown.
