K4A8G085WB-BITD - 8Gb DDR4 SDRAM 2666Mbps | Samsung
Référence : K4A8G085WB-BITD ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $5.15 | $5,15 |
| 10 | $4.9 | $49,00 |
| 100 | $4.5 | $450,00 |
| 500 | $4.1 | $2 050,00 |
| 1 000 | $3.8 | $3 800,00 |
K4A8G085WB-BITD Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the throughput of DDR3. It operates at a lower voltage of 1.2V, reducing power consumption compared to previous generations. DDR4 is the industry standard for modern computing, offering higher density and speed for servers, desktops, and mobile devices.
Key features include a density of 8Gb, a 1G x 8 organization, and a speed grade of 2666 Mbps (PC4-2133). The device supports a supply voltage of 1.2V and operates over a temperature range of -40°C to +95°C, making it suitable for industrial applications. The 78FBGA package provides a compact footprint with excellent thermal and electrical performance.
The K4A8G085WB-BITD utilizes Samsung's advanced B-die process technology, which is renowned for its tight timing margins and high-frequency stability. This makes it a preferred choice for enthusiasts and system integrators seeking maximum memory performance. The device includes on-die termination (ODT) and programmable read/write latency for signal integrity optimization.
Typical applications include high-performance desktop and laptop memory modules, server DIMMs, networking equipment, and embedded systems requiring high bandwidth and reliability. Its industrial temperature range and robust design also make it suitable for automotive and IoT applications.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.2V supply and careful routing of the high-speed data lines.
Alternatives de remplacement direct pour K4A8G085WB-BITD — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4A8G085WB-BITD (même facteur de forme et même empreinte) — différant par Package, Data Rate, Operating Temperature, Supply Voltage, Density.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4A8G085WB-BIWE
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →K4A8G085WB-BCTD
✅ Remplacement direct✓ En stock
$7.5 / unité
Voir la fiche technique →K4A8G085WB-BICH
✅ Remplacement direct✓ En stock
$4.96 / unité
Voir la fiche technique →K4A8G085WB-BCRC
✅ Remplacement direct✓ En stock
$6.8 / unité
Voir la fiche technique →K4A8G085WB-BIWE
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →K4A8G085WB-BCTD
✅ Remplacement direct✓ En stock
$7.5 / unité
Voir la fiche technique →K4A8G085WB-BICH
✅ Remplacement direct✓ En stock
$4.96 / unité
Voir la fiche technique →K4A8G085WB-BCRC
✅ Remplacement direct✓ En stock
$6.8 / unité
Voir la fiche technique →K4A8G085WB-BITD Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gb |
| Organisation de la mémoire | 1G x 8 |
| Débit de données | 2666 Mbps |
| Tension d'alimentation | 1.2 V |
| Température de fonctionnement | -40°C to +95°C |
| Boîtier | 78FBGA |
| Type de montage | Surface Mount |
| Nombre de broches | 78 |
| Interface | Parallel |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
Configuration des broches de K4A8G085WB-BITD
| Broche A1 | VDD — Power supply |
| Broche A2 | VSS — Ground |
| Broche B1 | DQ0 — Data input/output 0 |
| Broche B2 | DQ1 — Data input/output 1 |
| Broche C1 | DQ2 — Data input/output 2 |
| Broche C2 | DQ3 — Data input/output 3 |
| Broche D1 | DQ4 — Data input/output 4 |
| Broche D2 | DQ5 — Data input/output 5 |
| Broche E1 | DQ6 — Data input/output 6 |
| Broche E2 | DQ7 — Data input/output 7 |
| Broche F1 | A0 — Address input 0 |
| Broche F2 | A1 — Address input 1 |
Applications typiques
K4A8G085WB-BITD convient pour 6 applications: High-Performance Computing, Networking Equipment, Automotive Infotainment, Industrial Automation, Consumer Electronics, Embedded Systems.
High-Performance Computing
The K4A8G085WB-BITD delivers 2666 Mbps data rate and 8Gb density, making it ideal for HPC systems requiring high bandwidth and low latency. Its B-die architecture ensures stable operation at high frequencies, supporting demanding workloads like scientific simulations and data analytics. The 1.2V operation reduces power consumption, crucial for large-scale clusters.
Recommandé
Networking Equipment
In routers and switches, the K4A8G085WB-BITD provides high-speed packet buffering and forwarding. Its 2666 Mbps data rate ensures fast data throughput, while the industrial temperature range (-40°C to +95°C) allows operation in outdoor or uncontrolled environments. The 78FBGA package enables compact PCB designs for space-constrained networking hardware.
Recommandé
Automotive Infotainment
The K4A8G085WB-BITD supports automotive infotainment systems with its high bandwidth and reliability. It operates over -40°C to +95°C, meeting automotive temperature requirements. The 1.2V supply reduces heat generation, important for in-cabin electronics. Its 8Gb density allows storage of navigation maps and multimedia data.
Recommandé
Industrial Automation
For industrial controllers and PLCs, the K4A8G085WB-BITD offers reliable memory with extended temperature range. Its 2666 Mbps speed ensures fast data processing for real-time control. The B-die design provides low latency, critical for deterministic operations. The 78FBGA package is robust for harsh environments.
Recommandé
Consumer Electronics
In high-end desktops and gaming PCs, the K4A8G085WB-BITD is used in memory modules for its overclocking potential. The B-die is renowned for tight timings and high frequency stability, appealing to enthusiasts. Its 8Gb density allows large memory capacities, and the 1.2V operation is energy-efficient.
Recommandé
Embedded Systems
The K4A8G085WB-BITD is suitable for embedded systems requiring high-density memory with industrial temperature support. Its 8Gb capacity and 2666 Mbps speed enable complex applications like real-time data acquisition. The 78FBGA package is ideal for compact embedded boards, and the low power consumption extends battery life in portable devices.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4A8G085WB-BITD — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4A8G085WB-BIWE | K4A8G085WB-BCTD | K4A8G085WB-BICH |
|---|---|---|---|---|
| Package | 78FBGA | 78FBGA | 78FBGA | 78FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
Principaux différenciateurs
- B-die architecture for overclocking (vs K4A8G085WB-BCTD)
- Industrial temperature range (vs K4A8G085WB-BIWE)
- Wide availability (vs K4A8G085WB-BICH)
Notes de conception
Ensure proper decoupling capacitors (0.1uF and 1uF) are placed close to the VDD and VDDQ pins to minimize power supply noise. Follow the layout guidelines in the Samsung datasheet for high-speed signal routing, including impedance matching and length matching for DQ and DQS lines.
The K4A8G085WB-BITD operates over -40°C to +95°C. For high-density modules, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The 78FBGA package has a thermal resistance that should be considered in the design.
Use on-die termination (ODT) settings as recommended in the datasheet to improve signal integrity on the data bus. Proper termination reduces reflections and crosstalk, especially at 2666 Mbps. Simulate the memory channel to verify timing margins.
Informations de conformité
RoHS compliant per Samsung product page. Not AEC-Q100 qualified as it is a memory IC.
