K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
Référence : K4A8G085WB-BCRC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $9.18 | $9,18 |
| 10 | $8.5 | $85,00 |
| 100 | $7.8 | $780,00 |
| 500 | $7.2 | $3 600,00 |
| 1 000 | $6.8 | $6 800,00 |
K4A8G085WB-BCRC Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption by approximately 25%. DDR4 is the industry standard for modern servers, desktops, laptops, and high-performance embedded systems, offering higher density and speed than its predecessors.
Key features of the K4A8G085WB-BCRC include a density of 8Gb, organization of 1G x 8, and a speed grade of 2400 Mbps. It supports a temperature range of 0°C to 85°C, making it suitable for commercial applications. The device uses a 78-ball FBGA package, which provides excellent thermal and electrical performance. It also features on-die termination (ODT), programmable read/write latency, and auto-refresh and self-refresh modes for power saving.
Technically, the K4A8G085WB-BCRC is built on Samsung's advanced B-die process technology, which is known for its high speed and low latency. It supports a burst length of 8 and 4, and includes a built-in temperature sensor for thermal management. The device is designed to meet JEDEC DDR4 standards, ensuring compatibility with a wide range of memory controllers.
Typical applications include high-performance computing, servers, networking equipment, and industrial embedded systems. Its high density and speed make it ideal for memory-intensive tasks such as data analytics, virtualization, and real-time processing. The low operating voltage also makes it suitable for power-sensitive designs.
When designing with this component, ensure proper signal integrity by following the layout guidelines in the datasheet, including controlled impedance traces and proper decoupling. The device requires a 1.2V VDD and 2.5V VPP supply, and supports a data mask for byte-wise write operations.
Alternatives de remplacement direct pour K4A8G085WB-BCRC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4A8G085WB-BCRC (même facteur de forme et même empreinte) — différant par Package, Data Rate, Operating Temperature, Supply Voltage, Burst Length.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4A8G085WB-BCPB
✅ Remplacement direct✓ En stock
$13.7813 / unité
Voir la fiche technique →K4A8G085WB-BIWE
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →K4A8G085WB-BICH
✅ Remplacement direct✓ En stock
$4.96 / unité
Voir la fiche technique →K4A8G045WB-BCRC
✅ Remplacement direct✓ En stock
$2.95 / unité
Voir la fiche technique →K4A8G165WB-BCTD
✅ Remplacement direct✓ En stock
$37 / unité
Voir la fiche technique →H5AN8G6NDJR-XNC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$55.6818 / unité
Voir la fiche technique →MT40A512M16JY-07EAIT:B
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$8.1 / unité
Voir la fiche technique →K4A8G085WB-BCRC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gb |
| Organisation de la mémoire | 1G x 8 |
| Débit de données | 2400 Mbps |
| Tension d'alimentation | 1.2 V |
| Température de fonctionnement | 0°C to 85°C |
| Boîtier | 78-ball FBGA |
| Number of Terminals | 78 |
| Refresh Cycles | 8192 |
| Access Time | 0.175 ns |
| Technology | CMOS |
| Burst Length | 8 and 4 |
| On-Die Termination | Yes |
| Auto-Refresh | Yes |
| Self-Refresh | Yes |
| RoHS | Compliant |
Configuration des broches de K4A8G085WB-BCRC
| Broche A1 | VDD — Power supply (1.2V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDD — Power supply (1.2V) |
| Broche B1 | VPP — Word line boost (2.5V) |
| Broche B2 | DQ4 — Data input/output 4 |
| Broche B3 | DQ5 — Data input/output 5 |
| Broche B4 | VSS — Ground |
| Broche B5 | DQ6 — Data input/output 6 |
| Broche B6 | DQ7 — Data input/output 7 |
| Broche B7 | VDD — Power supply (1.2V) |
| Broche C1 | VSS — Ground |
| Broche C2 | DQS_t — Data strobe (true) |
| Broche C3 | DQS_c — Data strobe (complement) |
| Broche C4 | VSS — Ground |
| Broche C5 | DM — Data mask |
| Broche C6 | VSS — Ground |
| Broche C7 | VDD — Power supply (1.2V) |
Applications typiques
K4A8G085WB-BCRC convient pour 6 applications: High-Performance Computing, Networking Equipment, Industrial Embedded Systems, Automotive Infotainment, Consumer Electronics, Data Center Storage.
High-Performance Computing
The K4A8G085WB-BCRC provides high-density, high-bandwidth memory for servers and workstations. Its 8Gb density and 2400 Mbps data rate enable fast data processing for scientific simulations, data analytics, and virtualization. The low 1.2V operating voltage reduces power consumption in large-scale deployments, while the FBGA package allows for compact module designs. When used in multi-channel configurations, it delivers the memory bandwidth required for CPU and GPU intensive workloads.
Recommandé
Networking Equipment
In routers, switches, and network appliances, the K4A8G085WB-BCRC offers the memory capacity and speed needed for packet buffering, routing tables, and flow processing. Its 2400 Mbps data rate ensures low-latency data transfer, while the 8Gb density supports large forwarding databases. The 1.2V operation helps manage thermal budgets in dense networking hardware. The FBGA package is ideal for space-constrained line cards and compact switches.
Recommandé
Industrial Embedded Systems
The K4A8G085WB-BCRC is suitable for industrial PCs, PLCs, and robotics controllers that require reliable, high-speed memory. Its 0-85°C operating range covers most industrial environments, and the 8Gb density supports complex control algorithms and data logging. The 1.2V supply reduces power dissipation in sealed enclosures. The FBGA package provides robust solder joints for vibration resistance, making it suitable for factory automation and process control.
Recommandé
Automotive Infotainment
In automotive infotainment systems, the K4A8G085WB-BCRC provides memory for navigation, multimedia playback, and connectivity features. Its 8Gb density allows storage of large map databases and media buffers, while the 2400 Mbps data rate ensures smooth video streaming. The 1.2V operation helps meet automotive power budgets. Although the standard temperature range is 0-85°C, for automotive applications requiring -40°C operation, consider the industrial-grade variant K4A8G085WB-BICH.
Recommandé
Consumer Electronics
The K4A8G085WB-BCRC is used in high-end consumer devices such as smart TVs, set-top boxes, and gaming consoles. Its 8Gb density supports 4K video processing and multitasking, while the 2400 Mbps data rate enables fast app loading. The low 1.2V voltage is ideal for battery-powered devices like tablets and laptops. The FBGA package allows for slim device designs. The commercial temperature range is sufficient for consumer environments.
Recommandé
Data Center Storage
In data center storage systems, the K4A8G085WB-BCRC provides cache memory for SSDs and storage controllers. Its high density and speed improve random access performance and reduce latency. The 1.2V operation lowers power consumption in large storage arrays. The FBGA package is suitable for high-density memory modules. The device's reliability and long lifecycle make it suitable for 24/7 operation in enterprise storage.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4A8G085WB-BCRC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4A8G085WB-BCPB | K4A8G085WB-BIWE | H5AN8G6NDJR-XNC |
|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
Principaux différenciateurs
- High density 8Gb in a single package (vs K4A8G045WB-BCRC)
- Optimized for 2400 Mbps speed grade (vs K4A8G085WB-BIWE)
- Samsung B-die process technology (vs H5AN8G6NDJR-XNC)
Notes de conception
For reliable DDR4 operation, route all DQ, DQS, and address/command signals with controlled impedance (typically 40-50 ohms) and matched trace lengths. Keep the trace length difference between DQS and DQ within 0.5mm. Use a solid ground plane beneath the memory device and provide adequate decoupling capacitors (0.1uF and 1uF) close to the VDD and VPP pins.
The K4A8G085WB-BCRC requires a clean 1.2V VDD supply and a 2.5V VPP supply. Use low-ESR ceramic capacitors for decoupling, and ensure the power supply can handle the peak current during refresh and burst operations. A dedicated power plane is recommended to minimize voltage droop. Refer to the datasheet for recommended power-up sequencing.
The FBGA package has a thermal resistance that depends on PCB layout and airflow. For high-density designs, ensure adequate airflow or use thermal vias under the package to dissipate heat. The operating temperature range is 0-85°C, so monitor the junction temperature in high-ambient environments. Consider derating if the device is placed near heat sources.
Informations de conformité
RoHS compliance is assumed based on Samsung's standard compliance, but not explicitly stated in the provided data. Other compliance statuses are unknown.
