K9PRGY8S7M - Samsung NAND Flash Memory IC | Samsung Electronics
Référence : K9PRGY8S7M ✓ Actif| Qté | Prix unitaire | Total |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1 000 | $0 | $0,00 |
K9PRGY8S7M Présentation
NAND flash is a type of non-volatile storage technology that retains data without power. Within the memory hierarchy, NAND flash sits below DRAM in speed but offers far higher density and lower cost per bit, making it the backbone of SSDs, eMMC modules, USB drives, memory cards, and embedded storage. NAND cells are arranged in series, which reduces die area and enables the multi-gigabit capacities required by modern consumer, industrial, and automotive systems. Samsung is one of the world's leading NAND producers, with its 3D V-NAND technology stacking cells vertically to increase density further.
Key characteristics of the K9-series include page-based program and block-based erase operations, asynchronous or toggled-mode interfaces, and internal ECC support on newer generations. Exact density, organization, page size, block size, and interface speed for this specific ordering code are not published in the retrieved web data and must be confirmed from the official Samsung datasheet.
Typical applications for this class of device include embedded storage in set-top boxes, smart TVs, industrial controllers, networking equipment, and solid-state drive assemblies where a raw NAND device is managed by a host controller or firmware layer such as FTL (Flash Translation Layer).
Design teams should confirm the exact package outline, ball map, supply voltage, and timing parameters against the Samsung datasheet before layout, since K9-series ordering codes encode density, configuration, and speed grade variations. Note that one distributor listing (OMO Electronic) attributes the MPN to BURNDY, which appears to be an indexing error given the K9 prefix and multiple corroborating NAND FLASH listings for Samsung.
This page synthesizes open-market sourcing data, lifecycle status, and alternative-part guidance not consolidated on any single distributor page.
Alternatives de remplacement direct pour K9PRGY8S7M — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K9PRGY8S7M (même facteur de forme et même empreinte) — différant par Mounting Type, Memory Type, Package Type, RoHS Status, NAND Technology.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K9PRGY8S7M-CCK0
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Voir la fiche technique →K9DMGY8J5B-CCK0
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K9PRGY8S7M Valeurs maximales et caractéristiques électriques
| Type de mémoire | NAND Flash |
| Manufacturer | Samsung Electronics |
| Package Type | BGA (surface mount) |
| Type de montage | Surface Mount |
Guide de configuration des broches du K9PRGY8S7M bga (surface mount)
Configuration des broches du K9PRGY8S7M (boîtier bga (surface mount)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K9PRGY8S7M.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K9PRGY8S7M convient pour 6 applications: Solid-State Drive Storage, Embedded System Storage, Consumer Electronics Firmware Storage, Networking and Communication Equipment, Automotive Infotainment Data Storage, Industrial Data Loggers.
Solid-State Drive Storage
The K9PRGY8S7M fits SSD data-storage arrays where a dedicated controller, such as Samsung's MEX (S4LN045X01) controller used in the Samsung 850 PRO SSD family, manages multiple NAND packages through a flash translation layer. In this role the NAND provides the non-volatile media while the controller handles ECC, wear leveling, and garbage collection. Performance depends on parallel channel configuration; connecting multiple K9-series packages across independent channels multiplies bandwidth and hides program/erase latencies. Designers should verify density, page size, and toggle-mode timing from the Samsung datasheet to configure controller timing registers correctly, and should budget spare blocks for wear-leveling overhead over the drive's rated endurance.
Recommandé
Embedded System Storage
In set-top boxes, smart TVs, industrial controllers, and networking equipment, the K9PRGY8S7M serves as bulk non-volatile storage for firmware images, application data, and logs. Raw K9-series NAND is appropriate when the host SoC includes a NAND flash controller with hardware ECC, allowing the BOM to avoid the cost premium of managed eMMC. The trade-off is firmware responsibility: the design team must implement bad-block management and wear leveling. Use the BGA footprint for space-constrained boards, and reserve spare blocks per the datasheet specification since block retirement accumulates over product lifetime in always-on devices with frequent logging writes.
Recommandé
Consumer Electronics Firmware Storage
Consumer devices such as audio equipment, appliances, and toys require moderate-capacity non-volatile storage for code and user settings. The K9PRGY8S7M in a compact BGA surface-mount package supports automated assembly on high-volume lines. Because raw NAND density per package is high, one device often covers total firmware plus data needs, simplifying the BOM. Designers should implement a boot-block protection scheme so the primary firmware region is not erased by errant writes, and should validate cold-temperature boot timing since NAND read latency tolerances must remain within controller timing windows across the rated operating range.
Recommandé
Networking and Communication Equipment
Routers, switches, and baseband cards use K9-series NAND to store OS images, configuration files, and traffic logs. The K9PRGY8S7M provides the raw media while the system's CPU companion controller executes the FTL. High write-frequency logging workloads make wear leveling quality a reliability differentiator; industrial networking equipment should derate endurance generously and monitor block wear via SMART-style telemetry. When dual-bank firmware update schemes are used, capacity planning must account for storing two complete images simultaneously. Confirm supply voltage and interface timing from the Samsung datasheet to match the SoC's memory controller configuration before tape-out.
Recommandé
Automotive Infotainment Data Storage
Automotive infotainment head units and telematics boxes store navigation maps, media, and diagnostic logs on NAND flash. While the K9PRGY8S7M itself is not AEC-Q100 qualified per the available data, K9-series devices are used in consumer-grade automotive tiers where a dedicated controller with strong ECC handles the harsh electrical environment. For safety-relevant designs, prefer Samsung automotive-qualified storage such as the K4R-series automotive DRAM family for working memory paired with an eMMC. Wide supply-voltage transients, extended temperature derating, and power-fail integrity (write-atomic FTL journaling) are the key engineering considerations in this deployment.
Recommandé
Industrial Data Loggers
Industrial data loggers and SCADA edge nodes write sensor records continuously for years, making NAND endurance and power-fail robustness the dominant design factors. The K9PRGY8S7M provides dense raw storage; the controller must journal writes so a brownout never corrupts committed records, and must balance wear across blocks to reach the system lifetime target. Estimated: if the application writes 100 MB per day and the device endurance supports the datasheet P/E cycle count, capacity planning should include 2x over-provisioning for wear leveling. Verify the exact P/E cycle rating and page program time from the official Samsung datasheet before finalizing the endurance budget.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K9PRGY8S7M — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K9PRGY8S7M-CCK0 | K9DMGY8J5B-CCK0 |
|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | BGA (surface mount) | BGA - same footprint family | BGA - verify ball map |
| Memory Type | NAND Flash | NAND Flash | NAND Flash |
| Speed Grade Suffix | Base ordering code | -CCK0 | -CCK0 |
| Lifecycle Status | Active | Active (broker listings) | Active (broker listings) |
Principaux différenciateurs
- Samsung-origin K9-series NAND die (vs K9DMGY8J5B-CCK0)
- Raw NAND cost efficiency (vs K3LKJKJ0CM-MUCP (eMMC))
- BGA surface-mount format (vs TSOP-packaged legacy K9 NAND)
Notes de conception
One open-market listing (OMO Electronic) attributes K9PRGY8S7M to BURNDY, but this contradicts the K9 Samsung naming convention and multiple corroborating NAND FLASH listings from IC2IC and Alibaba naming Samsung. When sourcing from brokers, insist on Samsung-original marking, date codes, and, where possible, supplierqualification samples. Counterfeit or remarked NAND is a well-known risk in open-market memory procurement, and a misidentified density can cause hard failures at FTL initialization.
BGA-packaged NAND requires careful escape routing: plan ball-out fan-out before finalizing the footprint, use via-in-pad or dog-bone escapes consistent with your fab's capability, and verify the exact ball map from the official Samsung datasheet rather than assuming a generic BGA pattern. Keep the solder mask-defined pad geometry per JEDEC-style BGA land patterns specified by Samsung, and control reflow profile to avoid solder bridging on fine-pitch ball rows. Confirm ball count and package dimensions from the datasheet before library creation.
Decouple the NAND supply rails with at least 100 nF ceramic capacitor per supply ball pair plus one bulk capacitor per device, placed close to the BGA. Because this raw NAND shares a supply domain with the host controller in most designs, ensure power-fail detection circuitry can gate write enable in time to prevent torn page writes; a supervisory circuit with early-warning threshold gives the FTL time to complete or abort the current program operation cleanly.
Informations de conformité
Compliance status not stated in retrieved web data. Samsung memory products are typically RoHS compliant, but this must be confirmed from the official product page or datasheet.
