NT5CC256M16CN-FLH - 4Gb DDR3L SDRAM | Nanya Technology
Référence : NT5CC256M16CN-FLH ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $9.8 | $980,00 |
| 500 | $8.5 | $4 250,00 |
| 1 000 | $7.2 | $7 200,00 |
NT5CC256M16CN-FLH Présentation
DDR3L SDRAM is a type of dynamic random access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by approximately 20% while maintaining high bandwidth. It is part of the DDR3 memory family, which uses an 8n-prefetch architecture to achieve high data rates. DDR3L is widely used in computing, networking, and embedded systems where power efficiency is critical.
Key features include a 16-bit I/O interface, 8 internal banks, burst lengths of 8 and 4 (with burst chop), on-die termination (ODT), and programmable CAS latency. The device supports auto self-refresh, auto precharge, and write leveling for signal integrity. It also includes a ZQ calibration function for improved timing accuracy.
The NT5CC256M16CN-FLH is built on Nanya's advanced DRAM process technology, ensuring high reliability and performance. It supports a temperature range of 0°C to +95°C (TC) for commercial and industrial grades, with automotive grade options available. The device is RoHS compliant and lead-free.
Typical applications include DDR3L memory modules for laptops, servers, networking equipment, industrial PCs, and automotive infotainment systems. Its low voltage and high density make it ideal for power-sensitive designs.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.35V supply and a separate VDDQ for the I/O, which should be regulated accurately.
Alternatives de remplacement direct pour NT5CC256M16CN-FLH — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5CC256M16CN-FLH (même facteur de forme et même empreinte) — différant par Package, Supply Voltage, Memory Type, CAS Latency, Clock Frequency.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5CC256M16ER-EKH
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NT5CB256M16CN-FLH
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →IS43TR16512B-125KBLI
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
NT5CC256M16CN-FLH Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4Gb (256M x 16) |
| Tension d'alimentation | 1.35V (1.283V to 1.45V) |
| Débit de données | 1866 Mbps (PC3-14900) |
| I/O Interface | 16-bit |
| Internal Banks | 8 |
| Burst Length | 8, 4 (with burst chop) |
| Latence CAS | 13, 12, 11, 10, 9 |
| Boîtier | 96-ball FBGA |
| Plage de température de fonctionnement | 0°C to +95°C (TC) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Supported |
| On-Die Termination (ODT) | Supported |
| ZQ Calibration | Supported |
Configuration des broches de NT5CC256M16CN-FLH
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | VSS — Ground |
| Broche B1 | DQ0 — Data I/O 0 |
| Broche B2 | DQ1 — Data I/O 1 |
| Broche C1 | DQ2 — Data I/O 2 |
| Broche C2 | DQ3 — Data I/O 3 |
| Broche D1 | VDDQ — I/O power supply |
| Broche D2 | VSSQ — I/O ground |
| Broche E1 | A0 — Address input 0 |
| Broche E2 | A1 — Address input 1 |
| Broche F1 | BA0 — Bank address 0 |
| Broche F2 | BA1 — Bank address 1 |
| Broche G1 | CK — Clock input |
| Broche G2 | CK# — Complementary clock input |
| Broche H1 | CKE — Clock enable |
| Broche H2 | CS# — Chip select |
Applications typiques
NT5CC256M16CN-FLH convient pour 6 applications: Laptop Memory, Networking Equipment, Industrial PCs, Automotive Infotainment, Embedded Systems, Server Memory.
Laptop Memory
The NT5CC256M16CN-FLH is ideal for laptop memory modules (SO-DIMM) due to its low 1.35V operation and high density. It provides 4Gb capacity in a compact FBGA package, enabling thin and light designs. The 1866 Mbps data rate ensures fast system performance, while the low voltage extends battery life. Its 16-bit interface is suitable for dual-channel configurations, and the on-die termination improves signal integrity in high-speed layouts.
Recommandé
Networking Equipment
In networking equipment such as routers and switches, the NT5CC256M16CN-FLH provides high-bandwidth memory for packet buffering and routing tables. Its 1866 Mbps data rate supports high-throughput data processing, while the 1.35V supply reduces power consumption in always-on devices. The 4Gb density allows for large lookup tables, and the industrial temperature range (-40°C to +95°C) ensures reliability in harsh environments. The FBGA package is suitable for compact line cards.
Recommandé
Industrial PCs
The NT5CC256M16CN-FLH is well-suited for industrial PCs that require reliable memory in wide temperature ranges. Its 0°C to +95°C operating range covers most industrial environments, and the 1.35V low voltage reduces heat generation. The 4Gb density supports demanding applications like machine vision and process control. The 16-bit interface simplifies PCB routing, and the FBGA package offers good thermal performance. Auto self-refresh ensures data integrity during idle periods.
Recommandé
Automotive Infotainment
For automotive infotainment systems, the NT5CC256M16CN-FLH offers high-density memory with automotive-grade options. Its 1.35V operation reduces power consumption in vehicles, and the wide temperature range (-40°C to +95°C for automotive grade) ensures operation in extreme conditions. The 1866 Mbps data rate supports high-resolution displays and audio processing. The FBGA package is robust against vibration, and the ZQ calibration improves signal integrity in noisy automotive environments.
Recommandé
Embedded Systems
The NT5CC256M16CN-FLH is a versatile memory solution for embedded systems requiring high capacity and low power. Its 4Gb density is ideal for applications like IoT gateways, medical devices, and portable instruments. The 1.35V supply is compatible with low-power processors, and the 16-bit interface reduces pin count. The FBGA package is suitable for small form factors, and the auto self-refresh feature minimizes power consumption in standby modes. The device supports a wide range of operating temperatures.
Recommandé
Server Memory
In server applications, the NT5CC256M16CN-FLH provides high-density, low-voltage memory for DIMM modules. Its 1866 Mbps data rate supports high-bandwidth workloads, while the 1.35V supply reduces power consumption in data centers. The 4Gb density allows for large memory capacities, and the on-die termination improves signal integrity in multi-rank configurations. The FBGA package is standard for server DIMMs, and the device supports ECC when paired with an appropriate controller.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5CC256M16CN-FLH — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5CC256M16ER-EKH | NT5CB256M16CN-FLH | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| I/O Interface | 16-bit | 16-bit | 16-bit | 16-bit |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Low voltage operation (1.35V) reduces power consumption by 20% compared to standard DDR3 (vs MT41K256M16HA-125)
- Wide temperature range for industrial and automotive applications (vs K4B4G1646E-BYMA)
- High data rate of 1866 Mbps for high-bandwidth applications (vs IS43TR16512B-125KBLI)
Notes de conception
Ensure a stable 1.35V supply with low ripple for VDD and VDDQ. Use a dedicated voltage regulator with adequate decoupling capacitors (e.g., 0.1uF and 10uF) placed close to the power pins. The device requires VDD and VDDQ to be within 1.283V to 1.45V. Proper power sequencing is essential: VDD and VDDQ should ramp up simultaneously, and VDDQ must not exceed VDD.
Follow the layout guidelines in the Nanya datasheet for DDR3L routing. Maintain controlled impedance (typically 50 ohms single-ended, 100 ohms differential) for DQ, DQS, and clock signals. Keep trace lengths matched within 0.5mm for data and address buses. Place termination resistors for ODT as recommended. Use a solid ground plane and minimize vias to reduce signal integrity issues.
The NT5CC256M16CN-FLH has a maximum operating temperature of +95°C (TC). Ensure adequate airflow or heatsinking in high-temperature environments. The FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For automotive applications, derate the operating temperature as specified in the datasheet when operating above 95°C.
Informations de conformité
RoHS compliant per Nanya datasheet. Lead-free. AEC-Q100 not applicable for DRAM; automotive grade may be available.
