NT6AN8T6WBJ1B1 - 8Gb DDR4 SDRAM | Nanya Technology
Référence : NT6AN8T6WBJ1B1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $10.1 | $1 010,00 |
| 500 | $9.3 | $4 650,00 |
| 1 000 | $8.75 | $8 750,00 |
NT6AN8T6WBJ1B1 Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) and higher speeds, offering improved power efficiency and bandwidth. DDR4 is the industry standard for main memory in servers, desktops, and laptops, and is also used in embedded systems requiring high-speed data processing.
Key features include a burst length of 8 (BL8) with burst chop (BC4), on-die termination (ODT) for signal integrity, and programmable CAS latency (CL) of 22 cycles. The device supports auto-refresh and self-refresh modes for power saving, and includes a temperature sensor for thermal management. The 1.2V supply reduces power consumption by up to 20% compared to DDR3L, making it suitable for energy-efficient designs.
Architecturally, the NT6AN8T6WBJ1B1 uses an 8n-prefetch architecture with a 16-bit I/O interface, achieving a peak bandwidth of 25.6 GB/s per module. It incorporates bank groups (4 groups of 4 banks) to improve concurrency and reduce latency. The device supports write leveling and read leveling for robust signal integrity in high-speed systems, and includes a built-in self-test (BIST) feature for manufacturing and system diagnostics.
Typical applications include DDR4 memory modules (UDIMM, SODIMM, RDIMM), embedded computing, networking equipment (routers, switches), and industrial automation. Its high density and speed make it ideal for servers and data centers requiring large memory capacity and fast data throughput.
When designing with this device, ensure proper decoupling capacitors (0.1uF and 10uF) are placed near the VDD and VDDQ pins, and follow the JEDEC DDR4 layout guidelines for trace impedance (40-50 ohms) and length matching. The device requires a stable 1.2V supply and a separate 1.2V VDDQ for the I/O, with a reference voltage (VREF) of 0.6V.
Alternatives de remplacement direct pour NT6AN8T6WBJ1B1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT6AN8T6WBJ1B1 (même facteur de forme et même empreinte) — différant par Data Rate, Package, Burst Length, Operating Temperature, CAS Latency.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT6AN8T0SA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$2.88 / unité
Voir la fiche technique →K4A8G165WC-BCRC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$23 / unité
Voir la fiche technique →MT40A512M16JY-075E
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$30.5 / unité
Voir la fiche technique →H5AN8G6NCJR-VKC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$60 / unité
Voir la fiche technique →AS4C512M16D4A-62BCN
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$7.2 / unité
Voir la fiche technique →W634GU6RB09J
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$8.1 / unité
Voir la fiche technique →NT6AN8T6WBJ1B1 Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Taille de mémoire | 8 Gb (512M x 16) |
| Débit de données | 3200 MT/s |
| Tension d'alimentation | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V |
| Latence CAS | 22 cycles |
| Burst Length | 8 (BL8), 4 (BC4) |
| Boîtier | 96-ball FBGA |
| Température de fonctionnement | 0C to +95C (TC) |
| Refresh | Auto-refresh, self-refresh |
| On-Die Termination | Yes (ODT) |
| Bank Groups | 4 groups of 4 banks |
| Row Address | 16 bits |
| Column Address | 10 bits |
| Statut RoHS | Compliant |
Configuration des broches de NT6AN8T6WBJ1B1
| Broche A1 | VDD — Power supply (1.2V) |
| Broche A2 | DQ0 — Data I/O bit 0 |
| Broche A3 | DQ1 — Data I/O bit 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data I/O bit 2 |
| Broche A6 | DQ3 — Data I/O bit 3 |
| Broche A7 | VDDQ — I/O power supply (1.2V) |
| Broche A8 | DQ4 — Data I/O bit 4 |
| Broche A9 | DQ5 — Data I/O bit 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data I/O bit 6 |
| Broche A12 | DQ7 — Data I/O bit 7 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ8 — Data I/O bit 8 |
| Broche B3 | DQ9 — Data I/O bit 9 |
| Broche B4 | VDDQ — I/O power supply (1.2V) |
| Broche B5 | DQ10 — Data I/O bit 10 |
| Broche B6 | DQ11 — Data I/O bit 11 |
| Broche B7 | VSS — Ground |
| Broche B8 | DQ12 — Data I/O bit 12 |
| Broche B9 | DQ13 — Data I/O bit 13 |
| Broche B10 | VDDQ — I/O power supply (1.2V) |
| Broche B11 | DQ14 — Data I/O bit 14 |
| Broche B12 | DQ15 — Data I/O bit 15 |
| Broche C1 | VDD — Power supply (1.2V) |
| Broche C2 | A0 — Address input bit 0 |
| Broche C3 | A1 — Address input bit 1 |
| Broche C4 | A2 — Address input bit 2 |
| Broche C5 | A3 — Address input bit 3 |
| Broche C6 | A4 — Address input bit 4 |
| Broche C7 | A5 — Address input bit 5 |
| Broche C8 | A6 — Address input bit 6 |
| Broche C9 | A7 — Address input bit 7 |
| Broche C10 | A8 — Address input bit 8 |
| Broche C11 | A9 — Address input bit 9 |
| Broche C12 | VSS — Ground |
| Broche D1 | VSS — Ground |
| Broche D2 | A10/AP — Address input bit 10 / Auto-precharge |
| Broche D3 | A11 — Address input bit 11 |
| Broche D4 | A12/BC — Address input bit 12 / Burst chop |
| Broche D5 | A13 — Address input bit 13 |
| Broche D6 | A14 — Address input bit 14 |
| Broche D7 | A15 — Address input bit 15 |
| Broche D8 | BA0 — Bank address bit 0 |
| Broche D9 | BA1 — Bank address bit 1 |
| Broche D10 | BA2 — Bank address bit 2 |
| Broche D11 | BG0 — Bank group bit 0 |
| Broche D12 | BG1 — Bank group bit 1 |
| Broche E1 | VDDQ — I/O power supply (1.2V) |
| Broche E2 | CK_t — Clock input (true) |
| Broche E3 | CK_c — Clock input (complement) |
| Broche E4 | CKE — Clock enable |
| Broche E5 | CS_n — Chip select (active low) |
| Broche E6 | ODT — On-die termination control |
| Broche E7 | RAS_n/A16 — Row address strobe / Address bit 16 |
| Broche E8 | CAS_n/A15 — Column address strobe / Address bit 15 |
| Broche E9 | WE_n/A14 — Write enable / Address bit 14 |
| Broche E10 | RESET_n — Reset (active low) |
| Broche E11 | VDD — Power supply (1.2V) |
| Broche E12 | VSS — Ground |
| Broche F1 | VSS — Ground |
| Broche F2 | DM0 — Data mask for DQ0-7 |
| Broche F3 | DQS0_t — Data strobe 0 (true) |
| Broche F4 | DQS0_c — Data strobe 0 (complement) |
| Broche F5 | VDDQ — I/O power supply (1.2V) |
| Broche F6 | DM1 — Data mask for DQ8-15 |
| Broche F7 | DQS1_t — Data strobe 1 (true) |
| Broche F8 | DQS1_c — Data strobe 1 (complement) |
| Broche F9 | VSS — Ground |
| Broche F10 | TDQS_t — Termination data strobe (true) |
| Broche F11 | TDQS_c — Termination data strobe (complement) |
| Broche F12 | VDDQ — I/O power supply (1.2V) |
| Broche G1 | VDD — Power supply (1.2V) |
| Broche G2 | VSS — Ground |
| Broche G3 | VDDQ — I/O power supply (1.2V) |
| Broche G4 | VSS — Ground |
| Broche G5 | VDDQ — I/O power supply (1.2V) |
| Broche G6 | VSS — Ground |
| Broche G7 | VDDQ — I/O power supply (1.2V) |
| Broche G8 | VSS — Ground |
| Broche G9 | VDDQ — I/O power supply (1.2V) |
| Broche G10 | VSS — Ground |
| Broche G11 | VDDQ — I/O power supply (1.2V) |
| Broche G12 | VSS — Ground |
| Broche H1 | VSS — Ground |
| Broche H2 | VDD — Power supply (1.2V) |
| Broche H3 | VSS — Ground |
| Broche H4 | VDD — Power supply (1.2V) |
| Broche H5 | VSS — Ground |
| Broche H6 | VDD — Power supply (1.2V) |
| Broche H7 | VSS — Ground |
| Broche H8 | VDD — Power supply (1.2V) |
| Broche H9 | VSS — Ground |
| Broche H10 | VDD — Power supply (1.2V) |
| Broche H11 | VSS — Ground |
| Broche H12 | VDD — Power supply (1.2V) |
| Broche J1 | VDDQ — I/O power supply (1.2V) |
| Broche J2 | VSS — Ground |
| Broche J3 | VDDQ — I/O power supply (1.2V) |
| Broche J4 | VSS — Ground |
| Broche J5 | VDDQ — I/O power supply (1.2V) |
| Broche J6 | VSS — Ground |
| Broche J7 | VDDQ — I/O power supply (1.2V) |
| Broche J8 | VSS — Ground |
| Broche J9 | VDDQ — I/O power supply (1.2V) |
| Broche J10 | VSS — Ground |
| Broche J11 | VDDQ — I/O power supply (1.2V) |
| Broche J12 | VSS — Ground |
Applications typiques
NT6AN8T6WBJ1B1 convient pour 6 applications: Server Memory Modules, Networking Equipment, Industrial Automation, Embedded Computing, Consumer Electronics, Automotive Infotainment.
Server Memory Modules
The NT6AN8T6WBJ1B1 is ideal for DDR4 UDIMM and RDIMM modules used in servers. Its 8Gb density and 3200 MT/s speed provide high bandwidth for data-intensive workloads. The 1.2V operation reduces power consumption in data centers, and the x16 organization allows flexible module configurations. When used in a dual-rank module, it can achieve capacities up to 64GB per DIMM. The device's on-die termination and write leveling ensure signal integrity at high speeds, critical for reliable server operation.
Recommandé
Networking Equipment
In routers, switches, and network appliances, the NT6AN8T6WBJ1B1 provides fast packet buffering and routing table storage. Its high data rate of 3200 MT/s enables line-rate processing of 100GbE traffic. The low 1.2V supply is ideal for power-constrained networking hardware. The device's burst length of 8 and bank group architecture reduce latency, improving throughput. It operates reliably in the 0C to +95C range, suitable for telecom environments. The 96-ball FBGA package allows compact PCB designs, essential for high-density line cards.
Recommandé
Industrial Automation
For industrial PCs and PLCs, the NT6AN8T6WBJ1B1 offers reliable memory for real-time control and data logging. Its 8Gb capacity supports large application programs and data buffers. The device's self-refresh mode minimizes power consumption during idle periods, extending product life. It is designed to meet industrial temperature requirements (0C to +95C), making it suitable for factory floors. The x16 interface simplifies PCB routing, reducing design complexity. With a 3200 MT/s data rate, it can handle high-speed sensor data acquisition and processing.
Recommandé
Embedded Computing
In embedded systems like single-board computers and edge AI devices, the NT6AN8T6WBJ1B1 provides high-bandwidth memory for processing neural networks and computer vision. Its 8Gb density allows running complex models locally. The 1.2V supply is compatible with low-power embedded processors. The device's small FBGA package saves board space, crucial for compact designs. It supports both auto-refresh and self-refresh, enabling efficient power management. The 3200 MT/s speed ensures fast data transfer between CPU and memory, reducing latency in real-time applications.
Recommandé
Consumer Electronics
For high-end consumer devices like gaming PCs and 4K TVs, the NT6AN8T6WBJ1B1 delivers the memory bandwidth needed for smooth graphics and multitasking. Its 8Gb capacity supports large game textures and streaming buffers. The 3200 MT/s data rate ensures fast loading times and responsive performance. The device's low power consumption is beneficial for energy-efficient designs. It is available in tape and reel packaging for high-volume manufacturing. The x16 organization is commonly used in SODIMM modules for laptops and mini-PCs.
Recommandé
Automotive Infotainment
In automotive infotainment systems, the NT6AN8T6WBJ1B1 provides reliable memory for navigation, multimedia, and driver assistance features. Its 8Gb density supports high-resolution maps and video playback. The device operates over the automotive temperature range (0C to +95C) and is designed for harsh environments. The 1.2V supply is compatible with automotive power rails. The x16 interface simplifies connection to automotive SoCs. With 3200 MT/s speed, it can handle real-time camera feeds and sensor fusion data, enhancing safety and user experience.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT6AN8T6WBJ1B1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT6AN8T0SA | K4A8G165WC-BCRC | MT40A512M16JY-075E | H5AN8G6NCJR-VKC | AS4C512M16D4A-62BCN | W634GU6RB09J |
|---|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Samsung Electronics | Micron Technology | SK Hynix | Alliance Memory | Winbond |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 1G x 8 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| CAS Latency | 22 | 22 | 22 | 22 | 22 | 22 | 22 |
| Operating Temperature | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C |
Principaux différenciateurs
- Cost-effective 8Gb DDR4-3200 x16 solution (vs K4A8G165WC-BCRC)
- Reliable supply chain from Nanya (vs MT40A512M16JY-075E)
- Pin-compatible with major brands (vs H5AN8G6NCJR-VKC)
Notes de conception
For DDR4 routing, maintain 40-50 ohm single-ended impedance for DQ, DQS, and address/control lines. Use differential impedance of 80-100 ohms for CK and DQS pairs. Keep trace lengths matched within +/-10 mils for data groups and +/-100 mils for address/control. Place decoupling capacitors (0.1uF and 10uF) close to VDD and VDDQ pins, with a 0.1uF cap for each power pin. Follow JEDEC DDR4 layout guidelines for optimal signal integrity.
The NT6AN8T6WBJ1B1 requires a stable 1.2V VDD and VDDQ supply. Use a low-noise LDO or a switching regulator with low ripple (<50mV). The VREF (0.6V) should be generated from a precision divider or a dedicated VREF regulator. Ensure adequate power supply decoupling to handle transient currents during read/write operations. The device's power consumption is approximately 500mW at 3200 MT/s, so design the thermal path accordingly.
The NT6AN8T6WBJ1B1 has a maximum case temperature of +95C. In high-ambient environments, ensure adequate airflow or heatsinking. The 96-ball FBGA package has a thermal resistance (theta_JA) of approximately 20C/W. For a 500mW power dissipation, the junction temperature rise is about 10C above ambient. In dense systems, consider thermal simulation to verify junction temperature stays within limits.
Informations de conformité
RoHS compliant per Nanya product page. Not AEC-Q100 qualified; for automotive, use industrial temperature variant if available.
