NT5AD512M16 - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology
Référence : NT5AD512M16 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $94.74 | $94,74 |
| 10 | $89.5 | $895,00 |
| 100 | $84.25 | $8 425,00 |
| 500 | $79 | $39 500,00 |
| 1 000 | $73.75 | $73 750,00 |
NT5AD512M16 Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher bandwidth and lower power consumption compared to DDR3. It achieves data rates of 1600 to 3200 MT/s, with a prefetch buffer of 8n, and operates at a standard voltage of 1.2V, reducing power by up to 40% versus DDR3L. DDR4 is the dominant memory technology for modern servers, desktops, laptops, and increasingly for embedded systems requiring high-speed data processing.
Key features of the NT5AD512M16 include auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (ODT), ZQ calibration, and CRC error detection. These features enhance signal integrity, reliability, and ease of integration in high-speed systems. The device supports burst lengths of 8 and 4 (with burst chop), and programmable CAS latency, enabling optimization for specific performance requirements.
The NT5AD512M16 utilizes advanced DRAM process technology, achieving high density (8Gb) in a compact 96-ball FBGA package (approximately 9mm x 13mm). The package is optimized for high-speed signaling with minimal parasitic inductance and capacitance, supporting data rates up to 3200 Mbps. The device includes on-die termination (ODT) for improved signal integrity on the data bus, and supports write leveling for proper timing alignment in multi-rank systems.
Typical applications include high-performance computing, servers, networking equipment, industrial automation, and embedded systems requiring large memory capacity and high bandwidth. The commercial temperature grade (0°C to +95°C) suits consumer electronics, while the industrial grade (-40°C to +95°C) is ideal for harsh environments. The 512Mx16 organization is particularly suited for applications needing high density per chip, reducing board space and component count.
When designing with the NT5AD512M16, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the layout guidelines in the datasheet for impedance-controlled traces. The device requires a stable 1.2V VDD and 2.5V VPP supply, and the ZQ pin must be connected to a 240-ohm resistor to ground for calibration. Careful attention to signal integrity and power integrity is critical for reliable operation at 3200 Mbps.
Alternatives de remplacement direct pour NT5AD512M16 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5AD512M16 (même facteur de forme et même empreinte) — différant par Data Rate, Package, Density, Supply Voltage, Operating Temperature.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5AD512M16C4-HR
✅ Remplacement direct✓ En stock
$43.1 / unité
Voir la fiche technique →NT5AD512M16H4-JR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NT5AD512M16A3-GZI
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A512M16JY-07EAIT:B
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$8.1 / unité
Voir la fiche technique →K4A8G165WB-BCTD
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$37 / unité
Voir la fiche technique →H5AN8G6NDJR-XNC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$55.6818 / unité
Voir la fiche technique →NT5AD512M16 Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Organisation de la mémoire | 512M x 16 |
| Total Density | 8 Gbit |
| Supply Voltage (VDD) | 1.2 V |
| Débit de données | 3200 Mbps (DDR4-3200) |
| Boîtier | 96-ball FBGA |
| Operating Temperature (Commercial) | 0°C to +95°C |
| Operating Temperature (Industrial) | -40°C to +95°C |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
Configuration des broches de NT5AD512M16
| Broche A1 | VDD — Power supply (1.2V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche B1 | DQ2 — Data input/output 2 |
| Broche B2 | DQ3 — Data input/output 3 |
| Broche B3 | VDDQ — DQ power supply |
| Broche C1 | DQ4 — Data input/output 4 |
| Broche C2 | DQ5 — Data input/output 5 |
| Broche C3 | VSSQ — DQ ground |
| Broche D1 | DQ6 — Data input/output 6 |
| Broche D2 | DQ7 — Data input/output 7 |
| Broche D3 | VDD — Power supply |
| Broche E1 | DQS0 — Data strobe 0 |
| Broche E2 | DQS0# — Data strobe 0 complement |
| Broche E3 | VSS — Ground |
| Broche F1 | DM0 — Data mask 0 |
| Broche F2 | VDDQ — DQ power supply |
| Broche F3 | DQ8 — Data input/output 8 |
| Broche G1 | DQ9 — Data input/output 9 |
| Broche G2 | DQ10 — Data input/output 10 |
| Broche G3 | VSSQ — DQ ground |
| Broche H1 | DQ11 — Data input/output 11 |
| Broche H2 | DQ12 — Data input/output 12 |
| Broche H3 | VDD — Power supply |
| Broche J1 | DQ13 — Data input/output 13 |
| Broche J2 | DQ14 — Data input/output 14 |
| Broche J3 | DQ15 — Data input/output 15 |
| Broche K1 | DQS1 — Data strobe 1 |
| Broche K2 | DQS1# — Data strobe 1 complement |
| Broche K3 | VSS — Ground |
| Broche L1 | DM1 — Data mask 1 |
| Broche L2 | VDDQ — DQ power supply |
| Broche L3 | VSSQ — DQ ground |
| Broche M1 | A0 — Address input 0 |
| Broche M2 | A1 — Address input 1 |
| Broche M3 | A2 — Address input 2 |
| Broche N1 | A3 — Address input 3 |
| Broche N2 | A4 — Address input 4 |
| Broche N3 | A5 — Address input 5 |
| Broche P1 | A6 — Address input 6 |
| Broche P2 | A7 — Address input 7 |
| Broche P3 | A8 — Address input 8 |
| Broche R1 | A9 — Address input 9 |
| Broche R2 | A10/AP — Address input 10 / Auto-precharge |
| Broche R3 | A11 — Address input 11 |
| Broche T1 | A12 — Address input 12 |
| Broche T2 | A13 — Address input 13 |
| Broche T3 | A14 — Address input 14 |
| Broche U1 | A15 — Address input 15 |
| Broche U2 | BA0 — Bank address 0 |
| Broche U3 | BA1 — Bank address 1 |
| Broche V1 | BA2 — Bank address 2 |
| Broche V2 | BG0 — Bank group 0 |
| Broche V3 | BG1 — Bank group 1 |
| Broche W1 | CK — Clock |
| Broche W2 | CK# — Clock complement |
| Broche W3 | CKE — Clock enable |
| Broche Y1 | CS# — Chip select |
| Broche Y2 | ODT — On-die termination |
| Broche Y3 | RAS# — Row address strobe |
| Broche AA1 | CAS# — Column address strobe |
| Broche AA2 | WE# — Write enable |
| Broche AA3 | RESET# — Reset |
| Broche AB1 | ZQ — Calibration reference |
| Broche AB2 | VPP — Wordline boost supply (2.5V) |
| Broche AB3 | VSS — Ground |
Applications typiques
NT5AD512M16 convient pour 6 applications: High-Performance Computing, Networking Equipment, Industrial Automation, Embedded Systems, Data Center Servers, Consumer Electronics.
High-Performance Computing
The NT5AD512M16 provides 8Gb density and 3200 Mbps data rate, making it ideal for HPC systems requiring large memory capacity and high bandwidth. Its 512Mx16 organization reduces chip count, saving board space. The device's low 1.2V operation minimizes power consumption in dense memory arrays, and features like CRC and write leveling ensure reliable data transfer at high speeds.
Recommandé
Networking Equipment
In networking switches and routers, the NT5AD512M16 offers high-speed packet buffering with 3200 Mbps data rate and 8Gb capacity. Its auto self-refresh and temperature sensor help maintain data integrity in thermally challenging environments. The 96-ball FBGA package is suitable for compact line cards, and the device's low power consumption reduces cooling requirements.
Recommandé
Industrial Automation
The industrial temperature grade (NT5AD512M16H4-JR) supports -40°C to +95°C, making it suitable for factory automation and control systems. The device's robust features like auto precharge and data mask ensure reliable operation in noisy environments. With 8Gb density, it can store large logs and application code, while the 1.2V supply reduces power in distributed I/O modules.
Recommandé
Embedded Systems
For embedded computing, the NT5AD512M16 provides high-density memory in a small 96-ball FBGA package, ideal for space-constrained designs. Its 512Mx16 organization simplifies routing and reduces PCB layers. The device supports DDR4-3200 for fast data access, and features like dynamic ODT improve signal integrity without external components.
Recommandé
Data Center Servers
In server memory modules, the NT5AD512M16 offers high density and bandwidth for virtualization and database workloads. Its 8Gb capacity allows higher module densities, and the 3200 Mbps data rate meets server performance requirements. The device's low power and thermal features help manage data center energy costs, while CRC ensures data integrity in critical applications.
Recommandé
Consumer Electronics
For high-end consumer devices like smart TVs and gaming consoles, the NT5AD512M16 provides fast memory for smooth graphics and multitasking. Its 1.2V operation reduces power in battery-powered devices, and the compact FBGA package fits slim designs. The commercial temperature grade covers typical consumer operating ranges, and features like write leveling ensure compatibility with various SoCs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5AD512M16 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5AD512M16C4-HR | NT5AD512M16H4-JR | MT40A512M16JY-07EAIT:B | K4A8G165WB-BCTD |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Temperature Grade | Commercial (0°C to +95°C) | Commercial (0°C to +95°C) | Industrial (-40°C to +95°C) | Industrial (-40°C to +95°C) | Commercial (0°C to +95°C) |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- High density in 16-bit organization (vs NT5AD512M8D3-HR)
- Industrial temperature grade option (vs MT40A512M16JY-07EAIT:B)
- Built-in temperature sensor and CRC (vs K4A8G165WB-BCTD)
Notes de conception
The NT5AD512M16 requires a stable 1.2V VDD supply and a 2.5V VPP supply for wordline boost. Use low-impedance decoupling capacitors (0.1uF and 1uF) placed close to each VDD/VDDQ pin to minimize power supply noise. Ensure the power plane has low inductance and adequate copper pour to handle transient currents during read/write operations.
For DDR4-3200 operation, route all DQ, DQS, and address/control signals with controlled impedance (typically 40-50 ohms single-ended, 80-100 ohms differential). Maintain matched trace lengths within each byte lane to ensure timing skew is minimized. Follow the layout guidelines in the Nanya datasheet for the 96-ball FBGA package, including via placement and ground return paths.
The NT5AD512M16's power dissipation depends on operating frequency and activity. At 3200 Mbps, the device can dissipate up to [DATA_NEEDED: power dissipation] W. Ensure adequate airflow or a thermal pad is provided to keep the junction temperature within the specified range. The industrial grade supports up to +95°C case temperature, but proper thermal management is essential for reliability.
Informations de conformité
RoHS compliance confirmed from JLCPCB listing. Other compliance data not explicitly provided.
