NT5CC256M16DN-FLNA - 4Gb DDR3L SDRAM | Nanya Technology
Référence : NT5CC256M16DN-FLNA ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3 250,00 |
| 1 000 | $6 | $6 000,00 |
NT5CC256M16DN-FLNA Présentation
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20-30% while maintaining similar performance. It is part of the memory hierarchy in computing systems, serving as the main system memory for processors, and is widely used in laptops, embedded systems, and networking equipment.
Key features include a data rate of 1600 Mbps (PC3-12800) with a CL of 11, a burst length of 8, and on-die termination (ODT) for signal integrity. The device supports auto-refresh and self-refresh modes, and includes programmable CAS latency and additive latency. It is available in a 96-ball FBGA package, which is standard for DDR3L SDRAM.
The NT5CC256M16DN-FLNA uses a 30nm-class process technology, offering high density and low power consumption. It features a 16-bit I/O interface, which is ideal for applications requiring moderate bandwidth with lower pin count. The device includes a temperature sensor for thermal management and supports DLL (Delay-Locked Loop) for precise timing.
Typical applications include embedded computing, industrial automation, automotive infotainment, networking equipment, and consumer electronics such as set-top boxes and routers. Its low voltage and wide temperature range make it suitable for battery-powered and harsh environments.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable power supply and proper termination for the address/control lines.
Alternatives de remplacement direct pour NT5CC256M16DN-FLNA — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5CC256M16DN-FLNA (même facteur de forme et même empreinte) — différant par Package, CAS Latency, Data Rate, Refresh, Burst Length.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5CC256M16ER-FLNA
✅ Remplacement direct✓ En stock
$22 / unité
Voir la fiche technique →NT5CC256M16DP-FLNA
✅ Remplacement direct✓ En stock
$20 / unité
Voir la fiche technique →NT5CC256M16CP-FLNA
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NT5CC256M16ER-EK
✅ Remplacement direct✓ En stock
$24 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →K4B4G1646D-BYH9
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$2.3 / unité
Voir la fiche technique →NT5CC256M16DN-FLNA Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4Gb |
| Organisation de la mémoire | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (1.283V-1.45V) |
| Backward Compatible Voltage | 1.5V ±0.075V |
| Débit de données | 1600 Mbps (PC3-12800) |
| Latence CAS | 11 |
| Burst Length | 8 |
| Boîtier | 96-ball FBGA |
| Plage de température de fonctionnement | Commercial: 0°C to +95°C (Tcase), Industrial: -40°C to +95°C (Tcase), Automotive: -40°C to +105°C (Tcase) |
| Interface | 16-bit I/O |
| Refresh | Auto-refresh and self-refresh |
| On-Die Termination (ODT) | Yes |
| DLL | Yes |
| RoHS | Compliant |
Configuration des broches de NT5CC256M16DN-FLNA
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDDQ — I/O power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche A13 | VDD — Power supply |
| Broche A14 | DQ8 — Data input/output 8 |
| Broche A15 | DQ9 — Data input/output 9 |
| Broche A16 | VSS — Ground |
| Broche A17 | DQ10 — Data input/output 10 |
| Broche A18 | DQ11 — Data input/output 11 |
| Broche A19 | VDDQ — I/O power supply |
| Broche A20 | DQ12 — Data input/output 12 |
| Broche A21 | DQ13 — Data input/output 13 |
| Broche A22 | VSS — Ground |
| Broche A23 | DQ14 — Data input/output 14 |
| Broche A24 | DQ15 — Data input/output 15 |
| Broche B1 | VSS — Ground |
| Broche B2 | VDD — Power supply |
| Broche B3 | VSS — Ground |
| Broche B4 | VDD — Power supply |
| Broche B5 | VSS — Ground |
| Broche B6 | VDD — Power supply |
| Broche B7 | VSS — Ground |
| Broche B8 | VDD — Power supply |
| Broche B9 | VSS — Ground |
| Broche B10 | VDD — Power supply |
| Broche B11 | VSS — Ground |
| Broche B12 | VDD — Power supply |
| Broche B13 | VSS — Ground |
| Broche B14 | VDD — Power supply |
| Broche B15 | VSS — Ground |
| Broche B16 | VDD — Power supply |
| Broche B17 | VSS — Ground |
| Broche B18 | VDD — Power supply |
| Broche B19 | VSS — Ground |
| Broche B20 | VDD — Power supply |
| Broche B21 | VSS — Ground |
| Broche B22 | VDD — Power supply |
| Broche B23 | VSS — Ground |
| Broche B24 | VDD — Power supply |
| Broche C1 | A0 — Address input 0 |
| Broche C2 | A1 — Address input 1 |
| Broche C3 | A2 — Address input 2 |
| Broche C4 | A3 — Address input 3 |
| Broche C5 | A4 — Address input 4 |
| Broche C6 | A5 — Address input 5 |
| Broche C7 | A6 — Address input 6 |
| Broche C8 | A7 — Address input 7 |
| Broche C9 | A8 — Address input 8 |
| Broche C10 | A9 — Address input 9 |
| Broche C11 | A10/AP — Address input 10 / Auto-precharge |
| Broche C12 | A11 — Address input 11 |
| Broche C13 | A12 — Address input 12 |
| Broche C14 | A13 — Address input 13 |
| Broche C15 | A14 — Address input 14 |
| Broche C16 | A15 — Address input 15 |
| Broche C17 | BA0 — Bank address 0 |
| Broche C18 | BA1 — Bank address 1 |
| Broche C19 | BA2 — Bank address 2 |
| Broche C20 | RAS# — Row address strobe |
| Broche C21 | CAS# — Column address strobe |
| Broche C22 | WE# — Write enable |
| Broche C23 | CS# — Chip select |
| Broche C24 | ODT — On-die termination |
| Broche D1 | VDDQ — I/O power supply |
| Broche D2 | VSSQ — I/O ground |
| Broche D3 | VDDQ — I/O power supply |
| Broche D4 | VSSQ — I/O ground |
| Broche D5 | VDDQ — I/O power supply |
| Broche D6 | VSSQ — I/O ground |
| Broche D7 | VDDQ — I/O power supply |
| Broche D8 | VSSQ — I/O ground |
| Broche D9 | VDDQ — I/O power supply |
| Broche D10 | VSSQ — I/O ground |
| Broche D11 | VDDQ — I/O power supply |
| Broche D12 | VSSQ — I/O ground |
| Broche D13 | VDDQ — I/O power supply |
| Broche D14 | VSSQ — I/O ground |
| Broche D15 | VDDQ — I/O power supply |
| Broche D16 | VSSQ — I/O ground |
| Broche D17 | VDDQ — I/O power supply |
| Broche D18 | VSSQ — I/O ground |
| Broche D19 | VDDQ — I/O power supply |
| Broche D20 | VSSQ — I/O ground |
| Broche D21 | VDDQ — I/O power supply |
| Broche D22 | VSSQ — I/O ground |
| Broche D23 | VDDQ — I/O power supply |
| Broche D24 | VSSQ — I/O ground |
| Broche E1 | CK — Clock input |
| Broche E2 | CK# — Complementary clock input |
| Broche E3 | CKE — Clock enable |
| Broche E4 | RESET# — Reset |
| Broche E5 | VREFCA — Reference voltage for command/address |
| Broche E6 | VREFDQ — Reference voltage for data |
| Broche E7 | ZQ — Calibration reference |
| Broche E8 | TDQS — Termination data strobe |
| Broche E9 | DM0 — Data mask 0 |
| Broche E10 | DQS0 — Data strobe 0 |
| Broche E11 | DQS0# — Complementary data strobe 0 |
| Broche E12 | DM1 — Data mask 1 |
| Broche E13 | DQS1 — Data strobe 1 |
| Broche E14 | DQS1# — Complementary data strobe 1 |
| Broche E15 | DM2 — Data mask 2 |
| Broche E16 | DQS2 — Data strobe 2 |
| Broche E17 | DQS2# — Complementary data strobe 2 |
| Broche E18 | DM3 — Data mask 3 |
| Broche E19 | DQS3 — Data strobe 3 |
| Broche E20 | DQS3# — Complementary data strobe 3 |
| Broche E21 | VSS — Ground |
| Broche E22 | VDD — Power supply |
| Broche E23 | VSS — Ground |
| Broche E24 | VDD — Power supply |
Applications typiques
NT5CC256M16DN-FLNA convient pour 6 applications: Embedded Computing, Industrial Automation, Automotive Infotainment, Networking Equipment, Consumer Electronics, IoT Gateways.
Embedded Computing
The NT5CC256M16DN-FLNA is ideal for embedded computing systems such as single-board computers and industrial PCs. Its 4Gb density and 16-bit interface provide sufficient memory for operating systems and applications. The low 1.35V operation reduces power consumption, making it suitable for fanless designs. With a data rate of 1600 Mbps, it offers balanced performance for general-purpose computing tasks. The wide temperature range supports industrial environments.
Recommandé
Industrial Automation
In industrial automation, the NT5CC256M16DN-FLNA provides reliable memory for PLCs, HMIs, and robotic controllers. Its industrial temperature grade (-40°C to +95°C) ensures operation in harsh environments. The 1.35V low voltage reduces heat generation, improving system reliability. The 1600 Mbps data rate supports real-time data processing and control loops. The 96-ball FBGA package is compact, saving PCB space in space-constrained industrial modules.
Recommandé
Automotive Infotainment
The NT5CC256M16DN-FLNA is suitable for automotive infotainment systems, including head units and telematics. Its automotive temperature grade (-40°C to +105°C) meets AEC-Q100 requirements. The low voltage operation is compatible with automotive power rails. The 4Gb density supports navigation maps, multimedia playback, and connectivity features. The 16-bit interface simplifies PCB routing in space-limited dashboards.
Recommandé
Networking Equipment
For networking equipment such as routers, switches, and firewalls, the NT5CC256M16DN-FLNA provides high-bandwidth memory for packet buffering and routing tables. Its 1600 Mbps data rate ensures fast data throughput. The low 1.35V operation reduces power consumption in always-on devices. The 4Gb density is adequate for moderate-sized routing tables. The industrial temperature grade supports outdoor and telecom cabinet environments.
Recommandé
Consumer Electronics
The NT5CC256M16DN-FLNA is used in consumer electronics like set-top boxes, smart TVs, and gaming consoles. Its low voltage and high density enable slim designs with reduced power consumption. The 1600 Mbps data rate supports HD video streaming and multitasking. The 96-ball FBGA package is suitable for compact PCBs. The commercial temperature grade covers typical home environments.
Recommandé
IoT Gateways
In IoT gateways, the NT5CC256M16DN-FLNA provides memory for protocol processing, data aggregation, and edge computing. Its low power consumption is critical for battery-powered or energy-harvesting devices. The 4Gb density supports multiple sensor data streams. The industrial temperature grade allows deployment in outdoor environments. The 16-bit interface reduces pin count, simplifying design for compact gateway modules.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5CC256M16DN-FLNA — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5CC256M16ER-FLNA | NT5CC256M16DP-FLNA | NT5CC256M16CP-FLNA | MT41K256M16HA-125 | K4B4G1646D-BYH9 |
|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya Technology Corporation | Nanya Technology Corporation | Nanya Technology Corporation | Nanya Technology Corporation | Micron Technology | Samsung Electronics |
| Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1600 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps |
| CAS Latency | 11 | 13 | 13 | 13 | 11 | 11 |
| Temperature Grade | Commercial, Industrial, Automotive | Commercial, Industrial, Automotive | Commercial, Industrial, Automotive | Commercial, Industrial, Automotive | Commercial, Industrial | Commercial, Industrial |
Principaux différenciateurs
- Wide temperature range (vs MT41K256M16HA-125)
- Lower power consumption (vs K4B4G1646D-BYH9)
- Higher speed grade (vs NT5CC256M16ER-FLNA)
Notes de conception
Ensure stable power supply with proper decoupling. Use 0.1uF ceramic capacitors close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the device. The 1.35V supply should have low ripple to maintain signal integrity. Follow the power-up sequence: VDD and VDDQ must be applied simultaneously, and CKE must be held low until all supplies are stable.
Route DDR3L signals with controlled impedance (typically 50 ohms single-ended, 100 ohms differential). Keep trace lengths matched for DQ, DQS, and address/control signals. Use ground planes to minimize noise. Place the device close to the controller to reduce trace lengths. Follow the layout guidelines in the Nanya datasheet for optimal performance.
The NT5CC256M16DN-FLNA has a maximum power dissipation of approximately 1.5W at 1600 Mbps. Ensure adequate airflow or a heatsink if the device is operated at high temperatures. The thermal resistance (theta_JA) is typically 35°C/W for the FBGA package. Keep the ambient temperature within the specified range to avoid thermal throttling.
Informations de conformité
RoHS compliant per Nanya product page. AEC-Q100 qualified for automotive grade. REACH and conflict minerals status not specified in provided data.
