W634GU6RB-11TR - 4Gb DDR3L SDRAM 933MHz | Winbond
MPN: W634GU6RB-11TR ✓ פעילW634GU6RB-11TR סקירה
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the memory hierarchy in computing systems, serving as the main working memory for processors, and is widely used in laptops, embedded systems, networking equipment, and industrial applications.
Key features of the W634GU6RB-11TR include support for 1.35V operation (with 1.5V compatibility), auto self-refresh, auto precharge, data mask, write leveling, ZQ calibration, asynchronous reset, and dynamic on-chip termination (ODT). These features enhance signal integrity and simplify system design. The device is RoHS compliant and halogen-free, meeting environmental standards.
Technically, the W634GU6RB-11TR uses a 96-ball VFBGA package with a 0.8mm ball pitch, providing excellent thermal and electrical performance. The 933 MHz clock rate enables data rates up to 1866 MT/s, delivering high bandwidth for demanding applications. The device supports a temperature range of -40°C to +95°C, making it suitable for industrial environments.
Typical applications include embedded computing, networking routers and switches, industrial automation, and high-performance consumer electronics. Its low voltage and high density make it ideal for power-sensitive designs.
When designing with this memory, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues at high speeds.
חלופות תחליף ישיר עבור W634GU6RB-11TR — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם W634GU6RB-11TR (אותו גורם צורה וטביעת רגל) — שונים ב Package, Operating Temperature, Supply Voltage, CAS Latency, Data Rate.
W634GU6RB-11
✅ Drop-In✗ אזל מהמלאי
$13.5227 / יחידה
הצג גיליון נתונים ←W634GU6RB12J
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←W634GU6RB-09TR
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←IS43TR16256A-125KBL
✅ Drop-In ⚠️ מפרטים לא מאומתים✗ אזל מהמלאי
$19.0909 / יחידה
הצג גיליון נתונים ←MT41K256M16HA-125
✅ Drop-In ⚠️ מפרטים לא מאומתים✗ אזל מהמלאי
$6.3636 / יחידה
הצג גיליון נתונים ←K4B4G1646D-BYH9
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←H5TC4G63CFR-H9A
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←W634GU6RB-11TR דירוגים מרביים ומאפיינים חשמליים
| סוג זיכרון | DDR3L SDRAM |
| גודל זיכרון | 4Gbit (256M x 16) |
| Clock Frequency | 933 MHz |
| קצב נתונים | 1866 MT/s |
| Access Time | 20 ns |
| מתח אספקה | 1.35V (1.5V compatible) |
| ממשק | Parallel |
| מארז | 96-VFBGA (7.5x13 mm) |
| טמפרטורת פעולה | -40°C to +95°C |
| השהיית CAS | 13 |
| ארגון | 256M x 16 |
| סוג הרכבה | Surface Mount |
| סטטוס RoHS | Compliant |
| נטול הלוגנים | Yes |
| Auto Self-Refresh | Yes |
| Write Leveling | Yes |
| ZQ Calibration | Yes |
| Dynamic ODT | Yes |
תצורת פינים של W634GU6RB-11TR
| פין A1 | VDD — Power supply (1.35V) |
| פין A2 | DQ0 — Data input/output 0 |
| פין A3 | DQ1 — Data input/output 1 |
| פין A4 | VSS — Ground |
| פין A5 | DQ2 — Data input/output 2 |
| פין A6 | DQ3 — Data input/output 3 |
| פין A7 | VDDQ — I/O power supply |
| פין A8 | DQ4 — Data input/output 4 |
| פין A9 | DQ5 — Data input/output 5 |
| פין A10 | VSS — Ground |
| פין A11 | DQ6 — Data input/output 6 |
| פין A12 | DQ7 — Data input/output 7 |
| פין B1 | VSS — Ground |
| פין B2 | DQ8 — Data input/output 8 |
| פין B3 | DQ9 — Data input/output 9 |
| פין B4 | VDD — Power supply |
| פין B5 | DQ10 — Data input/output 10 |
| פין B6 | DQ11 — Data input/output 11 |
| פין B7 | VSS — Ground |
| פין B8 | DQ12 — Data input/output 12 |
| פין B9 | DQ13 — Data input/output 13 |
| פין B10 | VDDQ — I/O power supply |
| פין B11 | DQ14 — Data input/output 14 |
| פין B12 | DQ15 — Data input/output 15 |
| פין C1 | VDDQ — I/O power supply |
| פין C2 | VSS — Ground |
| פין C3 | VDD — Power supply |
| פין C4 | VSS — Ground |
| פין C5 | VDDQ — I/O power supply |
| פין C6 | VSS — Ground |
| פין C7 | VDD — Power supply |
| פין C8 | VSS — Ground |
| פין C9 | VDDQ — I/O power supply |
| פין C10 | VSS — Ground |
| פין C11 | VDD — Power supply |
| פין C12 | VSS — Ground |
| פין D1 | A0 — Address input 0 |
| פין D2 | A1 — Address input 1 |
| פין D3 | A2 — Address input 2 |
| פין D4 | A3 — Address input 3 |
| פין D5 | A4 — Address input 4 |
| פין D6 | A5 — Address input 5 |
| פין D7 | A6 — Address input 6 |
| פין D8 | A7 — Address input 7 |
| פין D9 | A8 — Address input 8 |
| פין D10 | A9 — Address input 9 |
| פין D11 | A10/AP — Address input 10 / Auto-precharge |
| פין D12 | A11 — Address input 11 |
| פין E1 | A12 — Address input 12 |
| פין E2 | A13 — Address input 13 |
| פין E3 | A14 — Address input 14 |
| פין E4 | A15 — Address input 15 |
| פין E5 | BA0 — Bank address 0 |
| פין E6 | BA1 — Bank address 1 |
| פין E7 | BA2 — Bank address 2 |
| פין E8 | RAS# — Row address strobe |
| פין E9 | CAS# — Column address strobe |
| פין E10 | WE# — Write enable |
| פין E11 | CS# — Chip select |
| פין E12 | CKE — Clock enable |
| פין F1 | ODT — On-die termination |
| פין F2 | CK — Clock (positive) |
| פין F3 | CK# — Clock (negative) |
| פין F4 | RESET# — Reset |
| פין F5 | VDD — Power supply |
| פין F6 | VSS — Ground |
| פין F7 | VDDQ — I/O power supply |
| פין F8 | VSS — Ground |
| פין F9 | VDD — Power supply |
| פין F10 | VSS — Ground |
| פין F11 | VDDQ — I/O power supply |
| פין F12 | VSS — Ground |
| פין G1 | DM0 — Data mask 0 |
| פין G2 | DM1 — Data mask 1 |
| פין G3 | VSS — Ground |
| פין G4 | VDD — Power supply |
| פין G5 | VSS — Ground |
| פין G6 | VDDQ — I/O power supply |
| פין G7 | VSS — Ground |
| פין G8 | VDD — Power supply |
| פין G9 | VSS — Ground |
| פין G10 | VDDQ — I/O power supply |
| פין G11 | VSS — Ground |
| פין G12 | VDD — Power supply |
| פין H1 | DQS0 — Data strobe 0 (positive) |
| פין H2 | DQS0# — Data strobe 0 (negative) |
| פין H3 | DQS1 — Data strobe 1 (positive) |
| פין H4 | DQS1# — Data strobe 1 (negative) |
| פין H5 | VDDQ — I/O power supply |
| פין H6 | VSS — Ground |
| פין H7 | VDD — Power supply |
| פין H8 | VSS — Ground |
| פין H9 | VDDQ — I/O power supply |
| פין H10 | VSS — Ground |
| פין H11 | VDD — Power supply |
| פין H12 | VSS — Ground |
| פין J1 | VSS — Ground |
| פין J2 | VDD — Power supply |
| פין J3 | VSS — Ground |
| פין J4 | VDDQ — I/O power supply |
| פין J5 | VSS — Ground |
| פין J6 | VDD — Power supply |
| פין J7 | VSS — Ground |
| פין J8 | VDDQ — I/O power supply |
| פין J9 | VSS — Ground |
| פין J10 | VDD — Power supply |
| פין J11 | VSS — Ground |
| פין J12 | VDDQ — I/O power supply |
יישומים טיפוסיים
W634GU6RB-11TR מתאים עבור 6 יישוםs: Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Automotive Infotainment, Data Center and Cloud Computing.
Embedded Computing
The W634GU6RB-11TR provides 4Gb DDR3L memory in a compact 96-ball VFBGA, ideal for embedded processors and SoCs. Its 1.35V operation reduces power consumption, extending battery life in portable devices. The 1866 MT/s data rate supports high-bandwidth tasks like real-time data processing and multitasking. With a -40°C to +95°C range, it suits industrial embedded systems. The low voltage and high density make it a preferred choice for space-constrained designs.
מומלץ
Networking Equipment
In routers, switches, and network appliances, the W634GU6RB-11TR offers high bandwidth and low latency for packet buffering and forwarding. Its 1866 MT/s data rate ensures fast data throughput, while the 1.35V supply reduces heat generation in dense networking hardware. The 96-ball VFBGA package allows for compact PCB layouts, enabling high port density. The device's auto self-refresh and dynamic ODT features improve signal integrity in high-speed designs, making it suitable for enterprise networking equipment.
מומלץ
Industrial Automation
The W634GU6RB-11TR operates reliably in industrial environments with its -40°C to +95°C temperature range. It provides the memory capacity needed for PLCs, robotics controllers, and HMI systems. The low voltage (1.35V) reduces power dissipation, which is critical in sealed enclosures. The 1866 MT/s data rate supports real-time control loops and data logging. Its robust design and long lifecycle make it suitable for industrial applications requiring high reliability.
מומלץ
Consumer Electronics
For smart TVs, set-top boxes, and gaming consoles, the W634GU6RB-11TR delivers high memory bandwidth for smooth multimedia playback and multitasking. Its 1.35V operation helps meet energy efficiency standards. The compact 96-ball VFBGA package enables slim device designs. The 1866 MT/s data rate supports 4K video processing and responsive user interfaces. The device's low power consumption extends battery life in portable consumer devices.
מומלץ
Automotive Infotainment
The W634GU6RB-11TR is suitable for automotive infotainment systems, providing high memory bandwidth for navigation, audio, and video applications. Its 1.35V operation reduces power consumption, important for vehicle electrical systems. The -40°C to +95°C range covers automotive temperature requirements. The 96-ball VFBGA package withstands vibration and thermal cycling. However, for AEC-Q100 compliance, consider automotive-grade alternatives like IS43TR16256AL-125KBLI-TR.
מומלץ
Data Center and Cloud Computing
In servers and storage systems, the W634GU6RB-11TR provides high-density memory for virtualization and cloud workloads. Its 1866 MT/s data rate ensures fast data access, while the 1.35V supply reduces power consumption in large-scale deployments. The 96-ball VFBGA package allows for high memory density on server boards. The device's reliability and long lifecycle make it suitable for 24/7 operation in data centers.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור W634GU6RB-11TR — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | W634GU6RB-11 | IS43TR16256A-125KBL | MT41K256M16HA-125 | K4B4G1646D-BYH9 | H5TC4G63CFR-H9A |
|---|---|---|---|---|---|---|
| Package | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) |
| Brand | Winbond Electronics | Winbond Electronics | ISSI | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Clock Frequency | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Automotive Grade | No | No | No | No | No | No |
מבדילים עיקריים
- Wide temperature range (-40°C to +95°C) (לעומתIS43TR16256A-125KBL)
- Low voltage operation (1.35V) (לעומתMT41K256M16HA-125)
- Halogen-free and RoHS compliant (לעומתK4B4G1646D-BYH9)
הערות תכנון
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command lines. Use a solid ground plane and minimize vias to reduce signal reflections. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Winbond datasheet for the 96-ball VFBGA package.
The W634GU6RB-11TR operates at 1.35V, which is lower than standard DDR3's 1.5V. Ensure the power supply can provide adequate current during burst operations. Use a dedicated voltage regulator with low output noise and fast transient response. Consider using a 1.35V supply with 1.5V compatibility for flexibility.
The 96-ball VFBGA package has a thermal resistance of approximately 20°C/W (typical). For high ambient temperature applications, ensure adequate airflow or a thermal pad to dissipate heat. The operating temperature range is -40°C to +95°C, so verify the junction temperature stays within limits under worst-case conditions.
מידע על תאימות
Winbond states all Flash products are RoHS compliant and halogen-free; this likely applies to DDR SDRAM as well. AEC-Q100 not mentioned in data.
