W634GU6RB-11TR - 4Gb DDR3L SDRAM 933MHz | Winbond
MPN: W634GU6RB-11TR ✓ نشطW634GU6RB-11TR نظرة عامة
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the memory hierarchy in computing systems, serving as the main working memory for processors, and is widely used in laptops, embedded systems, networking equipment, and industrial applications.
Key features of the W634GU6RB-11TR include support for 1.35V operation (with 1.5V compatibility), auto self-refresh, auto precharge, data mask, write leveling, ZQ calibration, asynchronous reset, and dynamic on-chip termination (ODT). These features enhance signal integrity and simplify system design. The device is RoHS compliant and halogen-free, meeting environmental standards.
Technically, the W634GU6RB-11TR uses a 96-ball VFBGA package with a 0.8mm ball pitch, providing excellent thermal and electrical performance. The 933 MHz clock rate enables data rates up to 1866 MT/s, delivering high bandwidth for demanding applications. The device supports a temperature range of -40°C to +95°C, making it suitable for industrial environments.
Typical applications include embedded computing, networking routers and switches, industrial automation, and high-performance consumer electronics. Its low voltage and high density make it ideal for power-sensitive designs.
When designing with this memory, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues at high speeds.
بدائل مباشرة لـ W634GU6RB-11TR — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع W634GU6RB-11TR (نفس عامل الشكل والبصمة) — يختلف في Package, Operating Temperature, Supply Voltage, CAS Latency, Data Rate.
W634GU6RB-11
✅ بديل مباشر✗ غير متوفر
$13.5227 / وحدة
عرض ورقة البيانات ←W634GU6RB12J
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←W634GU6RB-09TR
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←IS43TR16256A-125KBL
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$19.0909 / وحدة
عرض ورقة البيانات ←MT41K256M16HA-125
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$6.3636 / وحدة
عرض ورقة البيانات ←K4B4G1646D-BYH9
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5TC4G63CFR-H9A
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←W634GU6RB-11TR الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| حجم الذاكرة | 4Gbit (256M x 16) |
| Clock Frequency | 933 MHz |
| معدل البيانات | 1866 MT/s |
| Access Time | 20 ns |
| جهد التغذية | 1.35V (1.5V compatible) |
| الواجهة | Parallel |
| العلبة | 96-VFBGA (7.5x13 mm) |
| درجة حرارة التشغيل | -40°C to +95°C |
| زمن الوصول CAS | 13 |
| التنظيم | 256M x 16 |
| نوع التركيب | Surface Mount |
| حالة RoHS | Compliant |
| خالٍ من الهالوجين | Yes |
| Auto Self-Refresh | Yes |
| Write Leveling | Yes |
| ZQ Calibration | Yes |
| Dynamic ODT | Yes |
تكوين أطراف W634GU6RB-11TR
| دبوس A1 | VDD — Power supply (1.35V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس A5 | DQ2 — Data input/output 2 |
| دبوس A6 | DQ3 — Data input/output 3 |
| دبوس A7 | VDDQ — I/O power supply |
| دبوس A8 | DQ4 — Data input/output 4 |
| دبوس A9 | DQ5 — Data input/output 5 |
| دبوس A10 | VSS — Ground |
| دبوس A11 | DQ6 — Data input/output 6 |
| دبوس A12 | DQ7 — Data input/output 7 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ8 — Data input/output 8 |
| دبوس B3 | DQ9 — Data input/output 9 |
| دبوس B4 | VDD — Power supply |
| دبوس B5 | DQ10 — Data input/output 10 |
| دبوس B6 | DQ11 — Data input/output 11 |
| دبوس B7 | VSS — Ground |
| دبوس B8 | DQ12 — Data input/output 12 |
| دبوس B9 | DQ13 — Data input/output 13 |
| دبوس B10 | VDDQ — I/O power supply |
| دبوس B11 | DQ14 — Data input/output 14 |
| دبوس B12 | DQ15 — Data input/output 15 |
| دبوس C1 | VDDQ — I/O power supply |
| دبوس C2 | VSS — Ground |
| دبوس C3 | VDD — Power supply |
| دبوس C4 | VSS — Ground |
| دبوس C5 | VDDQ — I/O power supply |
| دبوس C6 | VSS — Ground |
| دبوس C7 | VDD — Power supply |
| دبوس C8 | VSS — Ground |
| دبوس C9 | VDDQ — I/O power supply |
| دبوس C10 | VSS — Ground |
| دبوس C11 | VDD — Power supply |
| دبوس C12 | VSS — Ground |
| دبوس D1 | A0 — Address input 0 |
| دبوس D2 | A1 — Address input 1 |
| دبوس D3 | A2 — Address input 2 |
| دبوس D4 | A3 — Address input 3 |
| دبوس D5 | A4 — Address input 4 |
| دبوس D6 | A5 — Address input 5 |
| دبوس D7 | A6 — Address input 6 |
| دبوس D8 | A7 — Address input 7 |
| دبوس D9 | A8 — Address input 8 |
| دبوس D10 | A9 — Address input 9 |
| دبوس D11 | A10/AP — Address input 10 / Auto-precharge |
| دبوس D12 | A11 — Address input 11 |
| دبوس E1 | A12 — Address input 12 |
| دبوس E2 | A13 — Address input 13 |
| دبوس E3 | A14 — Address input 14 |
| دبوس E4 | A15 — Address input 15 |
| دبوس E5 | BA0 — Bank address 0 |
| دبوس E6 | BA1 — Bank address 1 |
| دبوس E7 | BA2 — Bank address 2 |
| دبوس E8 | RAS# — Row address strobe |
| دبوس E9 | CAS# — Column address strobe |
| دبوس E10 | WE# — Write enable |
| دبوس E11 | CS# — Chip select |
| دبوس E12 | CKE — Clock enable |
| دبوس F1 | ODT — On-die termination |
| دبوس F2 | CK — Clock (positive) |
| دبوس F3 | CK# — Clock (negative) |
| دبوس F4 | RESET# — Reset |
| دبوس F5 | VDD — Power supply |
| دبوس F6 | VSS — Ground |
| دبوس F7 | VDDQ — I/O power supply |
| دبوس F8 | VSS — Ground |
| دبوس F9 | VDD — Power supply |
| دبوس F10 | VSS — Ground |
| دبوس F11 | VDDQ — I/O power supply |
| دبوس F12 | VSS — Ground |
| دبوس G1 | DM0 — Data mask 0 |
| دبوس G2 | DM1 — Data mask 1 |
| دبوس G3 | VSS — Ground |
| دبوس G4 | VDD — Power supply |
| دبوس G5 | VSS — Ground |
| دبوس G6 | VDDQ — I/O power supply |
| دبوس G7 | VSS — Ground |
| دبوس G8 | VDD — Power supply |
| دبوس G9 | VSS — Ground |
| دبوس G10 | VDDQ — I/O power supply |
| دبوس G11 | VSS — Ground |
| دبوس G12 | VDD — Power supply |
| دبوس H1 | DQS0 — Data strobe 0 (positive) |
| دبوس H2 | DQS0# — Data strobe 0 (negative) |
| دبوس H3 | DQS1 — Data strobe 1 (positive) |
| دبوس H4 | DQS1# — Data strobe 1 (negative) |
| دبوس H5 | VDDQ — I/O power supply |
| دبوس H6 | VSS — Ground |
| دبوس H7 | VDD — Power supply |
| دبوس H8 | VSS — Ground |
| دبوس H9 | VDDQ — I/O power supply |
| دبوس H10 | VSS — Ground |
| دبوس H11 | VDD — Power supply |
| دبوس H12 | VSS — Ground |
| دبوس J1 | VSS — Ground |
| دبوس J2 | VDD — Power supply |
| دبوس J3 | VSS — Ground |
| دبوس J4 | VDDQ — I/O power supply |
| دبوس J5 | VSS — Ground |
| دبوس J6 | VDD — Power supply |
| دبوس J7 | VSS — Ground |
| دبوس J8 | VDDQ — I/O power supply |
| دبوس J9 | VSS — Ground |
| دبوس J10 | VDD — Power supply |
| دبوس J11 | VSS — Ground |
| دبوس J12 | VDDQ — I/O power supply |
التطبيقات النموذجية
W634GU6RB-11TR مناسب لـ 6 التطبيقs: Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Automotive Infotainment, Data Center and Cloud Computing.
Embedded Computing
The W634GU6RB-11TR provides 4Gb DDR3L memory in a compact 96-ball VFBGA, ideal for embedded processors and SoCs. Its 1.35V operation reduces power consumption, extending battery life in portable devices. The 1866 MT/s data rate supports high-bandwidth tasks like real-time data processing and multitasking. With a -40°C to +95°C range, it suits industrial embedded systems. The low voltage and high density make it a preferred choice for space-constrained designs.
موصى به
Networking Equipment
In routers, switches, and network appliances, the W634GU6RB-11TR offers high bandwidth and low latency for packet buffering and forwarding. Its 1866 MT/s data rate ensures fast data throughput, while the 1.35V supply reduces heat generation in dense networking hardware. The 96-ball VFBGA package allows for compact PCB layouts, enabling high port density. The device's auto self-refresh and dynamic ODT features improve signal integrity in high-speed designs, making it suitable for enterprise networking equipment.
موصى به
Industrial Automation
The W634GU6RB-11TR operates reliably in industrial environments with its -40°C to +95°C temperature range. It provides the memory capacity needed for PLCs, robotics controllers, and HMI systems. The low voltage (1.35V) reduces power dissipation, which is critical in sealed enclosures. The 1866 MT/s data rate supports real-time control loops and data logging. Its robust design and long lifecycle make it suitable for industrial applications requiring high reliability.
موصى به
Consumer Electronics
For smart TVs, set-top boxes, and gaming consoles, the W634GU6RB-11TR delivers high memory bandwidth for smooth multimedia playback and multitasking. Its 1.35V operation helps meet energy efficiency standards. The compact 96-ball VFBGA package enables slim device designs. The 1866 MT/s data rate supports 4K video processing and responsive user interfaces. The device's low power consumption extends battery life in portable consumer devices.
موصى به
Automotive Infotainment
The W634GU6RB-11TR is suitable for automotive infotainment systems, providing high memory bandwidth for navigation, audio, and video applications. Its 1.35V operation reduces power consumption, important for vehicle electrical systems. The -40°C to +95°C range covers automotive temperature requirements. The 96-ball VFBGA package withstands vibration and thermal cycling. However, for AEC-Q100 compliance, consider automotive-grade alternatives like IS43TR16256AL-125KBLI-TR.
موصى به
Data Center and Cloud Computing
In servers and storage systems, the W634GU6RB-11TR provides high-density memory for virtualization and cloud workloads. Its 1866 MT/s data rate ensures fast data access, while the 1.35V supply reduces power consumption in large-scale deployments. The 96-ball VFBGA package allows for high memory density on server boards. The device's reliability and long lifecycle make it suitable for 24/7 operation in data centers.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ W634GU6RB-11TR — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | W634GU6RB-11 | IS43TR16256A-125KBL | MT41K256M16HA-125 | K4B4G1646D-BYH9 | H5TC4G63CFR-H9A |
|---|---|---|---|---|---|---|
| Package | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) |
| Brand | Winbond Electronics | Winbond Electronics | ISSI | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Clock Frequency | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Automotive Grade | No | No | No | No | No | No |
أبرز الفروقات
- Wide temperature range (-40°C to +95°C) (مقابلIS43TR16256A-125KBL)
- Low voltage operation (1.35V) (مقابلMT41K256M16HA-125)
- Halogen-free and RoHS compliant (مقابلK4B4G1646D-BYH9)
ملاحظات التصميم
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command lines. Use a solid ground plane and minimize vias to reduce signal reflections. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Winbond datasheet for the 96-ball VFBGA package.
The W634GU6RB-11TR operates at 1.35V, which is lower than standard DDR3's 1.5V. Ensure the power supply can provide adequate current during burst operations. Use a dedicated voltage regulator with low output noise and fast transient response. Consider using a 1.35V supply with 1.5V compatibility for flexibility.
The 96-ball VFBGA package has a thermal resistance of approximately 20°C/W (typical). For high ambient temperature applications, ensure adequate airflow or a thermal pad to dissipate heat. The operating temperature range is -40°C to +95°C, so verify the junction temperature stays within limits under worst-case conditions.
معلومات الامتثال
Winbond states all Flash products are RoHS compliant and halogen-free; this likely applies to DDR SDRAM as well. AEC-Q100 not mentioned in data.
