2EDN7524GXTMA1 vs 2ED21064S06JXUMA1 तुलना
विस्तृत दोनों ओर की तुलना 2EDN7524GXTMA1 द्वारा Infineon और 2ED21064S06JXUMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 ✓ सक्रियInfineon
2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
2ED21064S06JXUMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | 2EDN7524GXTMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | Power MOSFET Drivers | Power MOSFET Drivers |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Product Type | Low-side gate driver IC | — |
| Number of Channels | 2 (dual) | — |
| Drive Current (Source/Sink) | 5 A peak | — |
| Input Logic | Non-inverting, TTL / 3.3 V CMOS-compatible | — |
| Input Voltage Tolerance | -10 V to +20 V on logic pins | — |
| Supply Voltage (VCC) | 4.5 V to 20 V [DATA_NEEDED: exact range] | 10 V to 20 V |
| Propagation Delay | 20 ns typical [DATA_NEEDED: exact figure] | — |
| Channel-to-Channel Delay Matching | 1 ns | — |
| राइज़ टाइम | 5 ns typical [DATA_NEEDED: exact test condition] | — |
| फॉल टाइम | 5 ns typical [DATA_NEEDED: exact test condition] | — |
| Output Stage | Rail-to-rail, separate source/sink | — |
| UVLO Protection | Yes | — |
| ऑपरेटिंग तापमान | -40 C to +125 C | -40C to +125C |
| पैकेज | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad | PG-DSO-14 (14-pin SOIC) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| MSL स्तर | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| RoHS स्थिति | Compliant | ROHS3 Compliant |
| Target Devices | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs | — |
| फ़ंक्शन | — | High-Side and Low-Side Gate Driver |
| Configuration | — | Half-Bridge (2 outputs, non-inverting) |
| टोपोलॉजी | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| Negative Gate Drive Robustness | — | -0.7 V |