2EDN7524GXTMA1 vs 2ED21064S06JXUMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma 2EDN7524GXTMA1 tarafından Infineon ve 2ED21064S06JXUMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre 2EDN7524GXTMA1 2ED21064S06JXUMA1
Marka Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Yaşam Döngüsü Durumu Aktif Aktif
Product Type Low-side gate driver IC —
Number of Channels 2 (dual) —
Drive Current (Source/Sink) 5 A peak —
Input Logic Non-inverting, TTL / 3.3 V CMOS-compatible —
Input Voltage Tolerance -10 V to +20 V on logic pins —
Supply Voltage (VCC) 4.5 V to 20 V [DATA_NEEDED: exact range] 10 V to 20 V
Propagation Delay 20 ns typical [DATA_NEEDED: exact figure] —
Channel-to-Channel Delay Matching 1 ns —
Artış Süresi 5 ns typical [DATA_NEEDED: exact test condition] —
Düşüş Süresi 5 ns typical [DATA_NEEDED: exact test condition] —
Output Stage Rail-to-rail, separate source/sink —
UVLO Protection Yes —
İşletim Sıcaklığı -40 C to +125 C -40C to +125C
Paket PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad PG-DSO-14 (14-pin SOIC)
Montaj Türü Surface Mount Surface Mount
MSL Seviyesi [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS Durumu Compliant ROHS3 Compliant
Target Devices Standard MOSFETs, superjunction MOSFETs, GaN HEMTs —
Fonksiyon — High-Side and Low-Side Gate Driver
Configuration — Half-Bridge (2 outputs, non-inverting)
Ağ Yapısı — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Bootstrap Diode — Integrated
Input Logic Compatibility — 3.3 V / 5 V CMOS
Negative Gate Drive Robustness — -0.7 V

Dökümanlar & Kaynaklar

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