CGD65B130S2 vs CGD65A130S2 तुलना
विस्तृत दोनों ओर की तुलना CGD65B130S2 द्वारा Cambridge GaN Devices और CGD65A130S2 द्वारा Cambridge GaN Devices. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Cambridge GaN Devices
CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65B130S2 ✓ सक्रियCambridge GaN Devices
CGD65A130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65A130S2 ✓ सक्रियविशेषता तुलना
| पैरामीटर | CGD65B130S2 | CGD65A130S2 |
|---|---|---|
| ब्रांड | Cambridge GaN Devices | Cambridge GaN Devices |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| ट्रांज़िस्टर प्रकार | GaN HEMT (enhancement mode, N-channel) | — |
| Drain-Source Voltage (VDS) | 650 V | — |
| On-Resistance (RDS(on)) | 130 mΩ (typical) | — |
| Continuous Drain Current (ID) | 12 A | [DATA_NEEDED: continuous ID at 25°C and 100°C] |
| Gate Technology | ICeGaN™ (standard-driver compatible) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero) | 0 nC (GaN - negligible) |
| पैकेज | 8-DFN 5x6 mm with exposed thermal pad | DFN-16 (8 × 8 mm) with exposed pad |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| ऑपरेटिंग तापमान | -55 °C to +150 °C (junction) | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge at VGS=10V] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | [DATA_NEEDED: Coss value at VDS=400V] |
| Rise Time / Fall Time | Sub-nanosecond (per datasheet typical application) | — |
| MSL स्तर | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS स्थिति | Compliant | Compliant |
| Substrate Technology | GaN-on-silicon | — |
| Technology | — | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) |
| Drain-Source Voltage (VDS, max) | — | 650 V |
| On-State Resistance (RDS(on)) | — | 130 mΩ (typ) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Gate Charge (Qg, total) | — | [DATA_NEEDED: Qg typical value] |
| Gate-Source Voltage Rating | — | ±20 V (ICeGaN robust gate; see datasheet) |
| ऑपरेटिंग जंक्शन तापमान | — | -40°C to +150°C |
| Integrated Features | — | Current sense, Miller clamp (NL³), ICeGaN gate |