CGD65B130S2 vs CGD65A130S2 比較
詳細並排比較 CGD65B130S2 由 Cambridge GaN Devices 與 CGD65A130S2 由 Cambridge GaN Devices. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | CGD65B130S2 | CGD65A130S2 |
|---|---|---|
| 品牌 | Cambridge GaN Devices | Cambridge GaN Devices |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| 電晶體類型 | GaN HEMT (enhancement mode, N-channel) | — |
| Drain-Source Voltage (VDS) | 650 V | — |
| On-Resistance (RDS(on)) | 130 mΩ (typical) | — |
| Continuous Drain Current (ID) | 12 A | [DATA_NEEDED: continuous ID at 25°C and 100°C] |
| Gate Technology | ICeGaN™ (standard-driver compatible) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero) | 0 nC (GaN - negligible) |
| 封裝 | 8-DFN 5x6 mm with exposed thermal pad | DFN-16 (8 × 8 mm) with exposed pad |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55 °C to +150 °C (junction) | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge at VGS=10V] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | [DATA_NEEDED: Coss value at VDS=400V] |
| Rise Time / Fall Time | Sub-nanosecond (per datasheet typical application) | — |
| MSL 等級 | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS 狀態 | Compliant | Compliant |
| Substrate Technology | GaN-on-silicon | — |
| Technology | — | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) |
| Drain-Source Voltage (VDS, max) | — | 650 V |
| On-State Resistance (RDS(on)) | — | 130 mΩ (typ) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Gate Charge (Qg, total) | — | [DATA_NEEDED: Qg typical value] |
| Gate-Source Voltage Rating | — | ±20 V (ICeGaN robust gate; see datasheet) |
| 工作接面溫度 | — | -40°C to +150°C |
| Integrated Features | — | Current sense, Miller clamp (NL³), ICeGaN gate |