CGD65B130S2 vs CGD65A130S2 Perbandingan
Perbandingan bersamaan detil CGD65B130S2 dari Cambridge GaN Devices dan CGD65A130S2 dari Cambridge GaN Devices. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | CGD65B130S2 | CGD65A130S2 |
|---|---|---|
| Merek | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| Tipe Transistor | GaN HEMT (enhancement mode, N-channel) | — |
| Drain-Source Voltage (VDS) | 650 V | — |
| On-Resistance (RDS(on)) | 130 mΩ (typical) | — |
| Continuous Drain Current (ID) | 12 A | [DATA_NEEDED: continuous ID at 25°C and 100°C] |
| Gate Technology | ICeGaN™ (standard-driver compatible) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero) | 0 nC (GaN - negligible) |
| Paket | 8-DFN 5x6 mm with exposed thermal pad | DFN-16 (8 × 8 mm) with exposed pad |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55 °C to +150 °C (junction) | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge at VGS=10V] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | [DATA_NEEDED: Coss value at VDS=400V] |
| Rise Time / Fall Time | Sub-nanosecond (per datasheet typical application) | — |
| Level MSL | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Substrate Technology | GaN-on-silicon | — |
| Technology | — | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) |
| Drain-Source Voltage (VDS, max) | — | 650 V |
| On-State Resistance (RDS(on)) | — | 130 mΩ (typ) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Gate Charge (Qg, total) | — | [DATA_NEEDED: Qg typical value] |
| Gate-Source Voltage Rating | — | ±20 V (ICeGaN robust gate; see datasheet) |
| Suhu Hubung Kerja | — | -40°C to +150°C |
| Integrated Features | — | Current sense, Miller clamp (NL³), ICeGaN gate |