CGD65B130S2 vs CGD65A130S2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng CGD65B130S2 sa pamamagitan ng Cambridge GaN Devices at CGD65A130S2 sa pamamagitan ng Cambridge GaN Devices. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Cambridge GaN Devices
CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65B130S2 ✓ NakahandaCambridge GaN Devices
CGD65A130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65A130S2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | CGD65B130S2 | CGD65A130S2 |
|---|---|---|
| Brand | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| Uri ng Transistor | GaN HEMT (enhancement mode, N-channel) | — |
| Drain-Source Voltage (VDS) | 650 V | — |
| On-Resistance (RDS(on)) | 130 mΩ (typical) | — |
| Continuous Drain Current (ID) | 12 A | [DATA_NEEDED: continuous ID at 25°C and 100°C] |
| Gate Technology | ICeGaN™ (standard-driver compatible) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero) | 0 nC (GaN - negligible) |
| Packhaging | 8-DFN 5x6 mm with exposed thermal pad | DFN-16 (8 × 8 mm) with exposed pad |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55 °C to +150 °C (junction) | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge at VGS=10V] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | [DATA_NEEDED: Coss value at VDS=400V] |
| Rise Time / Fall Time | Sub-nanosecond (per datasheet typical application) | — |
| Level ng MSL | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | Compliant |
| Substrate Technology | GaN-on-silicon | — |
| Technology | — | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) |
| Drain-Source Voltage (VDS, max) | — | 650 V |
| On-State Resistance (RDS(on)) | — | 130 mΩ (typ) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Gate Charge (Qg, total) | — | [DATA_NEEDED: Qg typical value] |
| Gate-Source Voltage Rating | — | ±20 V (ICeGaN robust gate; see datasheet) |
| Temperature ng Junction na Operasyon | — | -40°C to +150°C |
| Integrated Features | — | Current sense, Miller clamp (NL³), ICeGaN gate |