IRFS4321TRRPBF vs IRFS4321TRLPBF तुलना
विस्तृत दोनों ओर की तुलना IRFS4321TRRPBF द्वारा Infineon और IRFS4321TRLPBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRFS4321TRRPBF | IRFS4321TRLPBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | IR HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID) at 25C | 85 A (Tc) | — |
| Continuous Drain Current (ID) at 100C | [DATA_NEEDED: ID at 100C] | — |
| RDS(on) Maximum at VGS=10V | 15 mOhm | — |
| Total Gate Charge (Qg) | 71 nC | — |
| Gate-to-Source Voltage Maximum | +/- 30 V | — |
| Power Dissipation (PD) | 350 W (Tc) | — |
| ऑपरेटिंग जंक्शन तापमान | -55C to +175C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | 0.65 C/W (end of life, D2PAK) | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA] | — |
| पैकेज | D2PAK (TO-263), 3-pin (2+Tab) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Avalanche Energy Rating | Single-pulse avalanche rated (per datasheet) | — |
| Lead-Free / RoHS Status | Lead-Free (PBF suffix), RoHS Compliant | — |
| MSL स्तर | [DATA_NEEDED: MSL Level] | — |
| Continuous Drain Current (ID) at Tc=25C | — | 85 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | — | 15 mOhm |
| RDS(on) Max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) Typ | — | 71 nC |
| Total Gate Charge (Qg) Max | — | 110 nC |
| Power Dissipation (PD) at Tc=25C | — | 350 W |
| Thermal Resistance Junction-to-Case (RθJC) Max | — | 0.45 C/W |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | — | 0.65 C/W (after 1000 cycles -55C to +150C) |
| RoHS स्थिति | — | Compliant |