IRFS4321TRRPBF vs IRFS4321TRLPBF 比較

詳細並排比較 IRFS4321TRRPBF 由 Infineon 與 IRFS4321TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFS4321TRRPBF IRFS4321TRRPBF - 150V 83A N-Channel HEXFET MOSFET | Infineon

IRFS4321TRRPBF - 150V 83A N-Channel HEXFET MOSFET | Infineon

IRFS4321TRRPBF ✓ 啟用中

規格比較

參數 IRFS4321TRRPBF IRFS4321TRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel MOSFET N-Channel MOSFET, Metal Oxide
Technology HEXFET (IR MOSFET) IR HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at 25C 85 A (Tc) —
Continuous Drain Current (ID) at 100C [DATA_NEEDED: ID at 100C] —
RDS(on) Maximum at VGS=10V 15 mOhm —
Total Gate Charge (Qg) 71 nC —
Gate-to-Source Voltage Maximum +/- 30 V —
Power Dissipation (PD) 350 W (Tc) —
工作接面溫度 -55C to +175C -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) 0.65 C/W (end of life, D2PAK) —
Thermal Resistance Junction-to-Ambient (RthJA) [DATA_NEEDED: RthJA] —
封裝 D2PAK (TO-263), 3-pin (2+Tab) TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
安裝類型 Surface Mount Surface Mount
Avalanche Energy Rating Single-pulse avalanche rated (per datasheet) —
Lead-Free / RoHS Status Lead-Free (PBF suffix), RoHS Compliant —
MSL 等級 [DATA_NEEDED: MSL Level] —
Continuous Drain Current (ID) at Tc=25C — 85 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) Max at VGS=10V — 15 mOhm
RDS(on) Max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-to-Source Voltage (VGS) Max — ±20 V
Gate Threshold Voltage (VGS(th)) Typ — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) Typ — 71 nC
Total Gate Charge (Qg) Max — 110 nC
Power Dissipation (PD) at Tc=25C — 350 W
Thermal Resistance Junction-to-Case (RθJC) Max — 0.45 C/W
Thermal Resistance Junction-to-Case (RθJC) End-of-Life — 0.65 C/W (after 1000 cycles -55C to +150C)
RoHS 狀態 — Compliant

資料表與資源

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