NVMFS6B25NLT1G vs BSC0901NSATMA1 तुलना
विस्तृत दोनों ओर की तुलना NVMFS6B25NLT1G द्वारा onsemi और BSC0901NSATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | NVMFS6B25NLT1G | BSC0901NSATMA1 |
|---|---|---|
| ब्रांड | onsemi | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TA=25°C | 8 A | — |
| Continuous Drain Current (ID) at TC=25°C | 33 A | — |
| Drain-to-Source On-Resistance RDS(on) max @ VGS=10V | 24 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | — |
| Power Dissipation at TA=25°C | 3.6 W | — |
| Power Dissipation at TC=25°C | 62 W | — |
| Series | Automotive, AEC-Q101 | — |
| पैकेज | 5-DFN (5x6) 8-SOFL, surface mount | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| ऑपरेटिंग तापमान रेंज | -55°C to +175°C | -55C to +150C |
| RoHS स्थिति | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| नमी संवेदनशीलता स्तर (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |