NVMFS6B25NLT1G vs BSC0901NSATMA1 Perbandingan

Perbandingan bersamaan detil NVMFS6B25NLT1G dari onsemi dan BSC0901NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum NVMFS6B25NLT1G BSC0901NSATMA1
Merek onsemi Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) N-Channel Trench MOSFET (OptiMOS)
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TA=25°C 8 A —
Continuous Drain Current (ID) at TC=25°C 33 A —
Drain-to-Source On-Resistance RDS(on) max @ VGS=10V 24 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Drive Voltage (Max RDS(on), Min RDS(on)) 4.5 V, 10 V —
Power Dissipation at TA=25°C 3.6 W —
Power Dissipation at TC=25°C 62 W —
Series Automotive, AEC-Q101 —
Paket 5-DFN (5x6) 8-SOFL, surface mount TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55°C to +175°C -55C to +150C
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — OptiMOS 30V
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 100 A
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
Tingkat Sensitivitas Kekeringan (MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

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