NVMFS6B25NLT1G vs BSC0901NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci NVMFS6B25NLT1G disebabkan oleh onsemi dan BSC0901NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr NVMFS6B25NLT1G BSC0901NSATMA1
Merek onsemi Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) N-Channel Trench MOSFET (OptiMOS)
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TA=25°C 8 A —
Continuous Drain Current (ID) at TC=25°C 33 A —
Drain-to-Source On-Resistance RDS(on) max @ VGS=10V 24 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Drive Voltage (Max RDS(on), Min RDS(on)) 4.5 V, 10 V —
Power Dissipation at TA=25°C 3.6 W —
Power Dissipation at TC=25°C 62 W —
Series Automotive, AEC-Q101 —
Kemasan 5-DFN (5x6) 8-SOFL, surface mount TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +175°C -55C to +150C
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — OptiMOS 30V
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 100 A
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
Tingkat sensitiviti Air Nama (MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

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