UCC21521DWR vs UCC21550BDWR तुलना
विस्तृत दोनों ओर की तुलना UCC21521DWR द्वारा Texas Instruments और UCC21550BDWR द्वारा Texas Instruments. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ सक्रियविशेषता तुलना
| पैरामीटर | UCC21521DWR | UCC21550BDWR |
|---|---|---|
| ब्रांड | Texas Instruments | Texas Instruments |
| श्रेणी | Power MOSFET Drivers | Power MOSFET Drivers |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Channel Count | 2 | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Rating | 5700 Vrms | — |
| CMTI | 100 V/ns (minimum) | — |
| Propagation Delay | 19 ns (typical) | — |
| Delay Matching | 5 ns (maximum) | — |
| Pulse-Width Distortion | 6 ns (maximum) | — |
| Minimum Pulse Width | 10 ns | — |
| Max Switching Frequency | 5 MHz | — |
| Isolation Technology | Capacitive coupling | — |
| Input Threshold | TTL and CMOS compatible (3.3 V logic) | — |
| Enable / Disable Pin | Yes (DIS) | — |
| ऑपरेटिंग तापमान | -40C to +125C | — |
| पैकेज | SOIC-16 (DW) | 16-SOIC (DW) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Configurations | Dual low-side, dual high-side, or half-bridge | — |
| RoHS स्थिति | Compliant | [DATA_NEEDED: RoHS status] |
| आउटपुट कॉन्फ़िगरेशन | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Isolation Type | — | Capacitive coupling, reinforced isolation |
| Isolation Voltage | — | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |
| Disable Function | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |