UCC21521DWR vs UCC21550BDWR Perbandingan
Perbandingan bersamaan detil UCC21521DWR dari Texas Instruments dan UCC21550BDWR dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | UCC21521DWR | UCC21550BDWR |
|---|---|---|
| Merek | Texas Instruments | Texas Instruments |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Channel Count | 2 | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Rating | 5700 Vrms | — |
| CMTI | 100 V/ns (minimum) | — |
| Propagation Delay | 19 ns (typical) | — |
| Delay Matching | 5 ns (maximum) | — |
| Pulse-Width Distortion | 6 ns (maximum) | — |
| Minimum Pulse Width | 10 ns | — |
| Max Switching Frequency | 5 MHz | — |
| Isolation Technology | Capacitive coupling | — |
| Input Threshold | TTL and CMOS compatible (3.3 V logic) | — |
| Enable / Disable Pin | Yes (DIS) | — |
| Suhu Kerja | -40C to +125C | — |
| Paket | SOIC-16 (DW) | 16-SOIC (DW) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configurations | Dual low-side, dual high-side, or half-bridge | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Konfigurasi Output | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Isolation Type | — | Capacitive coupling, reinforced isolation |
| Isolation Voltage | — | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |
| Disable Function | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |