UCC21521DWR vs UCC21550BDWR 比較

詳細並排比較 UCC21521DWR 由 Texas Instruments 與 UCC21550BDWR 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
UCC21521DWR UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521DWR ✓ 啟用中
Texas Instruments
UCC21550BDWR UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR ✓ 啟用中

規格比較

參數 UCC21521DWR UCC21550BDWR
品牌 Texas Instruments Texas Instruments
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Channel Count 2 —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Rating 5700 Vrms —
CMTI 100 V/ns (minimum) —
Propagation Delay 19 ns (typical) —
Delay Matching 5 ns (maximum) —
Pulse-Width Distortion 6 ns (maximum) —
Minimum Pulse Width 10 ns —
Max Switching Frequency 5 MHz —
Isolation Technology Capacitive coupling —
Input Threshold TTL and CMOS compatible (3.3 V logic) —
Enable / Disable Pin Yes (DIS) —
工作溫度 -40C to +125C —
封裝 SOIC-16 (DW) 16-SOIC (DW)
安裝類型 Surface Mount Surface Mount
Configurations Dual low-side, dual high-side, or half-bridge —
RoHS 狀態 Compliant [DATA_NEEDED: RoHS status]
輸出配置 — Dual-channel (dual low-side, dual high-side, or half-bridge)
Isolation Type — Capacitive coupling, reinforced isolation
Isolation Voltage — 5000 Vrms
CMTI (Common-Mode Transient Immunity) — > 125 V/ns
VDD Output Supply Range — Up to 25 V
UVLO Threshold — 8 V (VDD UVLO)
Programmable Dead Time — Yes
Disable Function — Yes
Junction Temperature Range — -40 C to +150 C
Driven Devices — Power MOSFET, SiC MOSFET, GaN FET, IGBT

資料表與資源

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