UCC21521DWR vs UCC21550BDWR Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci UCC21521DWR disebabkan oleh Texas Instruments dan UCC21550BDWR disebabkan oleh Texas Instruments. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Texas Instruments
UCC21521DWR UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521DWR ✓ Aktif

Pengandingan Spesifikasi

Parametr UCC21521DWR UCC21550BDWR
Merek Texas Instruments Texas Instruments
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Channel Count 2 —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Rating 5700 Vrms —
CMTI 100 V/ns (minimum) —
Propagation Delay 19 ns (typical) —
Delay Matching 5 ns (maximum) —
Pulse-Width Distortion 6 ns (maximum) —
Minimum Pulse Width 10 ns —
Max Switching Frequency 5 MHz —
Isolation Technology Capacitive coupling —
Input Threshold TTL and CMOS compatible (3.3 V logic) —
Enable / Disable Pin Yes (DIS) —
Suhu Operasi -40C to +125C —
Kemasan SOIC-16 (DW) 16-SOIC (DW)
Jenis Pemasangan Surface Mount Surface Mount
Configurations Dual low-side, dual high-side, or half-bridge —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Konfigurasi Output — Dual-channel (dual low-side, dual high-side, or half-bridge)
Isolation Type — Capacitive coupling, reinforced isolation
Isolation Voltage — 5000 Vrms
CMTI (Common-Mode Transient Immunity) — > 125 V/ns
VDD Output Supply Range — Up to 25 V
UVLO Threshold — 8 V (VDD UVLO)
Programmable Dead Time — Yes
Disable Function — Yes
Junction Temperature Range — -40 C to +150 C
Driven Devices — Power MOSFET, SiC MOSFET, GaN FET, IGBT

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga