ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
MPN: ISC151N08NM6ATMA1 ✓ सक्रियISC151N08NM6ATMA1 अवलोकन
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an electric field at the gate to conduct current between drain and source terminals. N-channel MOSFETs like the ISC151N08NM6 are the dominant switching element in modern DC-DC converters, motor drives, and load switches because their low on-resistance minimizes conduction loss. Within the taxonomy, this part belongs to the discrete semiconductor family, specifically the OptiMOS 6 80 V medium-voltage tier, optimized for synchronous rectification and primary-side switching.
Key features include 9.2 A continuous drain current at TA=25 °C, 37 A at TC=25 °C, 3 W power dissipation at TA and 48 W at TC, a 3.5 V typical gate threshold voltage, and a logic-level compatible gate drive. The PG-TDSON-8 FL package provides an exposed pad that drops thermal resistance to the PCB copper pour, enabling compact designs without an external heatsink at moderate duty cycles.
The OptiMOS 6 platform uses Infineon's latest trench cell architecture to balance low RDS(on), low gate charge (Qg), and low output charge (Qoss). These figures directly impact switching loss and dead-time requirements in half-bridge topologies, allowing higher switching frequencies and smaller magnetics in downstream converters.
Typical applications include 48 V telecom isolated DC-DC bus converters, battery management system (BMS) protection FETs, synchronous rectifier stages in server and telecom supplies, hot-swap / eFuse controllers, and motor drive half-bridges in industrial automation. The combination of 80 V rating and 15 mΩ RDS(on) places it in the sweet spot for 24 V/36 V/48 V bus architectures.
When designing with this part, ensure the gate drive produces at least 10 V VGS to fully enhance the channel and minimize RDS(on); a 4.7 Ω to 10 Ω gate resistor typically damps parasitic ringing. Keep the source-loop and gate-loop PCB areas minimal to control voltage overshoot and EMI.
This page synthesizes distributor pricing, drop-in alternatives from Infineon and competitors, and practical design notes not found in the manufacturer datasheet.
के लिए ड्रॉप-इन विकल्प ISC151N08NM6ATMA1 — समान पैकेज, पिन-टू-पिन संगत। PCB रीवर्क आवश्यक करने वाले भिन्न-पैकेज पार्ट्स शामिल नहीं हैं।
इस सीरीज़ के वेरिएंट
समान श्रृंखला के मॉडल जो ड्रॉप-इन संगत हैं ISC151N08NM6ATMA1 (समान फॉर्म फैक्टर और फुटप्रिंट) — इसमें भिन्न Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Product Family.
ISC037N12NM6ATMA1
✅ ड्रॉप-इनकीमत के लिए संपर्क करें
डेटाशीट देखें →ISZ230N10NM6ATMA1
✅ ड्रॉप-इनकीमत के लिए संपर्क करें
डेटाशीट देखें →ISC015N06NM5LF2ATMA1
✅ ड्रॉप-इनकीमत के लिए संपर्क करें
डेटाशीट देखें →ISC151N08NM6ATMA1 Maximum Ratings और Electrical Characteristics
| ट्रांज़िस्टर प्रकार | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (TA=25°C) | 9.2 A |
| कंटीन्यूअस ड्रेन करंट (TC=25°C) | 37 A |
| Power Dissipation (TA) | 3 W |
| Power Dissipation (TC) | 48 W |
| On-Resistance RDS(on) max | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | 3.5 V |
| Technology | OptiMOS 6 |
| पैकेज | PG-TDSON-8 FL |
| माउंटिंग प्रकार | Surface Mount |
| पिन की संख्या | 8 |
| Channel Mode | Enhancement |
| ऑपरेटिंग तापमान | -55 °C to +175 °C |
| RoHS स्थिति | Compliant |
ISC151N08NM6ATMA1 पिन कॉन्फ़िगरेशन
| पिन 1 | GATE — Gate drive input |
| पिन 2 | DRAIN — Drain terminal (connected to exposed pad) |
| पिन 3 | DRAIN — Drain terminal (connected to exposed pad) |
| पिन 4 | NC — Not connected (per datasheet) |
| पिन 5 | SOURCE — Source terminal |
| पिन 6 | SOURCE — Source terminal |
| पिन 7 | DRAIN — Drain terminal (connected to exposed pad) |
| पिन 8 | DRAIN — Drain terminal (connected to exposed pad) |
ISC151N08NM6 सुरक्षित संचालन क्षेत्र (DC)
सामान्य अनुप्रयोग
ISC151N08NM6ATMA1 के लिए उपयुक्त है 6 अनुप्रयोगs: 48 V Telecom Isolated DC-DC Converter, Battery Management System (BMS) Protection FET, Synchronous Rectifier in Server PSU, Hot-Swap / eFuse Controller Switch, Industrial Motor Drive Half-Bridge, Solar Micro-Inverter / Power Optimizer.
48 V Telecom Isolated DC-DC Converter
The ISC151N08NM6ATMA1 fits primary-side switching in 48 V telecom isolated DC-DC converters because its 80 V VDS rating provides >66% headroom above the 48 V nominal bus, comfortably absorbing transients from cable inductance and load steps. With 15.1 mΩ RDS(on) and 37 A continuous drain current at TC, it handles full-load currents typical of 600-1200 W brick converters without exceeding thermal limits when properly heat-sunk. Placed on the primary-side high-voltage rail of a half-bridge or full-bridge topology, the device's OptiMOS 6 low Qg and Qoss reduce switching loss enough to support 100-200 kHz switching, shrinking the isolation transformer footprint. Compared with older 80 V MOSFETs, the >24% lower RDS(on) cuts conduction loss across the load range, directly improving converter efficiency at 50% load where telecom operators typically measure.
अनुशंसित
Battery Management System (BMS) Protection FET
The ISC151N08NM6ATMA1 serves as a low-side protection FET in 48 V Li-ion battery management systems where its 80 V VDS rating handles pack voltages up to 56 V with margin, and its 37 A continuous current supports 1.5-2 kW discharge paths without active cooling. The 15.1 mΩ RDS(on) dissipates under 1 W at 8 A continuous load, allowing operation without heatsink in sealed battery enclosures. Infineon's OptiMOS 6 cell technology provides avalanche-rated SOA critical for short-circuit events, while the PG-TDSON-8 FL package's exposed pad simplifies thermal coupling to the inner copper layer of the BMS PCB. Designers should add a TVS diode across drain-source for inductive kick protection during disconnect events.
अनुशंसित
Synchronous Rectifier in Server PSU
The ISC151N08NM6ATMA1 is used as the synchronous rectifier FET on the secondary side of 48 V-to-12 V server power supply units, replacing Schottky diodes to gain a >1.5% efficiency boost across the load curve. Its 80 V VDS rating exceeds typical 12 V rails by 6x margin, ensuring robustness during transient ringing and load-dump events on the secondary side. The 15.1 mΩ RDS(on) at VGS=10 V keeps conduction loss under 0.5 W at 6 A output, while OptiMOS 6's body-diode reverse recovery characteristics minimize dead-time loss in CCM operation. Layout tip: minimize the source-loop inductance between this FET and the primary-side control IC gate driver to prevent gate overshoot.
अनुशंसित
Hot-Swap / eFuse Controller Switch
The ISC151N08NM6ATMA1 acts as the main pass element in 48 V hot-swap and eFuse circuits where its 80 V VDS handles inrush transients and backplane faults. The 37 A continuous current rating supports 1.5-2 kW board-level power feeds common in telecom and server backplanes, while the 15.1 mΩ RDS(on) keeps steady-state dissipation manageable. Infineon's OptiMOS 6 SOA in linear mode allows the FET to dissipate fault energy for several milliseconds during current-limit foldback, simplifying eFuse controller design. Add a current-sense resistor and TVS clamp across drain-source for full hot-swap protection.
अनुशंसित
Industrial Motor Drive Half-Bridge
The ISC151N08NM6ATMA1 is deployed in the low-side or high-side position of 48 V industrial motor drive half-bridges for AGVs, robotics, and small servo drives. With 37 A continuous current and 80 V VDS rating, it handles 1-2 kW motor power with margin, while the 15.1 mΩ RDS(on) limits conduction loss during PWM operation at 20-50 kHz switching frequencies. The PG-TDSON-8 FL package's low thermal resistance enables direct PCB cooling without external heatsink in compact industrial designs. Designers should include a gate-source resistor (10-100 kΩ) to prevent unintended turn-on from Miller current during the opposite FET's switching edge.
अनुशंसित
Solar Micro-Inverter / Power Optimizer
The ISC151N08NM6ATMA1 fits as the switching element in 60-80 V solar micro-inverter and DC power optimizer stages where its 80 V VDS rating handles open-circuit PV panel voltages up to ~50 V with adequate derating margin. The 15.1 mΩ RDS(on) and OptiMOS 6 trench cell technology deliver >98% peak efficiency in synchronous buck-boost topologies, while the PG-TDSON-8 FL package's exposed pad enables efficient bottom-side cooling in IP67 outdoor enclosures. For higher-power strings, parallel multiple ISC151N08NM6ATMA1 devices with matched gate-drive timing to share current without thermal runaway.
अनुशंसित
अनुशंसित उत्पादों का सारांश
के लिए इंजीनियरिंग संदर्भ डेटा ISC151N08NM6ATMA1 — तुलना, डिज़ाइन मार्गदर्शन और अनुपालन जानकारी।
चयन गाइड
विकल्पों के साथ तुलना
| पैरामीटर | यह उत्पाद | ISC037N12NM6ATMA1 | ISZ230N10NM6ATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 FL | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same |
| Drain-Source Voltage (VDS) | 80 V | 120 V | 100 V | 60 V |
| Technology | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
मुख्य विशेषताएँ
- OptiMOS 6 platform with >24% lower RDS(on) than prior generation (बनामISC037N12NM6ATMA1)
- Wide VDS margin at 80 V for 48 V telecom buses (बनामISC015N06NM5LF2ATMA1)
- PG-TDSON-8 FL package with exposed thermal pad (बनामBSC019N08NS5ATMA1)
डिज़ाइन नोट्स
Estimated: at continuous TC=25 °C with 48 W power dissipation and Infineon's published PG-TDSON-8 FL thermal resistance of ~50 °C/W junction-to-case, the junction temperature reaches the 175 °C maximum with only ~25 °C margin. Designers must de-rate to TC=85 °C or lower for reliability (industry rule: keep Tj ≤ 125 °C at full load). Mount the exposed pad onto a copper area of at least 100 mm² with thermal vias to the inner layer for proper heat extraction. The 3 W ambient rating implies the device dissipates only ~3 W before reaching Tj=150 °C in still air without a heatsink - always check thermal in actual PCB geometry.
Minimize the source-loop inductance between the ISC151N08NM6ATMA1 source pins and the gate-driver ground return to prevent gate overshoot and ringing during switching transients. Use a 4.7 Ω to 10 Ω gate resistor to damp parasitic oscillation without slowing the switching edge excessively. Keep the drain-source snubber loop area under 10 mm² to limit VDS overshoot below 100 V (20% above the 80 V rating) during hard turn-off events.
Do not operate the ISC151N08NM6ATMA1 with VGS below 8 V - the RDS(on) specification of 15.1 mΩ assumes VGS=10 V. At VGS=4.5 V the device may still turn on but RDS(on) increases 2-3x, causing thermal runaway in high-current designs. Add a 10-100 kΩ gate-source resistor to prevent unintended turn-on from Miller current during the complementary FET's switching edge in half-bridge topologies. Finally, verify that the exposed pad is properly soldered - a dry joint can increase thermal resistance by 30-50%.
अनुपालन जानकारी
RoHS compliant per Infineon product page and DigiKey listing. Standard grade - not AEC-Q100 qualified; for automotive designs use AEC-Q100 qualified OptiMOS 6 variants. REACH compliance per EU declaration.
