1ED3127MU12FXUMA1 vs 1ED3124MC12HXUMA1 Perbandingan

Perbandingan bersamaan detil 1ED3127MU12FXUMA1 dari Infineon dan 1ED3124MC12HXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1ED3127MU12FXUMA1 1ED3124MC12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Single-channel isolated gate driver —
Jumlah Output 1 1
Konfigurasi Output High-side / Low-side, Inverting / Non-Inverting —
Peak Output Current 10 A (source/sink) —
Continuous Output Current 9 A —
Supply Voltage (VCC2 secondary) 12 V to 35 V —
Supply Voltage (VCC1 primary) 3 V to 5.5 V —
Propagation Delay (typ.) 15 ns —
Delay Matching (typ.) 30 ns —
Galvanic Isolation 3000 Vrms (coreless transformer) —
Rentang Suhu Kerja -40C to +125C —
Protection Features Miller clamp, UVLO, DESAT short-circuit protection —
Paket PG-DSO-8-72 (SOIC-8 wide-body) PG-DSO-8 (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Drives IGBT, MOSFET, SiC MOSFET —
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Number of Drivers — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
Waktu naik — 15 ns
Waktu Menurun — 30 ns
Suhu Kerja — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

Spek dan Sumber

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