1ED3127MU12FXUMA1 vs 1ED3124MC12HXUMA1 比較
詳細並排比較 1ED3127MU12FXUMA1 由 Infineon 與 1ED3124MC12HXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 1ED3127MU12FXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 功能 | Single-channel isolated gate driver | — |
| 輸出數量 | 1 | 1 |
| 輸出配置 | High-side / Low-side, Inverting / Non-Inverting | — |
| Peak Output Current | 10 A (source/sink) | — |
| Continuous Output Current | 9 A | — |
| Supply Voltage (VCC2 secondary) | 12 V to 35 V | — |
| Supply Voltage (VCC1 primary) | 3 V to 5.5 V | — |
| Propagation Delay (typ.) | 15 ns | — |
| Delay Matching (typ.) | 30 ns | — |
| Galvanic Isolation | 3000 Vrms (coreless transformer) | — |
| 工作溫度範圍 | -40C to +125C | — |
| Protection Features | Miller clamp, UVLO, DESAT short-circuit protection | — |
| 封裝 | PG-DSO-8-72 (SOIC-8 wide-body) | PG-DSO-8 (DSO-8) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| Drives | IGBT, MOSFET, SiC MOSFET | — |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| 上升時間 | — | 15 ns |
| 下降時間 | — | 30 ns |
| 工作溫度 | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |