1EDB7275FXUMA1 vs 1ED3124MU12HXUMA1 Perbandingan

Perbandingan bersamaan detil 1EDB7275FXUMA1 dari Infineon dan 1ED3124MU12HXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDB7275FXUMA1 1ED3124MU12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Single-channel isolated gate driver IC Single-channel isolated gate driver IC
Topology Supported High-side / low-side, half-bridge (with two parts) —
Isolation Technology Coreless transformer (CT) magnetic coupling Coreless transformer (CT)
Isolation Voltage (Viso) 3000 Vrms —
Common-Mode Transient Immunity (CMTI) 300 V/ns (minimum) 200 kV/us minimum
Peak Source Output Current 5.4 A (typical) —
Peak Sink Output Current 9.8 A (typical) —
Propagation Delay +6 / -4 ns (typical, see datasheet family) —
Supported Switch Technologies Si MOSFET, SiC MOSFET, GaN HEMT —
Paket PG-DSO-8 (150 mil DSO, 8-pin) PG-DSO-8-66 (DSO-8 wide-body)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: full operating temperature range] -40C to +125C
UVLO Protection Yes (secondary side) —
Marking Code 1B7275A —
Status RoHS Compliant Compliant
Manufacturer Family — EiceDRIVER Compact 1ED31xxMU12H (X3 compact)
Peak Output Current (source/sink) — 14 A typical
Konfigurasi Output — Separate source and sink pins
Galvanic Isolation (rms) — 5.7 kV (UL 1577)
Working Voltage (continuous) — 1200 V
Propagation Delay (typ.) — 90 ns
UVLO Threshold — 10.5 V
Creepage Distance — >8 mm
Target Switch Types — IGBT, power MOSFET, SiC MOSFET
Recommended Switch Class — Up to 2300 V IGBT / SiC modules
Level MSL — MSL2 (per JEDEC J-STD-020)

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