1EDI60H12AHXUMA1 vs 1ED3124MC12HXUMA1 Perbandingan
Perbandingan bersamaan detil 1EDI60H12AHXUMA1 dari Infineon dan 1ED3124MC12HXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
1EDI60H12AHXUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | 1EDI60H12AHXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Product Type | Single-channel high-side gate driver IC | — |
| Isolation Technology | Galvanic isolation via coreless transformer | Magnetic coupling (coreless transformer) |
| Isolation Voltage Rating | 1200 V | — |
| Number of Channels | 1 | — |
| Peak Source Current (typ.) | 10.0 A | — |
| Peak Sink Current (typ.) | 9.4 A | — |
| Konfigurasi Output | Separate source and sink (SEP) outputs | — |
| Input Compatibility | CMOS / TTL logic | — |
| Driven Device | IGBT (and MOSFET / SiC compatible) | — |
| Paket | PG-DSO-8-59 (DSO-8 with 8 mm creepage) | PG-DSO-8 (DSO-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Creepage Distance | 8 mm | — |
| Short-Circuit Protection | Short-circuit clamping | — |
| Level MSL | 2 (1 year floor life) | — |
| Status RoHS | Compliant | Compliant |
| Suhu Kerja | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] | -40 C to +125 C |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Jumlah Output | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Waktu naik | — | 15 ns |
| Waktu Menurun | — | 30 ns |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |