1EDI60H12AHXUMA1 vs 1ED3124MC12HXUMA1 Perbandingan

Perbandingan bersamaan detil 1EDI60H12AHXUMA1 dari Infineon dan 1ED3124MC12HXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDI60H12AHXUMA1 1ED3124MC12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Single-channel high-side gate driver IC —
Isolation Technology Galvanic isolation via coreless transformer Magnetic coupling (coreless transformer)
Isolation Voltage Rating 1200 V —
Number of Channels 1 —
Peak Source Current (typ.) 10.0 A —
Peak Sink Current (typ.) 9.4 A —
Konfigurasi Output Separate source and sink (SEP) outputs —
Input Compatibility CMOS / TTL logic —
Driven Device IGBT (and MOSFET / SiC compatible) —
Paket PG-DSO-8-59 (DSO-8 with 8 mm creepage) PG-DSO-8 (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Creepage Distance 8 mm —
Short-Circuit Protection Short-circuit clamping —
Level MSL 2 (1 year floor life) —
Status RoHS Compliant Compliant
Suhu Kerja -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] -40 C to +125 C
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Number of Drivers — 1
Jumlah Output — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
Waktu naik — 15 ns
Waktu Menurun — 30 ns
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

Spek dan Sumber

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