1EDI60H12AHXUMA1 vs 1ED3124MC12HXUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDI60H12AHXUMA1 disebabkan oleh Infineon dan 1ED3124MC12HXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
1EDI60H12AHXUMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | 1EDI60H12AHXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Product Type | Single-channel high-side gate driver IC | — |
| Isolation Technology | Galvanic isolation via coreless transformer | Magnetic coupling (coreless transformer) |
| Isolation Voltage Rating | 1200 V | — |
| Number of Channels | 1 | — |
| Peak Source Current (typ.) | 10.0 A | — |
| Peak Sink Current (typ.) | 9.4 A | — |
| Konfigurasi Output | Separate source and sink (SEP) outputs | — |
| Input Compatibility | CMOS / TTL logic | — |
| Driven Device | IGBT (and MOSFET / SiC compatible) | — |
| Kemasan | PG-DSO-8-59 (DSO-8 with 8 mm creepage) | PG-DSO-8 (DSO-8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Creepage Distance | 8 mm | — |
| Short-Circuit Protection | Short-circuit clamping | — |
| Aras MSL | 2 (1 year floor life) | — |
| Status RoHS | Compliant | Compliant |
| Suhu Operasi | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] | -40 C to +125 C |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Bilangan Output | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Masa Pertambahan | — | 15 ns |
| Masa jatuh | — | 30 ns |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |