1EDI60H12AHXUMA1 vs 1ED3124MC12HXUMA1 比較
詳細並排比較 1EDI60H12AHXUMA1 由 Infineon 與 1ED3124MC12HXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
1EDI60H12AHXUMA1 ✓ 啟用中
規格比較
| 參數 | 1EDI60H12AHXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Product Type | Single-channel high-side gate driver IC | — |
| Isolation Technology | Galvanic isolation via coreless transformer | Magnetic coupling (coreless transformer) |
| Isolation Voltage Rating | 1200 V | — |
| Number of Channels | 1 | — |
| Peak Source Current (typ.) | 10.0 A | — |
| Peak Sink Current (typ.) | 9.4 A | — |
| 輸出配置 | Separate source and sink (SEP) outputs | — |
| Input Compatibility | CMOS / TTL logic | — |
| Driven Device | IGBT (and MOSFET / SiC compatible) | — |
| 封裝 | PG-DSO-8-59 (DSO-8 with 8 mm creepage) | PG-DSO-8 (DSO-8) |
| 安裝類型 | Surface Mount | Surface Mount |
| Creepage Distance | 8 mm | — |
| Short-Circuit Protection | Short-circuit clamping | — |
| MSL 等級 | 2 (1 year floor life) | — |
| RoHS 狀態 | Compliant | Compliant |
| 工作溫度 | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] | -40 C to +125 C |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| 輸出數量 | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| 上升時間 | — | 15 ns |
| 下降時間 | — | 30 ns |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |