1EDN7511B vs 1EDN8511BXUSA1 Perbandingan

Perbandingan bersamaan detil 1EDN7511B dari Infineon dan 1EDN8511BXUSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDN7511B 1EDN8511BXUSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Single-channel low-side gate driver —
Number of Channels 1 —
Peak Source Current 4 A 4 A
Peak Sink Current 8 A 8 A
Supply Voltage (VCC) 4.5 V to 20 V —
UVLO Threshold (logic-level variant) 1.9 V to 2.3 V —
UVLO Threshold (normal-level variant) 800 mV to 1.2 V (typ) —
Propagation Delay 4.5 ns (typ) —
Rise Time (typ) 19 ns —
Fall Time (typ) 19 ns —
Output On-Resistance (pull-up) 0.85 ohm —
Output On-Resistance (pull-down) 0.35 ohm —
Input Logic Inverting + Non-inverting —
Suhu Kerja -40 C to +150 C —
Paket SOT-23-6 (PG-SOT23-6-2) PG-SOT23-6-2
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Supported Switches MOSFET (OptiMOS, CoolMOS), GaN HEMT —
Channel Count — 1
Driver Configuration — Low-side
Input Stage — Inverting and non-inverting
Propagation Delay Accuracy — [DATA_NEEDED: typical propagation delay]
UVLO Threshold — 8 V
Driver Supply Voltage (VCC) — [DATA_NEEDED: VCC range upper limit]
Suhu Hubung Kerja — -40 °C to +150 °C
Jumlah Pin — 6
Logic Input Compatibility — TTL / CMOS
Target Switch Type — Power MOSFET, GaN HEMT
Level MSL — [DATA_NEEDED: MSL rating]

Spek dan Sumber

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