1EDN7511B vs 1EDN8511BXUSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7511B disebabkan oleh Infineon dan 1EDN8511BXUSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 1EDN7511B | 1EDN8511BXUSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Driver Type | Single-channel low-side gate driver | — |
| Number of Channels | 1 | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 8 A | 8 A |
| Supply Voltage (VCC) | 4.5 V to 20 V | — |
| UVLO Threshold (logic-level variant) | 1.9 V to 2.3 V | — |
| UVLO Threshold (normal-level variant) | 800 mV to 1.2 V (typ) | — |
| Propagation Delay | 4.5 ns (typ) | — |
| Rise Time (typ) | 19 ns | — |
| Fall Time (typ) | 19 ns | — |
| Output On-Resistance (pull-up) | 0.85 ohm | — |
| Output On-Resistance (pull-down) | 0.35 ohm | — |
| Input Logic | Inverting + Non-inverting | — |
| Suhu Operasi | -40 C to +150 C | — |
| Kemasan | SOT-23-6 (PG-SOT23-6-2) | PG-SOT23-6-2 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Supported Switches | MOSFET (OptiMOS, CoolMOS), GaN HEMT | — |
| Channel Count | — | 1 |
| Driver Configuration | — | Low-side |
| Input Stage | — | Inverting and non-inverting |
| Propagation Delay Accuracy | — | [DATA_NEEDED: typical propagation delay] |
| UVLO Threshold | — | 8 V |
| Driver Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range upper limit] |
| Suhu Hubungan Operasi | — | -40 °C to +150 °C |
| Kiraan Pin | — | 6 |
| Logic Input Compatibility | — | TTL / CMOS |
| Target Switch Type | — | Power MOSFET, GaN HEMT |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |