1EDN7550BXTSA1 vs 2ED2108S06FXUMA1 Perbandingan

Perbandingan bersamaan detil 1EDN7550BXTSA1 dari Infineon dan 2ED2108S06FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDN7550BXTSA1 2ED2108S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Single-channel, high-side / low-side Half-Bridge
Input Type Non-inverting, truly differential —
Peak Source Current 4 A —
Peak Sink Current 8 A —
Supply Voltage (VDD max) 84 V —
Minimum Input Pulse Width 29 ns —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay value] [DATA_NEEDED: propagation delay ns]
Input Common-Mode Range Up to 150 V —
Channel-to-Channel Matching 1.0 ns typ. —
Internal Regulator 4.7 V on input side —
Logic Input Compatibility TTL / CMOS —
Under-Voltage Lockout (UVLO) Yes —
Suhu Hubung Kerja -40 °C to +150 °C —
Paket PG-SOT23-6 (SOT-23-6) PG-DSO-8-53 (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant Compliant
Number of Drivers — 1
Gate Type — N-Channel MOSFET, IGBT
Jumlah Output — 2 (high-side + low-side)
Logic Input — Non-Inverting
Input Voltage (VCC) — 10 V to 20 V
High-Side Bootstrap Voltage Rating — 650 V
Peak Source Current (typ.) — 0.29 A
Peak Sink Current (typ.) — 0.7 A
Integrated Bootstrap Diode — Yes
Undervoltage Lockout (UVLO) — Yes (VCC and VB)
Rise / Fall Time (typ.) — [DATA_NEEDED: tr/tf ns]
Suhu Kerja — -40 C to +125 C

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