1EDN7550BXTSA1 vs 2ED2108S06FXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7550BXTSA1 disebabkan oleh Infineon dan 2ED2108S06FXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN7550BXTSA1 2ED2108S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Single-channel, high-side / low-side Half-Bridge
Input Type Non-inverting, truly differential —
Peak Source Current 4 A —
Peak Sink Current 8 A —
Supply Voltage (VDD max) 84 V —
Minimum Input Pulse Width 29 ns —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay value] [DATA_NEEDED: propagation delay ns]
Input Common-Mode Range Up to 150 V —
Channel-to-Channel Matching 1.0 ns typ. —
Internal Regulator 4.7 V on input side —
Logic Input Compatibility TTL / CMOS —
Under-Voltage Lockout (UVLO) Yes —
Suhu Hubungan Operasi -40 °C to +150 °C —
Kemasan PG-SOT23-6 (SOT-23-6) PG-DSO-8-53 (DSO-8)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant Compliant
Number of Drivers — 1
Gate Type — N-Channel MOSFET, IGBT
Bilangan Output — 2 (high-side + low-side)
Logic Input — Non-Inverting
Input Voltage (VCC) — 10 V to 20 V
High-Side Bootstrap Voltage Rating — 650 V
Peak Source Current (typ.) — 0.29 A
Peak Sink Current (typ.) — 0.7 A
Integrated Bootstrap Diode — Yes
Undervoltage Lockout (UVLO) — Yes (VCC and VB)
Rise / Fall Time (typ.) — [DATA_NEEDED: tr/tf ns]
Suhu Operasi — -40 C to +125 C

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