1EDN7550BXTSA1 vs 2ED2108S06FXUMA1 比較

詳細並排比較 1EDN7550BXTSA1 由 Infineon 與 2ED2108S06FXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2108S06FXUMA1 2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 ✓ 啟用中

規格比較

參數 1EDN7550BXTSA1 2ED2108S06FXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration Single-channel, high-side / low-side Half-Bridge
Input Type Non-inverting, truly differential —
Peak Source Current 4 A —
Peak Sink Current 8 A —
Supply Voltage (VDD max) 84 V —
Minimum Input Pulse Width 29 ns —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay value] [DATA_NEEDED: propagation delay ns]
Input Common-Mode Range Up to 150 V —
Channel-to-Channel Matching 1.0 ns typ. —
Internal Regulator 4.7 V on input side —
Logic Input Compatibility TTL / CMOS —
Under-Voltage Lockout (UVLO) Yes —
工作接面溫度 -40 °C to +150 °C —
封裝 PG-SOT23-6 (SOT-23-6) PG-DSO-8-53 (DSO-8)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL level] 1
RoHS 狀態 Compliant Compliant
Number of Drivers — 1
Gate Type — N-Channel MOSFET, IGBT
輸出數量 — 2 (high-side + low-side)
Logic Input — Non-Inverting
Input Voltage (VCC) — 10 V to 20 V
High-Side Bootstrap Voltage Rating — 650 V
Peak Source Current (typ.) — 0.29 A
Peak Sink Current (typ.) — 0.7 A
Integrated Bootstrap Diode — Yes
Undervoltage Lockout (UVLO) — Yes (VCC and VB)
Rise / Fall Time (typ.) — [DATA_NEEDED: tr/tf ns]
工作溫度 — -40 C to +125 C

資料表與資源

瀏覽所有產品 建立 BOM 索取報價