2ED2103S06FXUMA1 vs 2EDB7259KXUMA1 Perbandingan

Perbandingan bersamaan detil 2ED2103S06FXUMA1 dari Infineon dan 2EDB7259KXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2103S06FXUMA1 2EDB7259KXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-Bridge Gate Driver —
Configuration Non-Inverting —
Technology High-Voltage Level Shift (SOI) Coreless Transformer Isolation
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Paket PG-DSO-8-69 (DSO-8 with exposed pad) 13-LGA (5x5 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -40C to +125C —
Level MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant Compliant
Product Type — Isolated Gate Driver IC
Number of Channels — 2
Source Drive Current — 5 A
Sink Drive Current — 9 A
Isolation Voltage — 2500 Vrms
Common-Mode Transient Immunity (CMTI) — 150 V/ns
Propagation Delay — 38 ns
Tegangan Pemuat — 12 V to 18 V
Suhu Kerja — -40C to +125C
Protection Features — UVLO, Short-Circuit, Miller Clamp
Output Stage — Rail-to-rail p-channel sourcing

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon