2ED2103S06FXUMA1 vs 2EDB7259KXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2ED2103S06FXUMA1 sa pamamagitan ng Infineon at 2EDB7259KXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2ED2103S06FXUMA1 2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2ED2103S06FXUMA1 2EDB7259KXUMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Fungsi Half-Bridge Gate Driver —
Configuration Non-Inverting —
Technology High-Voltage Level Shift (SOI) Coreless Transformer Isolation
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Packhaging PG-DSO-8-69 (DSO-8 with exposed pad) 13-LGA (5x5 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -40C to +125C —
Level ng MSL [DATA_NEEDED: MSL level] —
Tindminan RoHS Compliant Compliant
Product Type — Isolated Gate Driver IC
Number of Channels — 2
Source Drive Current — 5 A
Sink Drive Current — 9 A
Isolation Voltage — 2500 Vrms
Common-Mode Transient Immunity (CMTI) — 150 V/ns
Propagation Delay — 38 ns
Volte ng Pagbibigay — 12 V to 18 V
Temperature na Operasyon — -40C to +125C
Protection Features — UVLO, Short-Circuit, Miller Clamp
Output Stage — Rail-to-rail p-channel sourcing

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