2ED2103S06FXUMA1 vs 2EDB7259KXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2ED2103S06FXUMA1 disebabkan oleh Infineon dan 2EDB7259KXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2ED2103S06FXUMA1 2EDB7259KXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-Bridge Gate Driver —
Configuration Non-Inverting —
Technology High-Voltage Level Shift (SOI) Coreless Transformer Isolation
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Kemasan PG-DSO-8-69 (DSO-8 with exposed pad) 13-LGA (5x5 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -40C to +125C —
Aras MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant Compliant
Product Type — Isolated Gate Driver IC
Number of Channels — 2
Source Drive Current — 5 A
Sink Drive Current — 9 A
Isolation Voltage — 2500 Vrms
Common-Mode Transient Immunity (CMTI) — 150 V/ns
Propagation Delay — 38 ns
Tegangan Pemberi Arus — 12 V to 18 V
Suhu Operasi — -40C to +125C
Protection Features — UVLO, Short-Circuit, Miller Clamp
Output Stage — Rail-to-rail p-channel sourcing

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