2ED2103S06FXUMA1 vs 2EDB7259KXUMA1 比較

詳細並排比較 2ED2103S06FXUMA1 由 Infineon 與 2EDB7259KXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2103S06FXUMA1 2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 ✓ 啟用中

規格比較

參數 2ED2103S06FXUMA1 2EDB7259KXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Half-Bridge Gate Driver —
Configuration Non-Inverting —
Technology High-Voltage Level Shift (SOI) Coreless Transformer Isolation
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
封裝 PG-DSO-8-69 (DSO-8 with exposed pad) 13-LGA (5x5 mm)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40C to +125C —
MSL 等級 [DATA_NEEDED: MSL level] —
RoHS 狀態 Compliant Compliant
Product Type — Isolated Gate Driver IC
Number of Channels — 2
Source Drive Current — 5 A
Sink Drive Current — 9 A
Isolation Voltage — 2500 Vrms
Common-Mode Transient Immunity (CMTI) — 150 V/ns
Propagation Delay — 38 ns
供應電壓 — 12 V to 18 V
工作溫度 — -40C to +125C
Protection Features — UVLO, Short-Circuit, Miller Clamp
Output Stage — Rail-to-rail p-channel sourcing

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