2ED21834S06JXUMA1 vs 1EDI20N12AFXUMA1 Perbandingan

Perbandingan bersamaan detil 2ED21834S06JXUMA1 dari Infineon dan 1EDI20N12AFXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED21834S06JXUMA1 1EDI20N12AFXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC —
Configuration Half-bridge (high-side + low-side) —
Maximum Offset Voltage (VBS) 650 V —
Typical Sink Current 2.5 A —
Typical Source Current 2.5 A —
Input Logic Non-Inverting —
Integrated Bootstrap Diode Yes —
Technology SOI (Silicon-On-Insulator) high-voltage —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Paket PG-DSO-14-49 (DSO-14) PG-DSO-8-51 (DSO-8, 8-pin, narrow body)
Jumlah Pin 14 —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -40 °C to +125 °C -40 °C to +125 °C
Status RoHS Compliant —
Standard Reel Quantity 3000 —
Driver Configuration — Single high-side, isolated
Isolation Type — Galvanic (coreless transformer), reinforced
Number of Channels — 1
Maximum Supply Voltage (Output Side) — 17 V
Minimum Supply Voltage (Output Side) — 3.1 V
Peak Source Current — 4.0 A (typical)
Peak Sink Current — 3.5 A (typical)
Working Voltage (Isolation) — 1200 V (high-side rail reference)
Propagation Delay — 120 ns (typical)
Konfigurasi Output — Separate source and sink pins
Short-Circuit Clamping — Yes (built-in)
Level MSL — 2 (per JEDEC J-STD-020)
RoHS Compliance — Compliant
Lead-Free — Yes

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